TPD1018F

TPD1018F TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT HIGH-SIDE POWER SWITCH for MOTORS, SOLENOIDS, and LAMP DRIVERS TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self-protection and diagnostic functions. FEATURES Sy @ A monolithic power IC with a new structure combining a < se! control block (Bi-CMOS) and a vertical power MOS FET CTR Yea? (z-MOS) on a single chip. ad @ One side of load can be grounded to a high-side switch. @ Can directly drive a power load from a microprocessor. © Built-in protection against overvoltage, overheating, and Weight» 0.089 (Typ) load short circuiting eight : 0.089 (Typ. © Incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, overvoltage, or overheating. @ Low on resistance : Rps (ON) = 9-8 (Max) © Low operating current: Ipp = 120A (Typ.), @ Vpp = 13.2V, Vin=0 @ 10-pin SSOP package for surface mounting. BLOCK DIAGRAM PIN ASSIGNMENT BANDGAP our [7 vic | — cno Q} (3) ono DIAG THERMAL veo @ lw SHUTDOWN no of ra O our (TOP VIEW) (Note) That because of its MOS structure, this product is sensitive to static electricity. 961001EBA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical sensitivity and vulnerability to physical stress. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified ‘operating rangot at tot forth in the most recent products specification. Aleo, please keep in mind the precautions and conditions tot forth in the TOSHIBA Semiconductor Reliability Handbook. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. © The information contained herein is subject to change without notice 9997-08-21 177

| iN No. | SYMBOL FUNCTION Output pin.

1 OUT |When the load is short circuited and current in excess of the detection current

(0.5A min) flows to the output pin, the current limiter operates to protect the IC. Power pin.

5 Vv Incorporates an overvoltage protection function which turns off the output when

DD the voltage applied exceeds 25V (min). Protects IC and load. Incorporates 2V (typ) hysteresis. Input is CMOS-compatible, with pull-down resistor connected. Even if the input is open, output will not accidentally turn on Self-diagnosis detection pin. Goes low when overcurrent, overheating, or DIAG overvoltage is detected. N-channel open drain. TIMING CHART INPUT SIGNAL | Hi yo i,t i hoot tt OVERVOLTAGE DETECTION} | | io it Hi . ‘ Hi H Hi Hl H Hl fl H 1 Hi H OVERHEATING DETECTION | | _—t | | it i OVERCURRENT DETECTION H i i t it i i i i ior rotor toy moet Popo} Pot OUTPUT SIGNAL OF OF CURRENT LIMIT TRUTH TABLE INPUT SIGNAL OUTPUT SIGNAL |DIAGNOSIS OUTPUT STATE a po Load short Overheati Pe erating a ben 1997-08-21 2/7

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-source Voltage [ Vos ff | oc | vom | Supply Voltage [pulse | _Vpp(2)_| 60(Rs=10, ¢=250ms) on Vor VING =05~25 mem eeesé [Output Current | tg PA Jinput Current] | tT mal [Power Dissipation [Ta=25°C] Pp | 300m | Operating Temperature [Top | = 40~125 °C Hunction Temperature | vj | 10S [storage Temperature [Tig [| 55~ 150° ELECTRICAL CHARACTERISTICS (Tj = -40~125°C) TEST CHARACTERISTIC SYMBOL | ciR- TEST CONDITION Typ. | MAX | UNIT cult Operating Supply Voltag [Vpp(opr)| — | CST ST 2 | 5 issipati [top (1) _| Vpp=13.2V, Vin=0, j= 85°C | — | 120 | 300 | ZA | Current Dissipation pee — | Vpp= 13.2V, Vin=5V L— tf 15 [ma | Input Voltage [Vin | = [Vpp=13.2V, Io=300ma_ fas | | — fv | put Voltag [vi | = [vp=132V, i= 1002 | — | — | 18] V Vpp = 13.2V, Vin =5V Input Current [tin (a) _| DD IN [| = | 10] 100] | tin (2) | Vpp=13.2V, Vin=0 [=02 | — | 02] pA | Vpp = 13.2V, Ig = 300mA, On Voltage Vps (ON) = | Tj =25°C Vv Vpp = 13.2V, Ig = 300mA, RDS(ON)(1) Tj =25°C 0.7 a On Resistance Vpp = 13.2V, I =300mA, Ros(ony(2)|__| +; 4o~85°c 12] 9 Diagnosis Output «|» teyell VpL Vpp = 13.2V, IpL=1mA v Voltage ‘ Diagnosis Output, Vpp = 25V, IpH=25V A Pe real on [= poosanimcw —|= =| wa] Output Leakage Current [lor | — [Vpp=25V, Vin=0 | — | — | 100 | na | |Overcurrent Protection | Is | — | Vpp=13.2V, Tj =25°C jos | — | 3] a | Overheating [150 | 760 | 200-| | Protection | — | 20] 50] *c | Overvoltage | Voltage Vpps a Protection po Vpp = 13.2V, Ri =400. | us _| switching Time ON 7 {voD=! L [| — | 50 | — | xs 1997-08-21 3/7

Yoo= 132v INPUT WAVEFORM Vin J 0 10% pias O—C] “ rover b= “er e 90% woh ©) a=a00 OUTPUT WavEroni 10%

i Ipp - Vpp os, Vps (ON) - !o COCCI aa COOCLL LL een COCA Pose 2 10 s «tet LTT tt |

2 MCC a

3 LEP 8 eee

§ ELE TT beri tt ae ee 2 eer 8 CTT et rr Beet gs beet eet

2 COT Saar

8 SCOOT Pee COO Bz

0 4 8 12 16 20 24 28 0 01 0.2 03 04 05 0.6 SUPPLY VOLTAGE Vpp (V) OUTPUT CURRENT Io (A) Rps (ON) - Ti 1 Rps (ON) - VDD 1.0) ree, EEE eof Oo TTT TT Ty TT 8 Meee

2 LLI TT TT et 2 CLEC EEE

3 of _ |i |i tert tt s “COCO e ELL tte ‘ of PEE Pf teerrrrr EO Ree BE Bee goof | tT TT tT TT 5 Coe eee See COE Ltt t itty itt tt oLP TTT TT tty] -80 -40 0 40 80 120 160 0 4 8 12 16 20 24 28 JUNCTION TEMPERATURE Tj (°C) SUPPLY VOLTAGE Vpp (V) Is - Tj 5 ViH_ - VoD : Ae]: eg tt ti ttt 2 COCCCoeee eo $s ET PTT Ty Ty yyy i rreeeeeEE EEL 2 g S Ji titty tet yt yy ae

8 TTP ery g fore

ett ett Tt 5 *CTP TEEPE

3 SLC 2 COC Ce

e LTT ti tt tr (| 9 POee eee e {iti titty ty 2 CCCeee eee eee a A (CEE JUNCTION TEMPERATURE Tj (°C) SUPPLY VOLTAGE Vpp (V) fh Tor OT

os Voi - Ti 20 SWITCHING CHARACTERISTICS [TT TT TT TP vera [fete [- pee |

2 PPP id wei a

2°"TTTTLLLLLLei en g g LIV TT TTT Py eT fof} ttt tT itt tt 2 “COOP eer ye Cee eee peen cee 2 2 | Pecootpeceeeed weet gs FL bert Lee a Li TTITNEET TTT ee 3 os a CO to SSE

2 CDEC =H eee EET

3 [| [eee ttl titti ttt Ti tt atti ti tit it i tt | -3 -4 0 40 80 120 160 0 4 8 2 16 2 2 28 JUNCTION TEMPERATURE Tj (°C) SUPPLY VOLTAGE Vpp (V) Vops - Tj os Pp - Ta Ss 50) = “TTT TTT TTT TT ey (tte yy yyy gt ttt ttt tt s weEE tLe s Lit TPT Ty ety te COUONCELCEL eecoeeeeete LEP Nr i E 02 IN ef LTPP PP ry se LLETEINE TT oe eee eee ey 3 as S BERET Pepe a a 80 120 160 ber) 0 40 80 720 760 JUNCTION TEMPERATURE Tj (°C) AMBIENT TEMPERATURE Ta (°C) PRECAUTION: 1. Since protection for, for example, reverse connection of the battery is not incorporated, provide protection using external circuits. 2. Since a negative bias protection circuit for the output pin is not incorporated, when negative bias is applied to the output pin, connect a freewheeling diode (FWD) between OUT and GND. 1997-08-21 6/7

SSOP10-P-225-1.00 Unit : mm 10 6 ; HHHHH 2 un = tl oo 10 a ii HHH 5 0.6TYP 0.4+0.1 5.7MAX 5.24+0.2 Nn x 3 at 3 cag cS 0.52510.2 Weight : 0.089 (Typ.) 1997-08-21 7/7