TPD1011S

TPD1011S TOSHIBA | Alldatasheet

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TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT HIGH-SIDE POWER SWITCH for MOTORS, SOLENOIDS, and LAMP TPD10115S is a monolithic power IC for high-side switches. STL The IC has a vertical MOS FET output which can be SE directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self-protection and diagnostic functions.

FEATURES

@ A monolithic power IC with a new structure combining a contro! block (Bi-CMOS) and a vertical power MOS FET 5 (z-MOS) on a single chip. sis-P. 170A @ One side of load can be grounded to a high-side switch. a © Can directly drive a power load from a microprocessor. LBF @ Built-in protection against overheating and load short _ circuiting. Also incorporates a diagnosis function that Ne allows diagnosis output to be read externally at load [ OQ short circuiting, opening, or overheating. ae @ Up to -10V of counterelectromotive force from an L load can be applied. ~ @ Low on resistance : Ron =60mQ (Max) : @ Low operating current: Ipp =1mA (Typ.), at Vpp = 12V, 1 Vin=0 ZIP5-P-1.70 @ 5-pin TO-220 insulated package. LBS @ Three standard lead configurations. — PIN ASSIGNMENT © DOUBLER \\h DRIVER 1° ZIP5-P-1.70A MULTI~ Weight PROTECTION SSIP5-P-1.70A_: 2.2g (Typ.) ZIP5-P-1.70 —: 2.2g (Typ.) ZIP5-P-1.70A_ : 2.2g (Typ.) o) @ @ So) @ IN DIAG GND out Vp (Note) That because of its MOS structure, this product is sensitive to static electricity. 961001682 @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general. can malfunction or fall due to their inherent electrical sensitivity and vulnerability to physical stress. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified ‘operating rangot at tot forth in the most recent products specification. Aleo, please keep in mind the precautions and conditions tot forth in the TOSHIBA Semiconductor Reliability Handbook. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. © The information contained herein is subject to change without notice 1997-08-21 1/10

o<} O ouT PIN DESCRIPTION | Pin no. | SYMBOL FUNCTION

1 Input is CMOS-compatible, with pull-down resistor connected

Even if the input is open, output will not accidentally turn on. Self-diagnosis detection pin. Goes low when overheating is detected or when 2 DIAG | output is short circuited with input on (high). N-channel open drain. [3 [GND [Ground pin. ——SSSSCSCSCSCSSSSSSCSCSCSCSCSCSCSCSCSCSSCSCS Output pin. OUT |When the load is short circuited and current in excess of the detection current flows to the output pin, the output automatically turns on or off. [= [ep Powerpin 1997-08-21 2/10

INPUT SIGNAL | ' ! | ' H H 1 H ' { ' | OVERHEATING ' ' ' DETECTION i | | H H i DETECTION t ! 14 ! i

1 H , Hi 1 1 A

t 1 ot H 1 1 ' OUTPUT SIGNAL | | fi ' or ft H H ‘CURRENT LIMIT H t DIAGNOSIS OUTPUT | TRUTH TABLE INPUT SIGNAL | OUTPUT SIGNAL |DIAGNOSIS OUTPUT STATE a po ad open po Overheating T_T 1997-08-21 3/10

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Voom | 5S” Supply Voltage Vpp (2)_|_60(Rs= 10, ¢=250ms) voit Voltage Vin putVokage [rue _|_Vin(a) | VoD (y+ 15 (t= 1007s) Diagnosis Output Voltage -0.5~25 [Output Current (| lo | Internally Limited | _A_| Diagnosis Output Current | Ipiag_| 5 | ma | omer Dissipation L=2=C | PO) | 30 Operating Temperature -40~85 fiunetion Temperature | 1 | —-150—~=—S~SYS Storage Temperature -55~150 Lead Temperature /time 275 (5s), 260 (10s) ELECTRICAL CHARACTERISTICS (Tc = -40~85°C, Vpp = 8~18V) TEST CHARACTERISTIC Fsrmeos [See] resrconomon | am | ve | axon CUIT [Current Dissipation | pp | — |Vop=12V, Vin=0 P= ts ma — [Vin = pp = tev. 19 =8A Dasp= f= Tv nput Voltage [Vi [= Wpp=12V, ips t2ma iP — | — | as] v | Input Current ek | — eae sg fata toa On Voltage Vps (on) | — [Vop=12V, lo =8A, Te=25°¢ | — | — | 048] v | [Output Leakage Curent | to. | — |Vop=18V, n= | — | — | 12 | ma | Diagnosis Output, _ = Voltage L” Level] VpL Vpp = 12V, IpL=1mA v Diagnosis Output,,,, _ = aa Vpp = 12V, Te = 25°C Overheating [Temperature] ts | —| _— | 150 | 160 | 200 | °c | Detection [Hysteresis [ats — | — | — | | — [| [open Detection Resistance | Ros | = |Vop=8V———— | 50 | t00 | | switching Time Vop=12V, Ri =3 [02007 — ps | [ore [3 |te=25°¢ [of 30 | — [is | *1 I5(1) Overcurrent detection value when load is short circuited and Viy=“L"—>"H” *2 Is(2) Overcurrent detection value when load current is increased while Vij ="H" 8997-08-21 4/10

o- sv @ Vpp=12V S. 1 lo to <7 vpL© 0 ' pas | TPD10115 ' Cl Fo H [e) sv i rP6@ vin eR ' " <0.4V \\ VoL TEST CIRCUIT 2 Over- current detection J sv @ Vpp=12v ; 10 Es O 1 '8@ ° ' VoL © Cj t os | TPD10115 ' q ilo sv ' Oo Za, v7 vin R i-<0.4v I 0 wann-=nn ==) You TEST CIRCUIT 3 Switching time Vpp=12V Q cu pias o—C] our INPUT WAVEFORM TPD1011S | © Vout vn eo 10% ©) 0 Pc@ vin RL=50 onan nnnnn= 2 12v 90% OUTPUT WAVEFORM Vout 0 10% 1997-08-21 5/10

16 Ipp - Yop Vps(ON) - !o Pee] [ | [ty “CEEEEEE AT > a s ,J LPT Pry | voorrv ef] | | Te = PCCP cna ~ 12 P a oe a | i [upp | s “COC s ne 4 BEE eee s | I77 |] tt i foo - [fli tity 8 Poe ear zg 4 5 [Ty Ty tp yyy ey |/ + +T | | ° [| pet TT TT TT yy yy) o _+—_| art TTT yi tT Tt tt | 0 8 16 24 32 0 2 4 6 8 10 12 14 16 SUPPLY VOLTAGE Vpp (V) OUTPUT CURRENT Io (A) 0s Rps (ON) - Te a0 Rps (ON) - VDD TeHtte “eete] PTTL bare CE 3 | Fs we uw 0.06 go, tT cert TT eT 5 [4 a g a 8 0.04} PTD PEELE) be eR HH 5 es ee atti titty tt LLEPEEEETT ET -80 -40 0 40 80 120 0 4 8 12 16 20 CASE TEMPERATURE Te (°C) SUPPLY VOLTAGE Vpp (V) Ig - Te Vin - Vob 80; 4 ca s LLL ITT TI e§] es ott ttt tty yl oe ee 5 60 > 3 w Li ee sg fit iT7 Tt ttt el BL] {ty yy bof 7 | 2 {| {TT iti ty a 2 5 oa ge. titi tit g [itt ttt ttt 2 [iT iyi tity ey s {i {iT iti t yl a “Lit itT ttt | | oso -40 0 40 80 120 % 4 8 12 16 20 CASE TEMPERATURE Tc (°C) SUPPLY VOLTAGE Vpp (V) 1997-08-21 6/10

04 VoL - Te 00 SWITCHING CHARACTERISTICS

Pe a PORE! an . ro ee sop tht TT P| yeas 2 43 — ELTA TT To ce oe 5 g ELT YT Ty tye gs of tty et yy ee a e Lit iT TT yyy 2 A AK eA ee eee Fd a | ‘ | a LLFTT TTT | A -80 -40 0 40 80 120 0 4 8 12 16 20 CASE TEMPERATURE Tc (°C) SUPPLY VOLTAGE Vpp (V) Rops - Tc Pp - Ta an:) 35 fo EEE ETT ET we | [frst tre ner scat [J 2 a . a ee e SOCORRO NS Eee kd rT TINGLE Zz ott Titra TT tt 2g 0 Nd e “LT TTT PIN TTT yy e |) tt ENE TT] = «|! TTT? rt tt ty o MS] a ee | a ee & ~~ PP Pree 5 2 2 "TTT TT yy Try ee ee ee a es TTTPEPri rrr ey [_fworwour wear swx| [fT ft 28 -40 0 40 80 120 dt — a CASE TEMPERATURE Tc (°C) AMBIENT TEMPERATURE Ta (°C)

100 Rops - Vpb

g HA es | © wt e ETI TTT TT Ty | 2 og TY} it i tt tt oe

2 COON

z2 Ltt T)) AAT se 0 4 8 12 16 20 24 SUPPLY VOLTAGE Vpp (V) PRECAUTION: 1. Since protection for, for example, reverse connection of the battery is not incorporated, provide protection using external circuits. 1997-08-21 7/10

SSIP5-P-1.70A (STL) Unit : mm 10.040.3 3.24015 2,670.2 TT? [E Sh] US ° 2 “| | 8 | a i ( iS | = g UT | 0.933 z 0.8733 VTA 71717 0.53 %6 BY q & al + Weight : 2.2g (Typ.) TOOT 9082 8/1

ZIP5-P-1.70 (LBF) Unit : mm 10.040.3 a meen a ail - Le trite! a | i L_| 1.7, 1.7 8510.5 Weight : 2.2g (Typ.) sss 4997-08-21 9/10

ZIP5-P-1.70A (LBS) Unit : mm 10.040.3 23,210.15 | agrias DEL e] PS 3 5 BAmenr a || / | | 3 a 2 ll I

09 Il | =

47, 47 3.040.5 7.0305 Weight : 2.2g (Typ.) 1997-08-21 10/10