TPD1038F_07 TOSHIBA | Alldatasheet

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Technical content

Features

  • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOS FET on a single chip.
  • One side of load can be grounded to a high-side switch.
  • Can directly drive a power load from a microprocessor.
  • Built-in protection agains t overheating and load short-circuiting.
  • Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting, opening, or overheating.
  • Up to -(50-V DD)～ -(60-VDD) of counterelectromotive force from an L load can be applied.
  • Low on-resistance : RDS(ON)=120mΩ(max) ( @ VDD = 12 V、Ta = 25℃、Io = 2 A)
  • 8-pin SOP package for surface mounting that can be packed in tape P i n A s s i g n m e n t M a r k i n g Due to its MOS structure, this product is sensitive to static electricity. SOP8-P-1.27A Weight：0.08g(typ.) IN VDDOUT GND DIAG VDD VDD VDD (TOP VIEW) TPD1038 F Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Pin No. Symbol Function 1 OUT Output pin. When the load is short-circuited and current in excess of the detection current (3A min) flows to the output pin, the output automatically turns on or off. 2 GND Ground pin. 3 DIAG Self-diagnosis detection pin.Goes low when overheati ng is detected or when output is short circuit with input on (high). N-channel open drain. 4 IN Input pin. Input is CMOS compatible, with pull do wn resistor connected. Even if the input is open, output will not accidentally turn on. 5,6,7,8 V DD Power pin. VDD OUT 5V regulator Bandgap MOSFET (π-MOSⅤ) charge pump driver current detection overheat detection DIAG GND IN

output Output signal Output state Operating state H H H on L L L off Normal H L L current limit (switching) L L L off Load short H L L off L L L off Overheating H H H on L H H off Load open H L L off L H H off Overheating and load open Input signal Overcurrent detection Load open Output current Channel temperature Overheating detection 150℃(min) Hysteresis 5℃ (typ.) Tch Diagnostic output Current limit Thermal shutdown Load open detection Normal Output signal

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V DC VDD(1) 25 V Supply voltage Pulse VDD(2) 60(RS=1Ω,τ=250ms) V DC VIN(1) －0.5～12 V Input voltage Pulse VIN(2) V DD(1)+1.5(t=100ms) V Diagnosis output voltage VDIAG －0.5～25 V Output current IO Internally limited A Input current IIN ±10 mA Diagnosis current IDIAG 5 mA Power dissipation (Note 1-a) PD(1) 1.1 W Power dissipation (Note 1-b) PD(2) 0.425 W Operating temperature Topr －40～110 °C Channel temperature Tch 150 °C Storage temperature Tstg －55～150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Resistance Characteristic Symbol Rating Unit 113.5 (Note1-a) Thermal resistance Rth(ch-a) 294.0 (Note1-b) °C /W Note 1: 1-a : Mounted on glass epoxy board (a) 1-b : Mounted on glass epoxy board (b) FR-4 25.4×25.4×0.8 (Unit：mm) FR-4 25.4×25.4×0.8 (Unit：mm)

Electrical Characteristics (Ta=25°C) Characteristics Symbol Test circuit Test condition min typ. max Unit Operating supply voltage VDD(OPR) － － 6 12 18 V Current dissipation IDD － VDD=12V, VIN=0V, RL=10Ω － － 3 mA H-level input voltage VIH － VDD=12V 3.5 － － V L-level input voltage VIL － VDD=12V － － 1.5 V H-level input current IIH － VDD=12V, VIN=5V － － 200 μA On resistance RDS(ON) － VDD=12V, IO=2A － － 0.12 Ω Output leakage current IOL － VDD=12V － － 1 mA Diagnosis output voltage “L”-level VDL － VDD=12V, VIN=0V, IDL=1mA RL=10Ω － － 0.4 V Diagnosis output current “H”-level I DH － VDD=12V, VIN=5V, RL=10Ω, VDH=12V － － 10 μA IOC(1)(Note2) 1､2 VDD=12V 3 － 9 A Over current detection IOC(2)(Note3) 3 VDD=12V, RL=0.1Ω － － 10 A Overheating detection TOT － VDD=12V 150 － 200 ℃ Load open detection (Note4) Rop － VDD=12V, VIN=0V 5 17 － k Ω ton － － 100 μs Switching time toff

4 VDD=12V, RL=10Ω

－ － 40 μs tDLH － 70 － μs Diagnosis delay time tDHL

5 VDD=12V, RL=10Ω

－ 22 － μs Output clamp voltage Vclamp － VDD=12V, VIN=0V, IO=1A, L=10mH -(60- VDD) － -(50- VDD) Ｖ (Note 2) Over-current detection (Note 3) Peak current @ current limit function (Note 4) Load open detection function : VDD = 8 ～ 18V Test Circuit 1 Over current detection I OC(1) ：Over current detection when load current is increased while VIN = "H" VDIAG IO IOC(1) ＜0.4V VDL 0TPD1038F VDD=12V OUT RL IO 2.5kΩ VDIAG VIN 5V DIAG

Over current detection I OC(1) ：Over current detection when load is short circuit and VIN = "L" → "H" Test Circuit 3 Over current detection I OC(2) Test Circuit 4 Switching time t on, toff Test Circuit 5 Diagnosis delay time t DLH, tDHL VIN IO IOC(2) TPD1038F VDD=12V OUT RL IO 2.5kΩ VDIAG VIN P.G DIAG VDIAG IO IOC(1) ＜0.4V VDL TPD1038F VDD=12V OUT RL=0.1Ω IO 2.5kΩ VDIAG VIN P.G DIAG TPD1038F VDD=12V OUT RL=10Ω VIN P.G DIAG VOUT VOUT VIN 90% 90% 10% 10% ton t off ≒12V 90% 10% ≦0.1μs ≦0.1μs RL=10Ω TPD1038F VDD=12V OUT VIN P.G VDIAG 5kΩ VDIAG VIN 50% 90% 10% 50% tDLH tDHL 90% 10% ≦0.1μs ≦0.1μs

SU P P LY VOLTAGE VDD (V) L- LEV EL INPUT V OLTA GE VIL (V) Tch=25°C VIH - VDD 048 1 2 1 6 2 0 SU P P LY VOLTAGE VDD (V) H-LEVEL INPUT VOLTAGE VIH (V) Tch=25°C RDS(ON) - VDD 0.04 0.08 0.12 0.16 0.2 048 1 2 1 6 2 0 SU P P LY VOLTAGE VDD (V) ON RESISTA NCE RDS(ON) (Ω) IO=2A Tch=25°C RDS(ON) - Tch 0.04 0.08 0.12 0.16 0.2 -80 -40 0 40 80 120 160 OPERA TING TEMPERA TURE Tch (°C) ON RESISTA NCE RDS(ON) (Ω) VDD=12V IO=2A VDS(ON) - IO 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 00 . 511 . 522 . 533 . 54 OUTPUT CURRENT IO (A) ON VOLTAGE VDS(ON) (V) VDD=12V Tch=25°C IDD - VDD 0.5 1.5 2.5 048 1 2 1 6 2 0 SU P P LY VOLTAGE VDD (V) CURRENT DISSIPA TION IDD (m A) RL=10Ω，VIN=0V LOAD OPEN，VIN=5V LOAD OPEN，VIN=0V Tch=25°C IDD – VDD CURRENT DISSIPATION I DD (mA) VDS(ON) – IO ON VOLTAGE V DS(ON) (V) ON RESISTANCE R DS(ON) ( Ω) RDS(ON) – Tch RDS(ON) – VDD ON RESISTANCE R DS(ON) ( Ω) H-LEVEL INPUT VOLTAGE V IH (V) VIH – VDD VIL – VDD L-LEVEL INPUT VOLTAGE V IL (V) CHANNEL TEMPERATURE T ch ( ° C ) SUPPLY VOLTAGE V DD (V) SUPPLY VOLTAGE V DD (V) SUPPLY VOLTAGE V DD (V) SUPPLY VOLTAGE V DD (V) OUTPUT CURRENT I O (A)

-80 -40 0 40 80 120 160 OPERA TING TEMPERA TURE Tch (°C) DIAGNOSIS DELAY TIME tDHL (μs) VDD=6V VDD=18V VDD=12V RL=10Ω tDLH－Tch 120 160 200 -80 -40 0 40 80 120 160 OPERA TING TEMPERA TURE Tch (°C) VDD=6V VDD=18V VDD=12V RL=10Ω SWITCHING CHA RA CTERISTICS 120 160 048 1 2 1 6 2 0 SUPPLY VOLTAGE VDD (V) SWITCHING TIME (μs) tON tOFF RL=10Ω Tch=25°C IOC - Tch -80 -40 0 40 80 120 160 OPERA TING TEMPERA TURE Tch (°C) OV ER CURRENT PROTECTION IOC (A) IOC(2) IOC(1) VDD=12V Vclamp - Tch -80 -60 -40 -20 -80 -40 0 40 80 120 160 OPERA TING TEMPERA TURE Tch (°C) VDD=12V VIN=0V IO=1A L=10mH VDL - Tch 120 160 200 -80 -40 0 40 80 120 160 OPERA TING TEMPERA TURE Tch (°C) IDL=1mA IDL=2mA VDD=12V OVER CURRENT DETECTION I OC (A) IOC – Tch VDL – Tch DIAGNOSIS OUTPUT VOLTAGE V DL (mV) Vclamp – Tch OUTPUT CLAMP VOLTAGE V clamp (V) SWITCHING TIME ( μs) SWITCHING CHARACTERISTICS DIAGNOSIS DELAY TIME t DLH ( μs) tDLH – Tch tDHL – Tch DIAGNOSIS DELAY TIME t DHL ( μs) SUPPLY VOLTAGE V DD (V) CHANNEL TEMPERATURE T ch ( ° C ) CHANNEL TEMPERATURE T ch ( ° C ) CHANNEL TEMPERATURE T ch ( ° C ) CHANNEL TEMPERATURE T ch ( ° C ) CHANNEL TEMPERATURE T ch ( ° C )

-80 -40 0 40 80 120 160 OPERA TING TEMPERA TURE Tch (°C) LOA D OPEN DETECTION ROP (kΩ) ROPL ROPH VDD=12V ROPH:LOAD OPEN DETECTION RESITANCE ROPL:LOAD OPEN DETECTION RESET RESISTANCE ROP - VDD 100 048 1 2 1 6 2 0 SU P P LY VOLTAGE VDD (V) LOAD OPEN DETECTION ROP (kΩ) ROPL ROPH Tch=25°C ROPH:LOAD OPEN DETECTION RESITANCE ROPL:LOAD OPEN DETECTION RESET RESISTANCE PD - Ta 0.4 0.8 1.2 1.6 -40 0 40 80 120 160 A MBIENT TEMPERA TURE Ta (°C) POWER DISSIPA TION PD (W) (2) (1) (1)MOUNTED ON GLASS EPOXY BOARD (a) (2)MOUNTED ON GLASS EPOXY BOARD(b) － VDD 120 160 048 1 2 1 6 2 0 SU P P LY VOLTAGE VDD (V) D I AGN OSI S D E LAY TI M E (μs) tDLH tDHL Tch=25°C RL=10Ω 電源電圧 V DD (V) オ ー プ ン 検 出 抵 R op tDLH,tDHL – VDD DIAGNOSIS DELAY TIME t DLH,tDHL ( μs) LOAD OPEN DETECTION R OP ( k Ω) ROP – VDD ROP – Tch LOAD OPEN DETECTION R OP ( k Ω) PD – Ta POWER DISSIPATION P D (W) AMBIENT TEMPERATURE Ta (°C) CHANNEL TEMPERATURE T ch ( ° C ) SUPPLY VOLTAGE V DD (V) SUPPLY VOLTAGE V DD (V) rth(ch-a) - tW 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH tw (s) TRANSIENT THERMAL RESISTANCE rth(ch-a) (°C/W) (1) (2) (1)MOUNTED ON GLASS EPOXY BOARD(a) (2)MOUNTED ON GLASS EPOXY BOARD(b) SINGLE PULSE,Ta=25℃

Weight: 0.08g (typ.)

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.