TPD4204F TOSHIBA | Alldatasheet
Document overview
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Technical content
Features
- High voltage power side and low voltage signal side terminal are separated.
- It is the best for current sensing in three shunt resistance.
- Bootstrap circuit gives simple high-side supply.
- Bootstrap diodes are built in.
- A dead time can be set as a minimum of 1.4 μs, and it is suitable for a Sine-wave drive.
- 3-phase bridge output using MOSFETs.
- Included over-current and under-voltage protection and shutdown, and thermal shutdown.
- The regulator of 7 V (typ.) is built in.
- The package is a surface mount type 30 pin package. This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge. The TSD and UVLO circuits are only intended to provide tempor ary protection against irregular condition such as an output short-circuit; they do not necessarily guarantee the complete IC safety. If the device is used beyond the specified operating ranges, these circuits may not operate properly ; then the device may be damaged. Such a condition must be removed immediately by external hardware. Start of commercial production 2017-01 P-SSOP30-1120-1.00-001 Weight: 1.2 g (typ.)
U V W High-side Level Shift Driver LW RS 9 Under- Voltage Protection Under- Voltage Protection Under- Voltage Protection Under- Voltage Protection 7 V Regulator
20 IS3
Pin No. Symbol Pin Description 1 NC Unused pin, which is not connected to the chip internally. 2 NC Unused pin, which is not connected to the chip internally. 3 NC Unused pin, which is not connected to the chip internally. 4 DIAG With the diagnostic output terminal of open drain, a pull-up is carried out by resistance. It turns on at the time of unusual. 5 VCC Control power supply pin. (15 V (typ.)) 6 VREG 7 V regulator output pin. 7 SD Input pin of external protection. (“L” active, It doesn't have hysteresis.) 8 GND Ground pin. 9 RS Over current detection pin. 10 LW The control terminal of MOSFET by the low side of W. It turns off less than 1.5 V. It turns on more than 2.5 V. 11 LV The control terminal of MOSFET by the low side of V. It turns off less than 1.5 V. It turns on more than 2.5 V. 12 LU The control terminal of MOSFET by the low side of U. It turns off less than 1.5 V. It turns on more than 2.5 V. 13 HW The control terminal of MOSFET by the high side of W. It turns off less than 1.5 V. It turns on more than 2.5 V. 14 HV The control terminal of MOSFET by the high side of V. It turns off less than 1.5 V. It turns on more than 2.5 V. 15 HU The control terminal of MOSFET by the high side of U. It turns off less than 1.5 V. It turns on more than 2.5 V. 16 GND Ground pin. 17 NC Unused pin, which is not connected to the chip internally. 18 NC Unused pin, which is not connected to the chip internally. 19 NC Unused pin, which is not connected to the chip internally. 20 IS3 The source terminal of MOSFET by the low side of W. 21 W W- phase output pin. 22 BSW W- phase bootstrap capacitor connecting pin. 23 VBB High-voltage power supply input pin. 24 VBB High-voltage power supply input pin. 25 BSV V- phase bootstrap capacitor connecting pin. 26 V V- phase output pin. 27 IS2 The source terminal of MOSFET by the low side of V. 28 IS1 The source terminal of MOSFET by the low side of U. 29 BSU U- phase bootstrap capacitor connecting pin. 30 U U- phase output pin.
Equivalent Circuit of Input Pins Internal circuit diagram of HU, HV, HW, LU, LV, LW input pins Internal circuit diagram of SD pin Internal circuit diagram of RS pin Internal circuit diagram of DIAG pin 250 kΩ To internal circuit DIAG 26 V To internal circuit RS 4 kΩ 200 kΩ 19.5 V VREG 5 pF 200 kΩ VCC 2 kΩ 2 kΩ To internal circuit 6.5 V 6.5 V 6.5 V 6.5 V 2 kΩ 200 kΩ VREG 2 kΩ HU/HV/HW LU/LV/LW 2 kΩ 2 kΩ To internal circuit 6.5 V 6.5 V 6.5 V 6.5 V 200kΩ SD
X: Don’t care Note: The output of the input logic is OFF if the high side input and low side input are ON at the same time Input High side Low side DIAG Mode HU HV HW LU LV LW SD U phase V phase W phase U phase V phase W phase Normal H L L L H L H ON OFF OFF OFF ON OFF OFF H L L L L H H ON OFF OFF OFF OFF ON OFF L H L L L H H OFF ON OFF OFF OFF ON OFF L H L H L L H OFF ON OFF ON OFF OFF OFF L L H H L L H OFF OFF ON ON OFF OFF OFF L L H L H L H OFF OFF ON OFF ON OFF OFF Over-current H L L L H L H OFF OFF OFF OFF OFF OFF ON H L L L L H H OFF OFF OFF OFF OFF OFF ON L H L L L H H OFF OFF OFF OFF OFF OFF ON L H L H L L H OFF OFF OFF OFF OFF OFF ON L L H H L L H OFF OFF OFF OFF OFF OFF ON L L H L H L H OFF OFF OFF OFF OFF OFF ON Thermal shutdown H L L L H L H OFF OFF OFF OFF OFF OFF ON H L L L L H H OFF OFF OFF OFF OFF OFF ON L H L L L H H OFF OFF OFF OFF OFF OFF ON L H L H L L H OFF OFF OFF OFF OFF OFF ON L L H H L L H OFF OFF OFF OFF OFF OFF ON L L H L H L H OFF OFF OFF OFF OFF OFF ON VCC Under-voltage H L L L H L H OFF OFF OFF OFF OFF OFF ON H L L L L H H OFF OFF OFF OFF OFF OFF ON L H L L L H H OFF OFF OFF OFF OFF OFF ON L H L H L L H OFF OFF OFF OFF OFF OFF ON L L H H L L H OFF OFF OFF OFF OFF OFF ON L L H L H L H OFF OFF OFF OFF OFF OFF ON VBS Under-voltage H L L L H L H OFF OFF OFF OFF ON OFF OFF H L L L L H H OFF OFF OFF OFF OFF ON OFF L H L L L H H OFF OFF OFF OFF OFF ON OFF L H L H L L H OFF OFF OFF ON OFF OFF OFF L L H H L L H OFF OFF OFF ON OFF OFF OFF L L H L H L H OFF OFF OFF OFF ON OFF OFF Irregular (Note) H L L H L L H OFF OFF OFF OFF OFF OFF OFF L H L L H L H OFF OFF OFF OFF OFF OFF OFF L L H L L H H OFF OFF OFF OFF OFF OFF OFF SD X X X X X X L OFF OFF OFF OFF OFF OFF ON
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VBB 600 V VCC 18 V Output current (DC) Iout 2 .5 A Output current (pulse 100 μs) I outp 3 .75 A Input voltage VIN - 0.5 to 7 V VREG current IREG 50 mA DIAG voltage VDIAG 20 V DIAG current IDIAG 20 mA Power dissipation (All phase (Tc = 25°C) ) PC 3 W Thermal Resistance (J unction to Case) (Note 1) Rj-c 15 °C/W Operating Case temperature T copr -4 0 to 100 °C Junction temperature Tj 150 °C Storage temperature Tstg - 55 to 150 °C Note 1: Mounted on two layers of JEDEC standard PCB, 76.2 mm × 114.3 mm × 1.6 mm, in still air. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Operating power supply voltage VBB ― 50 280 450 V VCC ― 13.5 15 16.5 Current dissipation IBB V BB = 450 V ― ― 0.5 mA ICC V CC = 15 V ― 0.8 5 Bootstrap Current dissipation IBS (ON) V BS = 15 V, high side ON ― 220 410 μA IBS (OFF) V BS = 15 V, high side OFF ― 190 370 Input voltage VIH V IN = “H”, VCC = 15 V 2.5 ― ― V VIL V IN = “L” , VCC = 15 V ― ― 1.5 Input current IIH V IN = 5 V ― ― 150 μA IIL V IN = 0 V ― ― 100 SD Input voltage VSD V CC = 15 V ― 2.5 ― V SD Input current ISDH V IN = 5 V ― ― 100 μA ISDL V IN = 0 V ― ― 150 MOSFET Leakage Current IDSS V BB = 600 V ― ― 100 μA MOSFET On State Resistance RDSONH V CC = 15 V, IC = 1.25 A, high side 2.6 3.2 Ω RDSONL V CC = 15 V, IC = 1.25 A, low side 2.6 3.2 Diode forward voltage (MOSFET) VFH I F = 1.25 A, high side 1.1 1.5 V VFL I F = 1.25 A, low side 1.1 1.5 BSD forward voltage VF (BSD) IF = 500 µA 0.9 1.2 V Regulator voltage VREG V CC = 15 V, IREG = 30 mA 6.5 7 7.5 V Current limiting voltage VR ― 0.46 0.5 0.54 V Current limiting delay time Dt ― 1.5 3.8 5 μs Thermal shutdown temperature TSD V CC = 15 V 135 ― 185 °C Thermal shutdown hysteresis ∆TSD V CC = 15 V ― 50 ― °C VCC under voltage protection VCCUVD ― 10 11 12 V VCC under voltage protection recovery V CCUVR ― 10.5 11.5 12.5 V VBS under voltage protection VBSUVD ― 9 10 11 V VBS under voltage protection recovery V BSUVR ― 9.5 10.5 11.5 V DIAG saturation voltage VDIAGsat I DIAG = 5 mA ― ― 0.5 V Output on delay time ton V BB = 280 V, VCC = 15 V, IC = 1.25 A ― 0.6 1.8 μs Output off delay time toff V BB = 280 V, VCC = 15 V, IC = 1.25 A ― 0.4 2.4 μs Dead time tdead V BB = 280 V, VCC = 15 V, IC = 1.25 A 1.4 ― ― μs Diode reverse recovery time (MOSFET) t rr V BB = 280 V, VCC = 15 V, IC = 1.25 A ― 100 ― ns
Application Circuit Exampl e1: (O perate an overcurrent protection functi on with a control IC or a microcomputer.) Low-side Driver VCC VREG IS2 GND BSU VBB BSW U V W High-side Level Shift Driver HU HV HW LU LV LW 10 DIAG 4 7 V Regulator C4 + C5 Control IC or Microcomputer M C1 C2 C3 C6 + C7
28 IS1
R C R R BSV RS 9 Over current Input Logic 23/24 Under- Voltage Protection Under- Voltage Protection Under- Voltage Protection Under- Voltage Protection Thermal Shutdown 15 V
Application Circuit Example 2: (Operate an overcurrent protection function with this product.) VCC VREG IS2 GND BSU VBB BSW U V W High-side Level Shift Driver HU HV HW LU LV LW 10 DIAG 4 7 V Regulator C4 + C5 Control IC or Microcomputer M C1 C2 C3 C6 + C7 C 15 V Under- Voltage Protection Under- Voltage Protection Under- Voltage Protection Thermal Shutdown BSV RS 9 Over current Input Logic Under- Voltage Protection Low-side Driver
Typical external parts are shown in the following table. Part Typical Purpose Remarks C1, C2, C3 25 V/2.2 µF Bootstrap capacitor (Note 1) C4 25 V/10 µF VCC power supply stability (Note 2) C5 25 V/0.1 µF VCC for surge absorber (Note 2) C6 25 V/1 µF VREG power supply stability (Note 2) C7 25 V/1000 pF VREG for surge absorber (Note 2) R1 5.1 kΩ DIAG pull-up resistor (Note 3) R2 10 kΩ SD pull-up resistor - R3 0.35 Ω ± 1 % (1 W) Current detection (Note 4) Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. The capacitor is biased by VCC and must be sufficiently derated for it. Note 2: When using this product, adjustment is required in accordance with the use environment. When mounting, place as close to the base of this product leads as possible to improve the ripple and noise elimination. Note 3: The DIAG pin is open drain. If not using the DIAG pin, connect to the GND. Note 4: The following formula shows the detection current: I O = VR ÷ R3 (For VR = 0.5 V (typ.)) Handling precautions (1) Please control the input signal in the state to which the V CC voltage is steady. Both of the order of the V BB power supply and the VCC power supply are not cared about either. Note that if the power supply is switched off as described above, this product may be destroyed if the current regeneration route to the V BB power supply is blocked when the VBB line is disconnected by a relay or similar while the motor is still running. (2) The RS pin connecting the current detection resistor is connected to a comparator in the IC and also functions as a sensor pin for detecting over current. As a result, over voltage caused by a surge voltage, for example, may destroy the circuit. Accordingly, be careful of handling the IC or of surge voltage in its application environment.
Description of Protection Function (1) Under voltage protection This product incorporates under voltage protection circuits to prevent the MOSFET from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the V CC power supply falls to this product internal setting V CCUVD ( = 11 V (typ.) ), all MOSFET outputs shut down regardless of the input. This protection function has hysteresis. When the V CC power supply reaches 0.5 V higher than the shutdown voltage (V CCUVR (= 11.5 V (typ.))), this product is automatically restored and the MOSFET is turned on again by the input. DIAG output is reversed at the time of V CC under-voltage protection. When the VCC power supply is less than 7 V, DIAG output isn't sometimes reversed. When the V BS supply voltage drops V BSUVD (= 10 V (typ.)), the high-side MOSFET output shuts down. When the V BS supply voltage reaches 0.5 V higher than the shutdown voltage (V BSUVR ( = 10.5 V (typ.) )), the M OSFET is turned on again by the input signal. (2) Over-current protection This product incorporates an over-current protection circuit to protect itself against over -current at startup or when a motor is locked. This protection function detects voltage generat ed in the current detection resistor connected to the RS pin. When this voltage exceeds V R (= 0.5 V (typ.)), the MOSFET output, which is on, temporarily shuts down after a d elay time, preventing any additional current from flowing to this product. The next all “L” signal releases the shutdown state. (3) Thermal shutdown This product incorporates a thermal shutdown circuit to protect itself against the abnormal state when its temperature rises excessively. When the temperature of this chip rises to the inter nal setting TSD due to external causes or internal heat generation, all MOSFET outputs shut down regardless of the input. This protection function has hysteresis ∆TSD (= 50 °C (typ.) ). When the chip temperature falls to TSD - ∆TSD, the chip is automatically restored and the MOSFET is turned on again by the input. Because the chip contains just one temperature detection location, when the chip heats up due to the MOSFET, for example, the differences in distance from the detection location in the MOSFET (the source of the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the thermal shutdown temperature when the circuit started to operate. (4) SD function SD pin is the input signal pi n to shut down the internal output MOSFET. Output of all MOSFET is shut down after delay times ( 2 μs (typ.)) when "L" signal is input to the SD pin from external circuit (MCU etc.). It is possible to shut down IC when overcurrent and others is detected by external circuit. Shut down state is released by all of IC input signal "L". At open state of SD pin, shut down function can not operate. Timing Chart of Under voltage protection Note: The above timing chart is considering the delay time LIN HO HIN VBS VCC LO DIAG ton toff ton toff
Unit: mm P-SSOP30-1120-1.00-001 Package Name(s) TOSHIBA:P-SSOP30-1120-1.00-001 Nickname:SSOP30
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