TPCT4202 NSC | Alldatasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium lon Battery Applications . Unit: mm. * Lead(Pb)-Free * Small footprint due to small and thin package = + Low drain-source ON resistance: RSs (ON) =30.5m2 (typ.) bat 2 2h + High forward transfer admittance: |Yfs| = 15S (typ.) 4 Saaare lice + Low leakage current: Isgs = 10 pA (max) (Vps = 30 V) bat Hi ! + Enhancement-mode: Vth = 0.5~1.2 V (Vss = 10 V, Is = 200A) (4 {oacetsl 8) * Common drain 0.6+0.05 , si . og * —EJa0s] Maximum Ratings (Ta = 25°C) nee a 4 tes come fom Tome fm] | ae et a ; [cate-source vorage | Vass | tz? | V| | oasonslbsax01 Baarsto. wears et a) a LGATE 1. 3.SOURCE2 Drain power —_| Single-device value 2.GATE 2_4.SOURCE 1 dissipation | at dual operation 17 JEDEC - eer Feme) | || aoe Note 24 (Note 3) Weight: 0.010 g (typ.) ‘Single pulse avalanche energy . . Peorteramenentivayg| co | we | mt | fraicwcees =m | 6 | | Clreuit Configuration Repetitive avalanche energy 4 3 Single-device value at dual operation Ean 0.17 mJ (Note 2a, 3, 5) Ganconmeewe | ta] mee . a Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 a __ 1 2004-03-05 a
ens ome [om | ss vent | Single-device value at ‘Thermal resistance, channel to ambient i D f-108) (ote 2a) sree | oe | | | Thermal resistance, channel to ambient bik pao at “cw (t= 105) (Note 2b) ~~ Marking (Note 5) Type l l] Note 1: Please use devices oncondition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (b) Device mounted on a glass-epoxy board FR-4 FR-4 (unit: mm) (unit: mm) @ ) Note 3: The power dissipation and thermal resistance values are shown for a sigle device» (During dual operation, power is evenly applied to both devices.) . Note 4: Vpp = 24 V, Tch = 25°C (initial), L= 1.0 mH, Ra = 25 Q, lan=6A Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: © on lower right of the marking indicates Pin 1. vs SSS 2 2004-03-05 an
Electrical Characteristics (Ta = 25°C) ee [Gatwieakagecurent——|—itass— [Vas-si0vvessov [| — | — | ato | a | [Souce cu-orFeunent | tsss—[Vss-S0viVos-ov | — | — [| 10 | va | Sewer sue weskiownvotsat_[Wamesx |= tomavos--av | = | — [— | * [Gato tvesholdvetage |My [Vs=toviig=200 wa | os | — | 2 | v | Source -source ON resistance Mos-aovis-3a | 26 | a2 | oe | Mes-45V.is-3A | | sos | oe | [Forward wanctoradmitence | —Mwl__[vee-toViis-9a | 75 | ts | — | s | Jinputcapectance | Os | — | 150 [ — | [Reverse wanstercepactance | One__|Vas~10V.Vas-ov.t~1MHe | — | 180 | — | oF — felts] 5V Ise 3 well pero (Te [| Switching time =] 8 ea Vss = 15V aie | = | aoe (gate-source plus gate-drain) [aatesoucocherget | uen_—*(V8ST MM Vas~SIn-eA fg | — | [Gate- source miler) charge [ae | (-[e«[-| Source- Source Ratings and Characteristics (Ta = 25°C) fat ee [Soucoreversecurent [Puse Note s)| sap [| | | | oe | [Forward votiage diode) | esr isn=@AVos-ov [| — | — [2] v | a 3 2004-03-05 a
RESTRICTIONS ON PRODUCT USE c20619EAA * The information contained herein is subject to change without notice. ~~ . * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents.or other rights of the third parties which may result from its use. No license is granted by implication or otherwise:under any patent or patent rightsof TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can matfunction or fail due to their inherent electricat sensitivity and vulnerability to physica stress.; It is the responsibility of the buyer, when utilizing TOSHIBA products, tocomply with the standards of “ safety ‘in making a safe design for the entire system, and to avoid situations in which a matfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the ‘Handling Guide for Semiconductor Devices? or “TOSHIBA Semiconductor Reliability Handbook” etc... * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or relicbility or a matfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage’). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstreamproducts which are prohibited to be produced and sold, under any law and regulations. eee 4 2004-03-05 a