TPD1033F

TPD1033F TOSHIBA | Alldatasheet

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TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT HIGH-SIDE POWER SWITCH for MOTORS, SOLENOIDS, and LAMP TPD1033F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self-protection and diagnostic functions.

FEATURES

@ A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (z-MOS) on a single chip. SOP8-P-1.27A . an | Weight : 0.08 g (Typ.) @ One side of load can be grounded to a high-side switch. @ Can directly drive a power load from a microprocessor. © Built-in protection against overheating and load short circuiting. @ Incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, opening, or overheating. @ Up to -10V of counterelectromotive force from an L load can be applied. @ Low on resistance : RON = 220m (Max) @ Low operating current : Ipp = 1mA (Typ.), at Vpp = 12V, Vin = 0 @ 8-pin SOP package for surface mounting can be packed in tape. (Note) : That because of its MOS structure, this product is sensitive to static electricity. 980910EBA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. Site products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-02-17 1/10

Product no. wT a] vc TPD1033F a ois [2 | our Oooo ene Le] our *X Lot Number Vo [a | | s | our 7 Oe Month (Starting from Alphabet A) Year (Last Number of the Christian Era) (TOP VIEW) BLOCK DIAGRAM SENSE THERMAL SHUTDOWN vias @— © our o<] © our PIN DESCRIPTION | PIN No. | SYMBOL FUNCTION Input is CMOS-compatible, with pull-down resistor connected. Even if the input is open, output will not accidentally turn on. Self-diagnosis detection pin. Goes low when overheating is detected or when 2 DIAG | output is short circuited with input on (high). N-channel open drain. [4 | Vp [Power pin. SSCS Output pin. 5,6,7 OUT When the load is short circuited and current in excess of the detection current (8A Typ.) flows to the output pin, the output automatically turns on or off. 2000-02-17 2/10

INPUT SIGNAL | i i i i i DETECTION H H H il H OVERCURRENT Hi ' rt Hi | Hi t DETECTION H 1 it H i i OUTPUT SIGNAL | | | ' | | ofF | ft fl H CURRENT LIMIT 1 4 ! ' H 14 ' ' rot ' DIAGNOSIS OUTPUT TRUTH TABLE INPUT SIGNAL OUTPUT SIGNAL |DIAGNOSIS OUTPUT STATE ee ee ‘rcui toad short circuited a | [ft open Overheating 2000-02-17 3/10

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage | —~puise | Vpn (2)_| 60 (Rs = 10, « = 250ms) input Vohage put Voltage | pulse [Vin (a) | Wop) + 15 @ = 100m) Diagnosis Output Voltage VDIAG -0.5~25 fOutput Current | lo | Internally Limited | _A_| Input Current in [#10 —* ma Diagnosis Output Curent | Inag_| 5 ———*idt ma‘ | 1.4 (Note 1) issipati = 25% Ww Power Dissipation (Ta = 25°C) Le | 2.4 (Note 2) Operating Temperature | To | -a0~110~——S=«d; Storage Temperature =55~150 Lead Temperature /time TsOL 275 (5s), 260 (10s) THERMAL RESISTANCE CHARACTERISTIC SYMBOL TEST CONDITION UNIT Thermal Resistan Rth | 89:3 (Note) tec pw ermal Resistance th Ga) 52.1 (Note 2) (Note 1) : Mounted on glass epoxy board (1 inch? x 0.8 t) (DC) (Note 2) : Mounted on glass epoxy board (1 inch? x 0.8t) (ty = 10s) 2000-02-17 4/10

ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc = -40~110°C, Vpp = 8~18V) TEST CHARACTERISTIC SYMBOL TEST CONDITION fn |v. | UNIT CUIT Operating Supply Vortag_|Vop(orml — |__| 5| 2] |v | Current Disipation | inp | — [Vop = 72V, Vin=0 C= [otf 5 [ma | input vor Wine Wee tavgsa pss pepe nput Voltage vi |= [von = 2V,lo=12ma | — | — | as] Vv | input Cuvrene wm [= Yoo=12V, vin = sv | — | 50 | 200 | 2a | put Cure Cina |= [yop = 2v. Vin = 0 [02 | — [02 | ua | Vpp = 12V, Io = 2A, On Voltage Vps (ON) | — [¥ = 25°C Vv : Vpp = 12V, Io = 2A, On Resistance Rps (ON) | — |v = 25°C a Output Leakage Current_| lor | — [Yop = 18V, Vin =0 = = 72 [ma | Diagnosis Outputl,,, , Vi Vpp = 12V, Ip_ = 2mA Vv paz re en] vm | foormversonm || — | om Diagnosis Output,,, ,,, Vpp = 18V, VpH = 18V A arene fH tee] ton | [Moos ev von= rev | — | | 10 | oa jst | | ple] sda A Ni Overcurrent Detection (Note 3) Vppb = 12V, Te = 25°C 15 (2) 2 | a (Note 4) Overheating [Temperature] Ts | — | |_150 | 160 | 200 | *c | Detection [Hysteresis ats | — | D— [wf — |e | Open Detection Resistance | Reps | — |Vop = 8V [1 [20 | 700 [eo | [ton [3 [Yoo = 12V, RL = 50, | os | Switching Time ton 3_|Ypp 5, L=5 | 10 | 100 [| — | zs torr Te = 25°C [to | 30 [ = J es | (Note 3) : Overcurrent detection value when load is short circuited and Vjy = “L” >"H" (Note 4) : Overcurrent detection value when load current is increased while Vjjy = “H” 2000-02-17 5/10

o sv O- Vpp = 12V $ 'o VoL © pic vod ; ain TPD1033F out H € i ' IN GND l ° sv ' P.6@ vin RL i i ‘ <0.4V nm) Vou TEST CIRCUIT 2 Over-voltage detection oO sv O- Vpp = 12V g 'o nS 1 Isey VoL Diag §=—- VOD 4 ' TPD1033F our} 1 q i IN nD lo SV H Ya SV VIN x ‘ <0.4V ] I a) Voi TEST CIRCUIT 3 Switching time S 90% INPUT WAVEFORM Vin Yop ° 10% TPD1033F our| © Vout IN GND om (concerns atv °.6@) Vin OUTPUT WAVEFORM R=50 Vout 10% o 2000-02-17 6/10

F TPD1033 (ON) — HIBA Vos ( ye = TOS - | Vpp i °. SURREY EE 'pp To s Esceeccets HHH [| z Eh 7 fH : H eo |: | A soecdes § ae rT [ Z aa _| - = a +t z ee Set ae FEEEEEE ° CAE : : : = FE a : ENT Io (A) ) f :: Ft c ° ‘ ITPUT CURRI a 4 i7\\_| aoone ; | g DEERE : : 3 Lor Vpp W) _ -. os PLY VOLTAGE 7 m= E S (ON) on A HH : se iii won SunEREE FEE “fit | miiiaisiit é an ry § ooo Co ef | eas a i : sssiesets 6 | | | 1 vy , f basaae : ° ‘ PLY VOLTA ; Seafesatises i “Pee 80 120 i . | + | | ot ° serasne Te (OQ eiaeiitead Is TO p= 12 =, FCoE : H PEE pabey | 2 ara sas an LE} ii af i : esesresrtae aes ce 2 | is | ts m 7 +H co |

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8 “PELL | “ atti tit TT tt ‘ rT CRE er LLP ttt ttt | ttt t ti | Pri tt | -80 -40 0 40 80 120 0 4 8 12 16 20 24 CASE TEMPERATURE Tc (°C) SUPPLY VOLTAGE Vpp (V) «0 Rops - Te Pp - Ta : 5 T=] , Sen £40 = ToT TINE FY inch? x08) & TTAEET TPP rey ~ 2p ++ KI got PAE ENCE e7OOONEEE 8 ee FENG EEE PCN es 8 ft PE PIN eet @ “OOD NN E ttt ti | Nett | g FOP PrN se g “COO NT EEE Pees re Wo I -80 -40 0 40 80 120 160 -40 0 40 80 120 160 CASE TEMPERATURE Tc (°C) AMBIENT TEMPERATURE Ta (°C)

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& Lili ti tit ttt | 0 4 8 12 16 20 24 SUPPLY VOLTAGE Vpp (V) PRECAUTION : 1. Since protection for, for example, reverse connection of the battery is not provided, provide protection using external circuits. 2000-02-17 8/10

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SOP8-P1.27A Unit : mm 8 5 al 9 + oO 1 4 | + 0.595TYP 0.40.1 (510.25 @ 5.5MAX 5,040.2 Q 8 * f—) a s 0.50.2 Weight : 0.08 g (Typ.) 2000-02-17 10/10