TPD1046F TOSHIBA | Alldatasheet

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Technical content

Features

  • Two built-in power IC chips with a structure combining a control block and a vertical power MOSFET (L 2-π-MOS) on each chip.
  • Can directly drive a power load from a CMOS or TTL logic.
  • Built-in protection circuits agai nst overvoltage (active clamp), overtemperature (thermal s hutdown), and overcurrent (current limiter).
  • Low Drain-Source ON-resistance: RDS (ON) = 0.2 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)
  • Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)
  • Low Input Current: IIN = 600 μA (max) (@VIN = 5 V, Tch = -40~125°C)
  • 8-pin SOP package with embossed-tape packing. Pin Assignment (top view) M a r k i n g Note 1: Due to its MOS structure, this product is sensitive to static electricity. SOP8-P-1.27A Weight: 0.08 g (typ.) DRAIN1 DRAIN1 DRAIN2 IN2 SOURCE1 IN1 SOURCE2 DRAIN2 (TOP VIEW) TPD1046 F Lot No. (weekly code) A line indicates Lead (Pb)-Free Finish Part No. (or abbreviation code)

Pin No. Symbol Pin Description

1 SOURCE1 Source pin 1

2 IN1

This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently.

3 SOURCE2 Source pin 2

4 IN2

This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. 5, 6 DRAIN2 Drain pin 2 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. 7, 8 DRAIN1 Drain pin 1 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. DRAIN1 IN1 Overcurrent Detection /Protection Overtemperature Detection /Protection SOURCE1 DRAIN1 DRAIN2 IN2 Overcurrent Detection /Protection Overtemperature Detection /Protection SOURCE2 DRAIN2

Note 2: The overtemperature detector circuits feature hysteresis. After overte mperature is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5°C typ.) in relation to the overtemperature detection temperature. Truth Table VIN V DS Output State Operating State L H OFF H L ON Normal L H OFF H H current limiting(limiter) Overcurrent L H OFF H H OFF Overtemperature Input signal VIN Overcurrent detection Channel temperature Drain current ID Drain-source Voltage VDS Current limiting (limiter) Overtemperature protection (Note 2) Active clampNormal Inductive load VDD VCL(DSS) hysteresis(5℃ typ.) Overtemperature detection Overtemperature recovery

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS(DC) 40 V Drain current ID Internally Limited A Input voltage VIN −0.3~7 V 1device operation (Note 4a) PD(1) 0.95 W Power dissipation (Ta = 25°C) (Note 3-a) 2 devices operation per device (Note 4b) P D(2) 0.54 W 1device operation (Note 4a) PD(1) 0.38 W Power dissipation (Ta = 25°C) (Note 3-b) 2 devices operation per device (Note 4b) P D(2) 0.20 W Single pulse active clamp tolerance (Note 5) EAS 97 mJ Active clamp current IAR 3 A Repetitive active clamp tolerance (Note 3-a) (Note 6) EAR 54 μJ Operating temperature Topr −40~125 °C Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C Thermal Characteristics Characteristics Symbol max Unit 1device operation (Note 4a) Rth (ch-a)(1) 132 Thermal resistance, channel to ambient (Note 3-a) 2 devices operation per device (Note 4b) Rth (ch-a)(2) 231 °C/W 1device operation (Note 4a) Rth (ch-a)(1) 330 Thermal resistance, channel to ambient (Note 3-b) 2 devices operation per device (Note 4b) R th (ch-a)(2) 625 °C/W Note: Using continuously under heavy loads (e.g. the application of high temperatur e/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta ge, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) a nd individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 3: 3 - a : g l a s s e p o x y b o a r d ( a ) 3 - b : g l a s s e p o x y b o a r d ( b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b)

Note 4: a) 1 device operation : power dissipation value or thermal resistance of one side device. b) 2 devices operation per device : power dissipation value or thermal resistance per device when power is impressed evenly. Note 5: VDD = 25 V, Tch = 25°C(initial), L = 10.8 mH, IAR = 3 A, RG = 25 Ω Note 6: Repetitive rating : Pulse width limited by maximum channel temperature.

Electrical Characteristics

Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Tch = 25°C 40 49 60 Drain-source clamp voltage V (CL) DSS - Tch = -40~125°C VIN = 0 V, ID = 1 mA 40 - 60 V Tch = 25°C 1.0 1.6 2.8 Input threshold voltage Vth - Tch = -40~125°C VDS = 13 V, ID = 10 mA 0.9 - 3.0 V Protective circuit operation input voltage range VIN (opr) - T ch = -40~125°C - 4 - 7 V Tch = 25°C - - 10 Drain cut-off current IDSS - Tch = -40~125°C VIN = 0 V, VDS = 12 V - - 30 μA Tch = 25°C - 130 600 IIH (1) - Tch = -40~125°C VIN = 5 V, at normal operation - - 600 High level input current IIH (2) - T ch = -40~125°C VIN = 5 V, when protective circuit is actuated - - 2000 μA Tch = 25°C - 0.14 0.2 Drain-source on resistance R DS (ON) - Tch = -40~125°C VIN = 5 V, ID = 1 A - - 0.3 Ω Load-short tolerance VDS - T ch = -40~125°C V IN = 4～6 V 20 - - V temperature detection TOT(1) - 150 160 - °C Overtemperature detection temperature recovery T OT2() - - V IN = 5 V 125 155 - °C Tch = 25°C 3.0 3.7 - Overcurrent detection IOC - Tch = -40~125°C VIN = 5 V 2.0 - - A Tch = 25°C - 15 100 ton Tch = 25°C - 30 100 Switching time toff Tch = -40~125°C VDD = 13 V, VIN = 0 V/5 V, RL = 13 Ω - - 100 μs Drain-source diode forward voltage V DSF - T ch = 25°C VIN = 0 V, IF = 1 A - - 1.7 V Test Circuit 1 Switching time measuring circuit Test circuit Measured waveforms V VDD=13V RL=13Ω P.G. TPD1046F VDS VIN DRAIN IN SOURCE 13 V 5 V toff ton 90% 90% 10% 10%VDS VIN tr ≦ 0.1μs 90% 10% tf ≦ 0.1 μs 0 V 0 V

IIH(2)-Tch 100 150 200 250 300 350 400 450 500 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 チャネル温度 Tch (℃) 入力電流 IIH(2) (μA) VIN=5V State: Overcurrent IIH(2)-VIN 100 200 300 400 500 600 700 800 900 1000 012345678 入力電圧 VIN (V) 入力電流 IIH (2)(μA) Tch=25°C State: Overcurent IIH(1)-VIN 100 150 200 250 300 350 400 450 500 012345678 入力電圧 VIN (V) 入力電流 IIH (1)(μA) Tch=25°C State: Normal IIH(1)-Tch 100 150 200 250 300 350 400 450 500 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 チャネル温度 Tch (℃) 入力電流 IIH(1) (μA) VIN=5V State: Normal Vth-Tch -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 チャネル温度 Tch (℃) 入力しきい値電圧 Vth (V) VDS=13V ID=10mA V(CL)DSS-Tch -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 チャネル温度 Tch (℃) ドレイン･ソース間クランプ電圧 V(CL)DSS (V) VIN=0V ID=1mA Drain-source clamp voltage V(CL)DSS (V) Channel temperature T ch (°C) Input threshold voltage Vth (V) Channel temperature T ch (°C) Channel temperature T ch (°C) High level input current IIH(1) ( μA) High level input current IIH(1) ( μA) Input voltage V IN (V) High level input current IIH(2) ( μA) Channel temperature T ch (°C) High level input current IIH(2) ( μA) Input voltage V IN (V) V(CL)DSS – Tch Vth – Tch IIH(1) – Tch IIH(1) –VIN IIH(2) – Tch IIH(2) –VIN VIN = 0V ID = 1mA VDS = 13V ID = 10mA VIN = 5V State : Normal Tch = 25 °C State : Normal VIN = 5V State : Overcurrent Tch = 25 °C State : Overcurrent

ton,tof f-VIN 012345678 入力電圧 VIN (V) スイッチングタイム ton,toff (μs) VDD=13V RL=13Ω Tch=25°C toｆｆ ton ton,toff－Tch -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 チャネル温度 Tch (℃) スイッチングタイム ton,toff (μs) VDD=13V VIN=5V R L=13Ω ton toｆｆ IOC-VIN 012345678 入力電圧 VIN (V) 過電流検出値 IOC (A) Tch=25°C IOC-Tch -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 チャネル温度 Tch (℃) 過電流検出値 IOC (A) VIN=5V RDS(ON)-VIN 0.05 0.1 0.15 0.2 0.25 0.3 012345678 入力電圧 VIN (V) ドレイン･ソース間オン抵抗 ＲDS(ON) (Ω) ID=1A Tch=25°C RDS(ON)-Tch 0.05 0.1 0.15 0.2 0.25 0.3 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 チャネル温度 Tch (℃) ドレイン･ソース間オン抵抗 ＲDS(ON) (Ω) VIN=5V ID=1A Drain-source on resistance RDS(ON) (Ω) Channel temperature T ch (°C) Drain-source on resistance RDS(ON) (Ω) Input voltage V IN (V) RDS(ON) – Tch RDS(ON) – VIN IOC – Tch Overcurrent detection IOC (A) Channel temperature Tch (°C) IOC – VIN Overcurrent detection IOC (A) Input voltage VIN (V) ton,toff – Tch Switching time t on,toff ( μs) Channel temperature T ch (°C) ton,toff – VIN Switching time t on,toff ( μs) Input voltage V IN (V) VIN = 5V ID = 1A ID = 1A Tch = 25 °C VIN = 5V Tch = 25 °C VDD = 13V VIN = 5V RL = 13Ω VDD = 13V RL = 13Ω Tch = 25 °C

rth(ch-a)-tw 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 パルス幅 tw (s) 過渡熱抵抗 rth(h-a) (℃/W) (1) (2) (3) (4) (1)Mounted on glass epoxy board(a) 1device operation (2)Mounted on glass epoxy board(a) 2device operation (per device) (3)Mounted on glass epoxy board(b) 1device operation (4)Mounted on glass epoxy board(b) 2device operation (per device) Measuring single pulse,Ta=25℃ PD-Ta 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -40 -20 0 20 40 60 80 100 120 140 160 周囲温度 Ta (℃) 許容損失 PD (W) (1) (2) (3) (4) TOT-VIN 100 120 140 160 180 200 220 240 012345678 入力電圧 VIN (V) 過熱検出温度 TOT (℃) VDD=13V TOT(1) – VIN Overtemperature detection T OT(1) (°C ) Input voltage V IN (V) PD – Ta Ambient temperature Ta (°C) rth(ch-a) – tW Transient thermal resistance r th(ch-a) (°C/W ) Pulse width t W (s) Power dissipation P D (W ) VDD = 13V (1)Mounted on glass epoxy board(a) 1 device operation (2)Mounted on glass epoxy board(a) 2 devices operation (per device) (3)Mounted on glass epoxy board(b) 1 device operation (4)Mounted on glass epoxy board(b) 2 devices operation (per device) (1)Mounted on glass epoxy board(a) 1 device operation (2)Mounted on glass epoxy board(a) 2 devices operation (per device) (3)Mounted on glass epoxy board(b) 1 device operation (4)Mounted on glass epoxy board(b) 2 devices operation (per device) Measureing single pulse, Ta = 25 °C

Weight: 0.08 g (typ.)

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

  • The information contained herein is subject to change without notice.
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