TPD1E05U06 TI | Alldatasheet
Document overview
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Technical content
1 mm x 0.6 mm x 0.35 mm (0.65-mm pitch) DQA 2.5 mm x 1 mm x 0.5 mm (0.5-mm pitch) RVZ 3.5 mm x 1.35 mm x 0.5 mm (0.5-mm pitch) D1+ 1 5 6 D1– GND D2+ D2– N.C. N.C. GND N.C. N.C. NC NC NC NC GND NC NC D1+ D1– D2+ D2– GND D3+ D3– 7 8 TPD1E05U06 TPD4E05U06 TPD6E05U06 www.ti.com SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013 1,4,6CHANNELPROTECTIONSOLUTIONFORSUPER-SPEED(UPTO6GBPS) INTERFACE Check forSamples: TPD1E05U06 ,TPD4E05U06 ,TPD6E05U06 1FEATURES • Easy Straight-throughRouting Packages
- ProvidesSystem LevelESD Protectionfor APPLICATIONSLow- VoltageIO Interface
- HDMI1.4• IEC 61000-4-2Level4
- USB3.0– ±15kV (Airgap discharge)
- MHL– ±12kV (Contactdischarge)
- LVDS Interfaces• IO Capacitance0.42pF(Typ)
- DisplayPort• DC Breakdown Voltage6.5V(Min)
- PCI Express• Ultralow Leakage Current10nA (Max)
- eSata Interfaces• Low ESD Clamping Voltage
- IndustrialTemperature Range: -40°C to125°C
DESCRIPTION
The TPDxE05U06 isa familyofunidirectionalESD protectiondeviceswithultralow capacitance.Thisfamilyof devicesisconstructedwitha centralESD clamp withtwo hidingdiodestoreducethecapacitiveloading.They are ratedtodissipateESD strikesabove themaximum levelspecifiedintheIEC61000-4-2level4 international standard.Itsultralowloadingcapacitancemakes itidealforprotectingany high-speedsignalpins. Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2012–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013 www.ti.com This integratedcircuitcan be damaged by ESD. Texas Instrumentsrecommends thatallintegratedcircuitsbe handled with appropriateprecautions.Failuretoobserveproperhandlingand installationprocedurescan cause damage. ESD damage can rangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmay be more susceptibletodamage because verysmallparametricchanges couldcause thedevicenottomeet itspublishedspecifications.
ORDERING INFORMATION
TOP-SIDETA PACKAGE (1)(2) QUANTITY ORDERABLE PART NUMBER MARKING (3) SON – DPY Tape and reel 10K TPD1E05U06DPYR C1 SON – DPY Tape and reel 250 TPD1E05U06DPYT TBD –40°C to85°C SON – DQA Tape and reel 3000 TPD4E05U06DQAR TBD SON – RVZ Tape and reel 3000 TPD6E05U06RVZR TBD (1) Package drawings,thermaldata,and symbolizationareavailableatwww.ti.com/packaging. (2) Forthemost currentpackage and orderinginformation,see thePackage OptionAddendum attheend ofthisdocument,orsee theTI websiteatwww.ti.com. (3) DQA: The actualtop-sidemarkinghas one additionalcharacterthatdesignateswaferfab/assemblysite. FUNCTIONAL BLOCK DIAGRAM Figure1. SingleChannel Schematic Diagram
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www.ti.com SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013 Figure2. Quad Channel Schematic Diagram Figure3. 6-ChannelSchematic Diagram SINGLE CHANNEL TERMINAL FUNCTIONS TERMINAL TYPE DESCRIPTION USAGE NAME PIN NO. I/O 1 I/O ESD protectedchannel Connectpin1 as closetotheconnectoras possible GND 2 GND Ground Connecttoground Copyright© 2012–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:TPD1E05U06 TPD4E05U06 TPD6E05U06
SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013 www.ti.com QUAD CHANNEL TERMINAL FUNCTIONS TERMINAL TYPE DESCRIPTION USAGE NAME PIN NO. D1+ 1 I/O ESD protectedchannel Connectitas closetotheconnectoras possible D1 – 2 I/O ESD protectedchannel Connectitas closetotheconnectoras possible D2+ 4 I/O ESD protectedchannel Connectitas closetotheconnectoras possible D2 – 5 I/O ESD protectedchannel Connectitas closetotheconnectoras possible Used foroptionalstraight-throughroutingfromD+;NC 6,7,9,10 NC No connect otherwisecan be leftfloatingorgrounded GND 3,8 GND Ground Connecttoground QUAD CHANNEL TERMINAL FUNCTIONS TERMINAL TYPE DESCRIPTION USAGE NAME PIN NO. D1+ 14 I/O ESD protectedchannel Connectitas closetotheconnectoras possible D1 – 13 I/O ESD protectedchannel Connectitas closetotheconnectoras possible D2+ 12 I/O ESD protectedchannel Connectitas closetotheconnectoras possible D2 – 12 I/O ESD protectedchannel Connectitas closetotheconnectoras possible D3+ 9 D3 – 8 1,2,3,4,6, Used foroptionalstraight-throughroutingfromD+;NC NC No connect7 otherwisecan be leftfloatingorgrounded GND 5,10 GND Ground Connecttoground ABSOLUTE MAXIMUM RATINGS (1) overoperatingfree-airtemperaturerange(unlessotherwisenoted) PARAMETER MIN MAX UNIT TA Operatingfree-airtemperaturerange –40 125 °C Tstg Storagetemperaturerange –65 155 °C IEC 61000-4-2ContactDischarge ±12 kV ESD protection IEC 61000-4-2Air-GapDischarge ±15 kV IPP Peak pulsecurrent(tp = 8/20μs) 2.5 A PPP Peak pulsepower (tp = 8/20μs) 40 W (1) Stressesbeyond thoselistedunder"absolutemaximum ratings"may cause permanentdamage tothedevice.These arestressratings only,and functionaloperationofthedeviceattheseorany otherconditionsbeyond thoseindicatedintheoperationalsectionsofthe specificationsisnotimplied.Exposuretoabsolutemaximum-ratedconditionsforextendedperiodsmay affectdevicereliability.
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www.ti.com SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013
ELECTRICAL CHARACTERISTICS
overoperatingfree-airtemperaturerange(unlessotherwisenoted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reversestand-offvoltage IIO = 10 µA 5.5 V IPP = 1 A,tp = 8/20μs,fromI/Otoground(1) 10.4 IPP = 2.5A,tp = 8/20μs,fromI/Otoground(1) 13.4 Vclamp Clamp voltage V IPP = 1A,tp = 8/20μs,fromgroundtoI/O(1) 3.3 IPP = 3A,tp = 8/20μs,fromgroundtoI/O(1) 7.6 Pinx toGND Pin(2) 0.65DPY package dynamic Ωresistance GND PintoPinx (2) 0.8 Pinx toGND Pin(2) TBDDQA package dynamicR DYN Ωresistance GND PintoPinx (2) TBD Pinx toGND Pin(2) TBDRVZ package dynamic Ωresistance GND PintoPinx (2) TBD C L Linecapacitance(3) VIO = 2.5V,F = 1 MHz, I/OtoGND 0.42 0.5 pF Channeltochannelinput GND Pin= 0 V,F = 1 GHz, VBIAS = 2.5V,betweenC CROSS 0.1 0.15 pFcapacitance channelpins ΔC IO-TO- Variationofchannelinput GND Pin= 0 V,F = 1 GHz, VBIAS = 2.5V, 0.05 0.07 pF GND capacitance channel_xpintognd – channel_ypintognd VBR Break-downvoltage IIO = 1 mA 6.5 8.5 V ILEAK Leakage current VIO = 2.5V 1 10 nA (1) Non-repetitivecurrentpulse8/20usexponentiallydecayingwaveform accordingtoIEC61000-4-5. (2) ExtractionofRDYIN usingleastsquaresfitofTLP characteristicsbetween I= 10 A and I= 20 A. (3) Capacitancedataistakenat25°C. Copyright© 2012–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:TPD1E05U06 TPD4E05U06 TPD6E05U06
±10 0 25 50 75 100 125 150 175 200 Voltage (V) Time (ns) C005 ±90 ±80 ±70 ±60 ±50 ±40 ±30 ±20 ±10 0 25 50 75 100 125 150 175 200 Voltage (V) Time (ns) C006 ±10 ±15 ±10 ±5 0 5 10 15 20 25 30 Current (A) Voltage (V) C003 100 150 200 250 300 ±40 ±20 0 20 40 60 80 100 120 Current (pA) Temperature (C) C004 ±1.0 ±0.8 ±0.6 ±0.4 ±0.2 0.0 0.2 0.4 0.6 0.8 1.0 ±2 ±1 0 1 2 3 4 5 6 7 8 9 10 Current (mA) Voltage (V) C001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ±5 0 5 10 15 20 25 30 35 40 45 50 Power (W) Current (A) Time ( Current Power C002 TPD1E05U06 TPD4E05U06 TPD6E05U06 SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013 www.ti.com TYPICAL CHARACTERISTICS CURRENT CURRENT and POWER vs vs VOLTAGE TIME Figure4.DC VoltageSweep I-VCurve Figure5.Surge Curve (tp= 8/20μs),Pin IO toGND CURRENT CURRENT vs vs VOLTAGE TEMPERATURE Figure6.TLP PlotIO toGND Figure7.Leakage vs Temp VOLTAGE VOLTAGE vs vs TIME TIME Figure8.+8kV IEC Waveform Figure9.–8kV IEC Waveform
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±12 ±11 ±10 100k 1M 10M 100M 1000M 10000M Insertion Loss (dB) Frequency (Hz) C007 1G 10G TPD1E05U06 TPD4E05U06 TPD6E05U06 www.ti.com SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013 TYPICAL CHARACTERISTICS (continued) INSERTION LOSS vs FREQUENCY Figure10.TPD1E05U06 InsertionLoss Copyright© 2012–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:TPD1E05U06 TPD4E05U06 TPD6E05U06
SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) Figure11. TPD1E05U06 Eye Diagrams
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www.ti.com SLVSBO7B –DECEMBER 2012–REVISED JANUARY 2013
REVISION HISTORY
Changes from Original(December 2012)toRevisionA Page Changes from RevisionA (December 2012)toRevisionB Page Copyright© 2012–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:TPD1E05U06 TPD4E05U06 TPD6E05U06
www.ti.com 24-Jan-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples TPD1E05U06DPYR ACTIVE X2SON DPY 2 10000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C1 TPD1E05U06DPYT ACTIVE X2SON DPY 2 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C1 TPD4E05U06DQAR PREVIEW SON DQA 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 TPD6E05U06RVZR PREVIEW UQFN RVZ 14 3000 TBD Call TI Call TI -40 to 85 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Only one of markings shown within the brackets will appear on the physical device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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