TPD7100

TPD7100F TOSHIBA | Alldatasheet

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TENTATIVE TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT 2ch HIGH-SIDE N-ch POWER MOSFET GATE DRIVER The TPD7100F is a 2ch High-side N-ch Power MOSFET Gate Driver. This IC contains a power MOSFET driver and power MOSFET protective and diagnostic functions, allowing you to configure a high-side switch for large-current applications easily. ow FEATURES _—— oe @ The large-current charge pump allows for fast switching. f et @ Power MOSFET protective and diagnostic functions are built-in. Qo ES Protective functions : Overvoltage NE (internal device protection), overcurrent protection, Vpp voltage drop detection * Overvoltage is internally limited. No detection or 5SOP24-P-300-1.00B shutdown functions are included. i Diagnostic functions: Overcurrent 9 9 (Typ.) @ The level of Overcurrent detection can set by external resistor. @ Package : SSOP-24 (300 mil) with embossed-tape packing Because this product uses MOS structure, must take special care with electrostatic when handling. PIN ASSIGNMENT MARKING (TOP VIEW) Toshiba Trademark o FA vo0s oonoahonoooon cri v ™ - OC) Lot code CP1+ Rref ce2+ [4] Risreft TPD7100F Product no. cev+ [5] Risref2 — DUO UUUUUUUO nc. [6] fis] Ens Vest Diact-2 Lot code naming system Vsenset [8] DiAGt-1 ooog0g fo fa ‘— Toshiba house no. Ves2 DIAG2-2 Manufactured week (52 weeks or 53 vsense2 [10] Diag2-1 weeks indicating system starting from the first Thursday of January) GND int Manufactured year (last two digits of h r) GND 2 the year)

980910 BA2

@ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA. Semiconductor Reliability Handbook § The products described in this document are subject to the foreign exchange and foreign trade laws The information contained herein is presented only as a guide for the applications ‘of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 2000-02-22 1/8

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frwno,| sax [weno id [1 | era [Negative side connecting pin Tor the charge pump's second capacitor | [4 | -cP2+ [Positive side connecting pin for the charge pump’s second capacitor | Positive side connecting pin for the charge pump’s third capacitor. Although CPV + about three times the Vpp voltage is generated, it is limited about 28V by a voltage clamping circuit. a a External power MOSFET gate drive pin for ch1. This pin controls the external 7 Ves1 power MOSFET. Also, when overcurrent flows in the external power MOSFET, it shuts down the gate and is latched. It is unlatched by a low on input. External power MOSFET monitor pin for ch1 : overcurrent is detected by Vsense1 | comparing the difference between this and the Vpp2 pin with the reference voltage. External power MOSFET gate drive pin for ch2. This pin controls the external Ves2 power MOSFET. Also, when overcurrent flows in the external power MOSFET, it shuts down the gate and is latched. It is unlatched by a low on input. External power MOSFET monitor pin for ch2 : overcurrent is detected by Vsense2 | comparing the difference between this and the Vpp2 pin with the reference voltage. [77 [GN [Ground pin = shared intemally with pin 2S so that even when it is open-circuited, output will not turn on inadvertently. Input pin for ch1 (active high) : This pin has a pull-down resistor (100k. typ.), [| me [teen wher ts operated ouput tm on maser | Diagnostic output pin for ch2 (N-ch open-drain) : when overcurrent condition is detected, its output goes low. Also, when overcurrent is detected, it remains latched until the next rising edge of input. Diagnostic output pin for ch2 (N-ch open-drain) : by comparing the voltage

16 DIAG2-2 | between Vpp2 and Vsense2 pins with the set overcurrent level, it outputs

external power MOSFET on/off state. Diagnostic output pin for ch1 (N-ch open-drain) : when overcurrent condition is 17 DIAG1-1 |detected, its output goes low. Also, when overcurrent is detected, it remains latched until the next rising edge of input. Diagnostic output pin for ch1 (N-ch open-drain) : by comparing the voltage DIAG1-2 | between Vpp2 and Vsense1 pins with the set overcurrent level, it outputs external power MOSFET on/off state. Chip inhibit pin (active low) : By driving this pin high, all outputs can be P= ESS typ.). 2000-02-22 3/8

PIN No. | SYMBOL PIN DESCRIPTION Overcurrent detection level setup pin for ch2 : the voltage determined by the constant current set by the resistor connected to the Rref pin and the 20 RiSref2 . ae resistance of an external resistor connected to the RiSref2 pin is referenced to detect overcurrent. Overcurrent detection level setup pin for ch1 : the voltage determined by the constant current set by the resistor connected to the Rref pin and the 21 RiSref1 . ‘ ae resistance of an external resistor connected to the RiSref1 pin is referenced to detect overcurrent. Resistor connection pin ;

22 Rref This resistor determines the constant current used for the overcurrent detection

circuit. Connect 62 kQ. (recommended) between this pin and GND. Vpp2 External power MOSFET drain voltage detection pin.

24 Vpp1 Power supply pin : the internal device is protected when overvoltage is

applied. MAXIMUM RATING (Ta = 25°C) CHARACTERISTICS SYMBOL RATING UNIT Power Supply Voltage Input Voltage Diagnosis Output Current IDIAG [Power Dissipation | Pp | 08 | W_| Operating Temperature | Tow | ~40~170 | °c_| Strage Temperature = 55~150 2000-02-22 48

ELECTRICAL CHARACTERISTICS (Unless otherwise specified : Vpp = 8~18V, Tj = -40~110°C) CHARACTERISTICS RATING | Pin wo. | TEST CONDITION | min. | t¥e. [ Max. | UNIT Operating Supply Voltage Yop i) 18 v input Voltage VN Wop =2V,Ves= "7 | — [= as] Y Cin) —T wi wp Woo=2V. vy = sv] — | — | 200 | Input Current Pinay | N*'S? Wop =12V.vin=0v | -7] — | 1] , p iene Vpp = 12V, Vang = Sv] -45, — | — | “ IENE (2) Vpp = 12V, Veng = Ov] =250| — | —_| Vsense| Vsense Vpp = 12V, Vin=ov | — | — | 04 | Vest fvpp = 12V, Vin=5V, DD = 7 VIN = 1 V@s2 = CP = 0.01 pF Output Current Vpp = 12V, Vin = OV, Overcurrent Detection Risref Risref 20 ka Resistance Setup Range Constant Current Source | preg Rref Rref = 62kQ 1.17] 1.30 v Setup Pin Voltage Rref = 62kQ, Overcurrent Detection Db2 Rref = 62kQ, Voltage Ds (ON) (2) vsenset RiSref = 20kQ. 0.32 0.48 v Rref = 62kQ, 0.80 Ds (ON) (3) Risref = 40 kQ : Diagnostic Output Vpp = 12V, Current 'DH DIAG1 | VDIAG = 5V HA Diagnostic Output DIAG2 _ _ woo=versroa] = [= [| v Power Supply Drop Detection Voltage VDDUV1 ~ Vy 67 73 Power Supply Drop DD Vv Detection Reset Voltage VODUV1 + 72 78 Undervoltage Protection [VDDUV2 po Switching Time ion vest Vpp = 12V, C = 3000 pF K-33 os | * : Vsense denotes the Vsense pin voltage. Equation to calculate overcurrent detection resistance (RISref) RiSref = Rref x Rps (ON) !p/VRref = Rref x Vps (ON)/ VRref where Rps(ON) : ON-resistance of external power MOSFET Ip : drain current of external power MOSFET Vps (ON) : ON-voltage of external power MOSFET Rref : external resistor connected to Rref pin (used to set constant current) VRref : Rref pin voltage 2000-02-22 5/8

H (Note 1) Fi It H (Note 1) or everyone [ (Note 1/Note 2) : , When supply voltage drop detected Undervoltage protection When power MOSFET shorted (Note 1) : Because overcurrent is detected by checking the drain-to-source voltage of the power MOSFET, there is a possibility of detecting overcurrent erratically for a while after input is driven high before the power MOSFET turns on, during which the drain-to-source voltage is high. To prevent this erroneous detection, DIAG detection is disabled for 15 us (typ.) by a mask circuit. This masking time depends on the constant current determined by the internal capacitor and Rref. (The masking time is 15 ~s when Rref = 62k.) (Note 2) : After overcurrent is detected, DIAG remains latched until the next rising edge of input. TIMIMG CHART Input Signal H H i ' i H i ' 1 i i t i t me + t i i i i H 1 i H H H i we i i | H T H T H H H H T T H H Overvoltage i H t 1 1 H i ' ' H H ' H Hl detection H H i i i J i i H i i H H i i 1 1 i 1 i i i H i ! Hl t i ' Overcurrent 1 i ' i i H i t H H i H i i detection H H H i i i i l H i i H i i i

1 H i i i i thot 1 1 H i i t

under 1 H i i i H i 4 trot i H 4 i protection * 7 7 t t t — ——- mort T t Power MOSFET 1 i i i i i thot Hott Hho i t short i i i t ! i ttt thot Hout { Li i Hl Hl H ' H i it iit tout tt i Output signal H i ' — tot H H 1 H H H mt toot Heodh ob tk i t Hi t Hi Hi Hi tt Hl tt oot hott tout t i i i i 1 ‘ trot tit ee t 2000-02-22 6/8

Monitoring Power MOSFET drain-soure voltage 5v +B vec Voo1 Yopz @ owner ves — 4 Nch power MOSFET || a CPU our mee TPD7100F our (19) ENB G2) Rref Risref Qi) GND GND OO ref [| aisref APPLICATION CIRCUIT 2 Monitoring voltage between shunt resistors (for detecting overcurrent with high accuracy) 5V +B 4 4s Shunt resistor Vee : Veo: Voo2 Ed Rshunt rT DIAG1 ves @ Ladd Nch power MOSFET CPU OUT me 'N TPD7100F our Q9) ENB 22) Rref Risref 1) GND GND OO ref [ Risref MOISTURE-PROOF PACKING After the pack is opened, use the devices in a 30°C, 60% RH environment, and within the 48 hours. Embossed-tape packing cannot be baked. Devices so packed must be within their allowable time limits after unpacking, as specified on the packing. Tape packing quantity: 500 devices/reel (EL) or 2000 devices/reel (EL1) 2000-02-22 7/8

SSOP24-P-300-1.00B Unit : mm 24 13 . aq} 9 = | : | Oo o no o| « 2 1 ij 12 ar |) oso aap ESO) 13.5MAX 13.0+0.2 Nx a) Gs 39 bad r = lo} ~8 isd ea r fr) 0.45+0.2 Weight : 0.29g (Typ.) 2000-02-22 8/8