TPCT4204 TOSHIBA | Alldatasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ᶚ) TPCT4204 Lithium Ion Secondary Battery Applications
- Lead(Pb)-Free
- Small footprint due to small and thin package
- Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.)
- High forward transfer admittance: |Yfs| = (25) S (typ.)
- Low leakage current: ISSS = 10 µA (max) (VSS = 30 V)
- Enhancement-model: Vth = 0.5to1.2 V(VSS = 10 V, IS = 200ЖA)
- Common drain Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Source-source voltage VSSS 30 V Gate-source voltage VGSS ±12 V DC (Note 1) I S 6 Source current Pulse (Note 1) I SP 24 A Power dissipation (t = 10s ) (Note 2a,3) P D 1.7 W Power dissipation (t= 10s ) (Note 2b,3) P D 0.51 W Single pulse avalanche energy (Note 4) E AS TBD mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 2a, 5) EAR 0.17 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55to150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. ĞĈęĕĐĕĎ ʲďĨĵīijİĵĮçėĹĬĪĨļĻİĶĵçĭĶĹçėĶľĬĹçĔĖĚčČěçİĵçļĺĬçĶĭçėĹĶĻĬĪĻİĶĵç ĊİĹĪļİĻçĭĶĹçĉĨĻĻĬĹŀçėĨĪIJçʳç čijĨĴĬôĹĬĻĨĹīĨĵĻçĹĬĺİĵĺçĶĭçĜēĀûôĝ÷çĭijĨĴĴĨĩİijİĻŀçĪijĨĺĺçĨĹĬçļĺĬīçİĵç ķĨĪIJĨĮĬĺóįĶľĬĽĬĹóĻįĬŀçĨĹĬçĵĶĻçĵĶĵĪĶĴĩļĺĻİĩijĬõç ĜĺĬçĨçļĵİĻóĭĶĹçĬĿĨĴķijĬçėěĊçěįĬĹĴİĺĻĶĹóľįİĪįçĪĨĵçĺįļĻçĶĭĭçĻįĬçķĶľĬĹç ĺļķķijŀçİĭçĨçĺįĶĹĻôĪİĹĪļİĻçĶĪĪļĹĺõç ĐĭçĻįĬçķĶľĬĹçĺļķķijŀçİĺçĵĶĻçĺįļĻçĶĭĭçĶĵçĻįĬçĶĪĪļĹĹİĵĮçĺįĶĹĻôĪİĹĪļİĻóĨç ijĨĹĮĬçĺįĶĹĻôĪİĹĪļİĻçĪļĹĹĬĵĻçľİijijçĭijĶľçĪĶĵĻİĵļĶļĺijŀóľįİĪįçĴĨŀçĪĨļĺĬç ĻįĬçīĬĽİĪĬçĻĶçĪĨĻĪįçĭİĹĬçĶĹçĺĴĶIJĬõ ç ç Unit: mm ç 0.45 0.45 S 2.53ʶ0.1 3.8±0.1 2.0±0.1 0.6ʶ0.05 0.4ʶ0.1 0.2ʶ0.05 0.85ʶ0.1 0.5+0.04 -0.16 0.14ʶ0.04 0.025 M S 0.05 B B 0.4+0.2 -0.1 1.GATE1 3. SOURCE2 2.GATE2 4. SOURCE 1 JEDEC ― JEITA ― TOSHIBA 2-2S1A Weight: 0.012 g (typ.) Circuit Configuration FET 1 FET2 TENTATIVE 2 3
Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 1 0 s ) ( N o t e 2 a , 3 ) Rth (ch-a) 76 °C/W Thermal resistance, channel to ambient (t = 1 0 s ) ( N o t e 2 b , 3 ) Rth (ch-a) 244 °C/W Marking (Note 6) Note 1: Ensure that the channel temperature does not exceed 150ˆ. Note 2: (a) Device mounted on a glass-epoxy board (b) Device mounted on a glass-epoxy board Note 3: The power dissipation and thermal resistance values are shown for both FETs Note 4: VDD = 24 V,Tch = 25°C (initial),L = mH,R G = 25 Ω,IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature. Note 6: ˓ on lower left of the marking indicates Pin 1. TENTATIVE Lot No. (weekly code) Product-specific code 2 0 4 Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Pin #1 Lot code (year) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b)
Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±10 V, VSS = 0 V (Note 8) ±10 µA Source cut-OFF current ISSS V SS = 30 V, VGS = 0 V (Note 8) 10 µA V (BR) SSS IS = 10 mA, VGS = 0 V (Note 8) 30 Drain-source breakdown voltage V (BR) SSX IS = 10 mA, VGS = −12 V (Note 8) 15 V Gate threshold voltage Vth V SS = 10 V, IS = 200 µA (Note 8) 0.5 1.2 V VGS = 4.0 V, IS = 3 A (Note 7) (18.5) (23) (29.5)Drain-source ON resistance RSS (ON) mΩ Forward transfer admittance |Yfs| V SS = 10 V, IS = 3 A (Note 8) (12.5) (25) S Input capacitance Ciss (1990) Reverse transfer capacitance Crss (150) Output capacitance Coss VSS = 10 V, VGS = 0 V, f = 1 MHz (Note 8) (210) pF Rise time tr TBD Turn-on time ton TBD Fall time tf TBD Switching time Turn-off time toff Duty <= 1%, tw = 10 µs (Note 8) TBD ns Total gate charge Qg TBD Gate-source charge1 Qgs1 VSS ∼− 24 V, VGS = 5 V, IS = 6 A (Note 8) TBD nC Diode (source-source) forward voltage VSSF I SR = 6 A, VGS = 0 V (Note 9) −1.2 V TENTATIVE RL =3.3Ω VSS ∼− 15 V 0 V VGS 5 V 4.7 Ω IS = 3 A VOUT
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