TPD4123K

TPD4123K TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

• High voltage power side and low voltage signal side terminal are separated.
• It is the best for current sensing in three shunt resistance.
• Bootstrap circuit gives simple high-side supply.
• Bootstrap diodes are built in.
• A dead time can be set as a minimum of 1.4 μs, and it is the best for a Sine-wave from drive.
• 3-phase bridge output using IGBTs.
• FRDs are built in.
• Included over-current and under-voltage protection, and thermal shutdown.
• The regulator of 7V (typ.) is built in.
• Package: 26-pin DIP . This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge. HDIP26-P-1332-2.00 Weight : 3.8 g (typ.)

Lot Code. (Weekly code) Part No. (or abbreviation code) TPD4123K 16 17 GND NC NC HU HV HW LU LV RS LW DIAG NC V REG NC VCC GND U BSU IS1 IS2 BSV V VBB BSW W IS3 16 17 16 17 GND NC NC HU HV HW LU LV RS LW DIAG NC V REG NC VCC GND U BSU IS1 IS2 BSV V VBB BSW W IS3

U V W High-side Level Shift Driver RS10 Under- voltage Protection 7 V Regulator

26 IS3

Pin No. Symbol Pin Description 1 GND Ground pin. 2 NC Unused pin, which is not connected to the chip internally. 3 NC Unused pin, which is not connected to the chip internally. 4 HU The control terminal of IGBT by the high side of U. It turns off less than 1.5V. It turns on more than 2.5V. 5 HV The control terminal of IGBT by the high side of V. It turns off less than 1.5V. It turns on more than 2.5V. 6 HW The control terminal of IGBT by the high side of W. It turns off less than 1.5V. It turns on more than 2.5V. 7 LU The control terminal of IGBT by the low side of U. It turns off less than 1.5V. It turns on more than 2.5V. 8 LV The control terminal of IGBT by the low side of V. It turns off less than 1.5V. It turns on more than 2.5V. 9 LW The control terminal of IGBT by the low side of W. It turns off less than 1.5V. It turns on more than 2.5V. 10 RS Over current detection pin. 11 DIAG With the diagnostic output terminal of open drain , a pull-up is carried out by resistance. It turns on at the time of unusual. 12 NC Unused pin, which is not connected to the chip internally. 13 V REG 7V regulator output pin. 14 NC Unused pin, which is not connected to the chip internally. 1 5 V CC Control power supply pin. (15V typ.) 16 GND Ground pin. 17 U U-phase output pin. 18 BSU U-phase bootstrap c apacitor connecting pin. 19 IS1 U-phase IGBT emitter and FRD anode pin. 20 IS2 V-phase IGBT emitter and FRD anode pin. 21 BSV V-phase bootstrap capacitor connecting pin. 22 V V-phase output pin. 23 V BB High-voltage power supply input pin. 24 BSW W-phase bootstrap capacitor connecting pin. 25 W W-phase output pin. 26 IS3 W-phase IGBT emitter and FRD anode pin.

Equivalent Circuit of Input Pins Internal circuit diagram of HU, HV, HW, LU, LV, LW input pins Internal circuit diagram of RS pin Internal circuit diagram of DIAG pin HU/HV/HW LU/LV/LW 2 kΩ 2 kΩ To internal circuit 6.5 V 6.5 V 6.5 V 6.5 V 2 kΩ 200 kΩ DIAG To internal circuit 26 V RS 4 kΩ 5 pF 19.5 V To internal circuit 442 kΩ VCC

Mode HU HV HW LU LV LW U phase V phas e W phase U phase V phase W phase DIAG Normal H L L L H L ON OFF OFF OFF ON OFF OFF H L L L L H ON OFF OFF OFF OFF ON OFF L H L L L H OFF ON OFF OFF OFF ON OFF L H L H L L OFF ON OFF ON OFF OFF OFF L L H H L L OFF OFF ON ON OFF OFF OFF L L H L H L OFF OFF ON OFF ON OFF OFF Over-current H L L L H L OFF OFF OFF OFF OFF OFF ON H L L L L H OFF OFF OFF OFF OFF OFF ON L H L L L H OFF OFF OFF OFF OFF OFF ON L H L H L L OFF OFF OFF OFF OFF OFF ON L L H H L L OFF OFF OFF OFF OFF OFF ON L L H L H L OFF OFF OFF OFF OFF OFF ON Thermal shutdown H L L L H L OFF OFF OFF OFF OFF OFF ON H L L L L H OFF OFF OFF OFF OFF OFF ON L H L L L H OFF OFF OFF OFF OFF OFF ON L H L H L L OFF OFF OFF OFF OFF OFF ON L L H H L L OFF OFF OFF OFF OFF OFF ON L L H L H L OFF OFF OFF OFF OFF OFF ON VCC Under-voltage H L L L H L OFF OFF OFF OFF OFF OFF ON H L L L L H OFF OFF OFF OFF OFF OFF ON L H L L L H OFF OFF OFF OFF OFF OFF ON L H L H L L OFF OFF OFF OFF OFF OFF ON L L H H L L OFF OFF OFF OFF OFF OFF ON L L H L H L OFF OFF OFF OFF OFF OFF ON H L L L H L OFF OFF OFF OFF ON OFF OFF H L L L L H OFF OFF OFF OFF OFF ON OFF L H L L L H OFF OFF OFF OFF OFF ON OFF L H L H L L OFF OFF OFF ON OFF OFF OFF L L H H L L OFF OFF OFF ON OFF OFF OFF VBS Under-voltage L L H L H L OFF OFF OFF OFF ON OFF OFF

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VBB 500 V Power supply voltage VCC 18 V Output current (DC) IOUT 1 A Output current (pulse) IOUTp 2 A Input voltage VIN -0.5 to 7 V VREG current I REG 50 mA Power dissipation (Tc = 25°C) P C 23 W Operating temperature Tjopr -40 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. t he application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VBB ⎯ 50 280 450 Operating power supply voltage VCC ⎯ 13.5 15 16.5 V IBB V BB = 450 V ⎯ ⎯ 0.5 ICC V CC = 15 V ⎯ 0.9 5 mA IBS (ON) V BS = 15 V, high side ON ⎯ 230 410 Current dissipation IBS (OFF) V BS = 15 V, high side OFF ⎯ 200 370 μA VIH V IN = “H”, VCC = 15 V 2.5 ⎯ ⎯ Input voltage VIL V IN = “L” , VCC = 15 V ⎯ ⎯ 1.5 V IIH V IN = 5 V ⎯ ⎯ 150 Input current IIL V IN = 0 V ⎯ ⎯ 100 μA VCEsatH V CC = 15 V, IC = 0.5 A, high side ⎯ 2.4 3 Output saturation voltage VCEsatL V CC = 15 V, IC = 0.5 A, low side ⎯ 2.4 3 V VFH I F = 0.5 A, high side ⎯ 1.5 2.0 FRD forward voltage VFL I F = 0.5 A, low side ⎯ 1.5 2.0 V BSD forward voltage VF (BSD) IF = 500 μA ⎯ 0.9 1.2 V Regulator voltage VREG V CC = 15 V, IO = 30 mA 6.5 7 7.5 V Current limiting voltage VR ⎯ 0.46 0.5 0.54 V Current limiting dead time Dt ⎯ 2.3 3.3 4.4 μs Thermal shutdown temperature TSD V CC = 15 V 135 ⎯ 185 °C Thermal shutdown hysteresis ΔTSD V CC = 15 V ⎯ 50 ⎯ °C VCC under voltage protection VCCUVD ⎯ 10 11 12 V VCC under voltage protection recovery V CCUVR ⎯ 10.5 11.5 12.5 V VBS under voltage protection VBSUVD ⎯ 8 9 9.5 V VBS under voltage protection recovery V BSUVR ⎯ 8.5 9.5 10.5 V DIAG saturation voltage VDIAGsat I DIAG = 5 mA ⎯ ⎯ 0.5 V Output on delay time ton V BB = 280 V, VCC = 15 V, IC = 0.5 A ⎯ 1.4 3 μs Output off delay time toff V BB = 280 V, VCC = 15 V, IC = 0.5 A ⎯ 1.0 3 μs Dead time tdead V BB = 280 V, VCC = 15 V, IC = 0.5 A 1.4 ⎯ ⎯ μs FRD reverse recovery time trr V BB = 280 V, VCC = 15 V, IC = 0.5 A ⎯ 200 ⎯ ns

Application Circuit Example Low-side Driver VCC VREG IS2 GND Input Control Thermal Shutdown BSV BSU VBB BSW U V W HU HV HW LU LV LW 9 DIAG 11 Under- voltage Protection 7 V Regulator C4 + C5 Control IC or Microcomputer M C1 C2 C3 C6 + C7

19 IS1

C 15V

Typical external parts are shown in the following table. Part Typical Purpose Remarks C1, C2, C3 25 V/2.2 μF Bootstrap capacitor (Note 1) R1 0.62 Ω ± 1 % (1 W) Current detection (Note 2) C4 25 V/10 μF VCC power supply stability (Note 3) C5 25 V /0.1 μF V CC for surge absorber (Note 3) C6 25 V/1 μF V REG power supply stability (Note 3) C7 25 V/1000 pF VREG for surge absorber (Note 3) R2 5.1 kΩ DIAG pull-up resistor (Note 4) Note 1: The required bootstrap capacit ance value varies according to the moto r drive conditions. The capacitor is biased by VCC and must be sufficiently derated for it. Note 2: The following formula shows the detection current: I O = VR ÷ R1 (For VR = 0.5 V) Do not exceed a detection current of 1 A when using this product. (Please go from the outside in the over current protection.) Note 3: When using this product, adjustment is required in accordance with the use environment. When mounting, place as close to the base of this product leads as possible to improve the ripple and noise elimination. Note 4: The DIAG pin is open drain. If not using the DIAG pin, connect to the GND. Handling precautions （１） Please control the input signal in the state to which the V CC voltage is steady. Both of the order of the VBB power supply and the VCC power supply are not cared about either. Note that if the power supply is switched off as described above, this product may be destroyed if the current regeneration route to the V BB power supply is blocked when the V BB line is disconnected by a relay or similar while the motor is still running. （２） The RS pin connecting the current detection resistor is connected to a comparator in the IC and also functions as a sensor pin for detecting over current. As a result, over voltage caused by a surge voltage, for example, may destroy the circuit. Accord ingly, be careful of handling the IC or of surge voltage in its application environment.

Description of Protection Function (1) Over-current protection This product incorporates a over-current protection circuit to protec t itself against over-current at startup or when a motor is locked . This protection function detect s voltage generated in the current detection resistor connected to the RS pin. When this voltage exceeds V R ( =0.5 V typ.), the IGBT output, which is on, temporarily shuts down after a dead time , preventing any additional current from flowing to this product. The next all “L” signal releases the shutdown state. (2) Under voltage protection This product incorporates under vo ltage protection circuit s to prevent the IGBT from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the V CC power supply falls to this product internal setting V CCUVD ( =11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the V CC power supply reaches 0.5 V higher than the shutdown voltage (VCCUVR (=11.5 V typ.)), this product is automatically restored and the IGBT is turned on again by the input. DIAG output is reversed at the time of VCC under-voltage protection. When the V CC power supply is less than 7 V, DIAG output isn't sometimes reversed. When the VBS supply voltage drops VBSUVD (=9 V typ.), the high-side IGBT output shuts down. When the VBS supply voltage reaches 0.5 V higher than the shutdown voltage (VBSUVR (=9.5 V typ.)), the IGBT is turned on again by the input signal. (3) Thermal shutdown This product incorporates a thermal shutdown circ uit to protect itself against the abnormal state when its temperature rises excessively. When the temperature of this chip rises to the internal setting TSD du e to external causes or internal heat generation , all IGBT outputs shut down rega rdless of the input. This protection function has hysteresis ΔTSD ( =50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is automatically restored and the IGBT is turned on again by the input. Because the chip contains just one temperature dete ction location, when the ch ip heats up due to the IGBT, for example, the differences in distance from the detection locati on in the IGBT (the source of the heat) cause differences in the ti me taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the thermal shutdown temperature when the circuit started to operate. Timing Chart of Under voltage protection Note: The above timing chart is considering the delay time Safe Operating Area Note 1: The above safe operating areas are Tj = 135 °C (Figure 1). LIN HO HIN VBS VCC LO DIAG ton toff ton toff Peak winding current (A) Power supply voltage VBB (V) Figure 1 SOA at Tj = 135 °C 0 450 1.0

Current dissipation I CC ( m A ) VCEsatH – Tj IGBT saturation voltage V CEsatH (V) VCEsatL – Tj FRD forward voltage V FH (V) FRD forward voltage V FL (V) Junction temperature T j ( ° C ) Junction temperature T j ( ° C ) IGBT saturation voltage V CEsatL (V) Junction temperature T j ( ° C ) VFH – Tj Junction temperature T j ( ° C ) VFL – Tj Control power supply voltage V CC ( V ) ICC – VCC Control power supply voltage V CC (V) VREG – VCC Regulator voltage V REG ( V ) 1.4 −50 3.4 3.0 2.6 2.2 1.8 0 50 100 150 IC = 700 mA IC = 500 mA IC = 300 mA VCC = 15 V 1.0 −50 0 50 100 150 1.2 1.4 1.6 1.8 IF = 700 mA IF = 500 mA IF = 300 mA 150 1.0 −50 0 50 100 1.2 1.4 1.6 1.8 2.0 0.5 1.0 1.5 14 16 18 18 6.0 6.5 7.0 7.5 14 16 8.0 150 IC = 700 mA IC = 500 mA IC = 300 mA −50 3.4 3.0 2.6 2.2 1.8 0 50 100 VCC = 15 V 1.4 IF = 700 mA IF = 500 mA IF = 300 mA T j =−40°C T j =25°C T j =135°C T j =−40°C T j =25°C T j =135°C I REG = 30 mA

Under-voltage protection operating voltage V CCUV (V) Junction temperature T j ( ° C ) ton – Tj Output-on delay time ton ( μs) Junction temperature T j ( ° C ) toff – Tj Output-off delay time toff ( μs) Junction temperature T j ( ° C ) VCCUV – Tj Junction temperature T j ( ° C ) VBSUV – Tj Junction temperature T j ( ° C ) VR – Tj Current control operating voltage V R (V) −50 0 50 100 150 3.0 1.0 2.0 VBB = 280 V VCC = 15 V IC = 0.5 A High-side Low-side 3.0 1.0 2.0 −50 0 50 100 150 VBB = 280 V VCC = 15 V IC = 0.5 A High-side Low-side −50 0 50 100 150 12.5 10.0 12.0 10.5 11.5 11.0 0 50 100 150 10.5 8.0 10.0 8.5 9.5 9.0 V BSUVD V BSUVR −50 0 50 100 150 1.0 0.8 0.2 0.6 0.4 VCC = 15 V Under-voltage protection operating voltage V BSUV (V) Junction temperature T j ( ° C ) Dt – Tj Current limiting dead time Dt (μ s) s −50 0 50 100 150 6.0 2.0 4.0 VCC = 15 V −50 V CCUVD V CCUVR

IBS (OFF) – VBS Control power supply voltage V BS ( V ) IBS (ON) – VBS Current dissipation I BS (ON) ( μA) Control power supply voltage V BS ( V ) Current dissipation I BS (OFF) ( μA) 100 500 200 300 400 14 16 18 18 100 200 300 400 14 16 500 Turn-on loss Wton ( μJ) Junction temperature T j ( ° C ) Wton – Tj −50 250 200 150 100 0 50 100 150 IC = 700 mA IC = 500 mA IC = 300 mA Junction temperature T j ( ° C ) Turn-off loss Wtoff ( μJ) Wtoff – Tj −50 0 50 100 150 IC = 300 mA IC = 500 mA IC = 700 mA T j =−40°C T j =25°C T j =135°C T j =−40°C T j =25°C T j =135°C

IGBT Saturation Voltage (U-phase low side) FRD Forward Voltage (U-phase low side) 0.5A ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 VM LW = 0V VCC = 15V ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 HW = 0V LU = 5V 0.5A VM LV = 0V HV = 0V HU = 0V

VCC = 15V 30mA ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 IM VCC = 15V ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3

Output ON/OFF Delay Time (U-phase low side) IM U = 280V 560Ω 2.2μF LU = PG IM ton t off 10% 10% 90% 90% LW = 0V VCC = 15V HW = 0V LU = PG LV = 0V HV = 0V HU = 0V ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3

VCC Under-voltage Protection Operating/Recovery Voltage (U-phase low side) *Note: Sweeps the V CC pin voltage from 15 V and monitors the U pin voltage. The V CC pin voltage when output is off defines the under- voltage protection operating volt age. Also sweeps from 6 V to increase. The V CC pin voltage when output is on defines the under voltage protection recovery voltage. VBS Under-voltage Protection Operating/Recovery Voltage (U-phase high side) *Note: Sweeps the BSU pin voltage from 15 V to decrease and monitors the V BB pin voltage. The BSU pin voltage when output is off defines the under voltage protection operating voltage. Also sweeps the BSU pin voltage from 6V to increase and change the HU pin voltage at 5 V →0 V→5 V each time. It repeats similarly output is on. When the BSU pi n voltage when output is on defines the under voltage protection recovery voltage. ○1 GND BSU = 15V → 6V LW = 0V VCC = 15V HW = 0V LU = 0V LV = 0V HV = 0V HU = 5V ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND VM 2kΩ VBB = 18V 6V → 15V ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 VM U = 18V 2kΩ 6V → 15V VCC = 15V → 6V LW = 0V HW = 0V LU = 5V LV = 0V HV = 0V HU = 0V ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 ○1 GND

Current Control Operating Voltage (U-phase high side) *Note: Sweeps the IS/RS pin voltage and monitors the U pin voltage. The IS/RS pin voltage when output is off defines the current control operating voltage. V BS Current Dissipation (U-phase high side) HU = 0V/5V IM BSU = 15V LW = 0V VCC = 15V HW = 0V LU = 0V LV = 0V HV = 0V ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 VBB = 18V LW = 0V VCC = 15V HW = 0V LU = 0V LV = 0V HV = 0V HU = 5V IS/RS = 0V → 0.6V 2kΩ 15V ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 VM

Turn-On/Off Loss (low side IGBT + high side FRD) LW = 0V VCC = 15V HW = 0V LU = PG LV = 0V HV = 0V HU = 0V IM L VM VBB/U = 280V 5mH 2.2μF Input (LU = PG) IGBT (C-E Voltage) (U-GND) Wtoff Wton ○1 GND ○2 NC ○3 NC ○4 HU ○5 HV ○6 HW ○7 LU ○8 LV ○9 LW ○10 RS ○11 DIAG ○12 NC ○13 VREG ○14 NC ○15 VCC ○16 GND ○17 U ○18 BSU ○19 IS1 ○20 IS2 ○21 BSV ○22 V ○23 VBB ○24 BSW ○25 W ○26 IS3 Power Supply Current

HDIP26-P-1332-2.00 Unit : mm Weight: 3.8 g (typ.)

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