TPD1030F TOSHIBA | Alldatasheet
Document overview
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Technical content
Features
- Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip.
- Can directly drive a power load from a CMOS or TTL logic.
- Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
- Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V , ID = 0.5 A, Tch = 25°C)
- Low Leakage Current: IDSS = 10 µA (max) (@VIN = 0 V , VDS = 30 V , Tch = 25°C)
- Low Input Current: IIN = 300 µA (max) (@VIN = 5 V , Tch = 25°C)
- 8-pin SOP package with embossed-tape packing. Pin Assignment (top view) Note1: That because of its MOS structure, this product is sensitive to static electricity. Weight: 0.08 g (typ.) Preliminary
- TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the re sponsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, pleas e ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications . Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
- The products described in this document are subject to the foreign exchange and foreign trade laws.
- The information contained herein is presented only as a guide for the applications of our products. No responsibility is assume d by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from i ts use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
- The information contained herein is subject to change without notice. 980910EBA1 SOURCE1 IN1 SOURCE2 DRAIN1 DRAIN1 DRAIN2 IN2 4 5 DRAIN2
Pin No. Symbol Pin Description
1 SOURCE1 Source pin 1
2 IN1
This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently.
3 SOURCE2 Source pin 2
4 IN2
This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. 5, 6 DRAIN2 Drain pin 2 Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. 7, 8 DRAIN1 Drain pin 1 Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. Preliminary DRAIN1 IN1 Overcurrent Detection /Protection Overtemperature Detection /Protection SOURCE1 DRAIN1 DRAIN2 IN2 Overcurrent Detection /Protection Overtemperature Detection /Protection SOURCE2 DRAIN2
Note2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5°C typ.) in relation to the overheating detection temperature. Truth Table IN V OUT Mode L H H L Normal L H H H Overcurrent L H H H Overtemperature Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DS (DC) 40 V Drain current I D Internally Limited A Input voltage V IN −0.3 to 7 V Power dissipation (t = 10 s) P D 2.0 (Note3) W Operating temperature T opr −40 to 110 °C Channel temperature T ch 150 °C Storage temperature T stg −55 to 150 °C Note3: Drive operation: Mount on glass epoxy boad [1 inch2 × 0.8 t] (in the two devices driving) Overcurrent Protection Input Signal Output Current Current limiting (limiter) Overtemperature protection (Note2) Overtemperature Protection Preliminary
Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note3) Rth (ch-a) 62.5 °C/W Note3: Drive operation: Mount on glass epoxy boad [1 inch2 × 0.8 t] (in the two devices driving) Electrical Characteristics (Tch ==== 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Drain-source clamp voltage V (CL) DSS V IN = 0 V, ID = 1 mA 40 60 V Input threshold voltage V th VDS = 13 V, ID = 10 mA 1.0 2.8 V Protective circuit operation input voltage range VIN (opr) 3 7 V Draint cut-off current I DSS VIN = 0 V, VDS = 30 V 10 µA IIN (1) VIN = 5 V, at normal operation 300 Input current IIN (2) VIN = 5 V, when protective circuit is actuated 390 µA Drain-source on resistance R DS (ON) VIN = 5 V, ID = 0.5 A 0.44 0.6 Ω Overtemperature protection T S VIN = 5 V 150 160 °C Overcurrent protection I S VIN = 5 V 1.0 A tON 1 30 Switching time tOFF 1 VDD = 13 V, VIN = 5 V, ID = 0.5 A 30 µs Source-drain diode forward voltage V DSF IF = 1 A, VIN = 0 V 1.7 V Test Circuit 1 Switching time measuring circuit Test Circuit Measured Waveforms VIN Waveform VOUT Waveform 5 V 90% tON 10% 10% 90% tOFF 13 V To be set so that ID = 0.5 A. V 13 V P.G TPD1030F IN OUT GND Preliminary
Weight: 0.08 g (typ.) Preliminary