TPCT4201 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium lon Battery Applications . Unit: mm. + Lead(Pb)-Free * Small footprint due to small and thin package = * Low drain-source ON resistance: RSS (ON) =25.5mQ (typ.) bay—tt 3 2q + High forward transfer admittance: | Yfs| =15 S (typ.) 4-4 pre 20203 * Low leakage current: Isss = 10 pA (max) (Vps = 20 V) ba i ! * Enhancement-mode: Vth = 0.5~1.2 V (Vgs = 10 V, Is = 200 pA) E {Jaca 6) * Common drain 284.005 { sk Maximum Ratings (Ta = 25°C) ousoea, Close] [oe om [om [=] fe oe focoroarowme | ves | = |v | ?-— le lel [owes] [| ¢ —| [Puce Woon] tse |e LGATE 1. 3SOURCE2 Drain power | Single-device value 2.GATE 2 4.SOURCE 1 iespation at dual operation 7 w JEDEC - = 105) (Note 2a) Wote 3) JEITA = ee Fem] | |e rt = 105) ight: Note 2b) (Note 3) Weight: 0.010 g (typ.) ‘Single pulse avalanche energy Peerueninentiayy| os | we | | [rawereanen (| _bn |e | A | — Clteuit Configuration Repetitive avalanche energy 4 3 Single-device value at dual operation 0.17 m - (Note 2a, 3, 5) _ [Semaine | ta | ee Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) please refer to the next page. This transistor is an electrostatic sensitive devico. Please handle with caution. 1 2 a _ 1 2004-03-05

Penns oom [oe | ss Single-device value at Thermal resistance, channel to ambient s “ be t08) (Note 2a) Thermal resistance, channel to ambient | ogle-dovice value at “ow (t= 105) (Note 2b) ole 3) Marking (Note 5) Type l l] Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (b) Device mounted on a glass-epoxy board FR-4 FR4 (unit: mm) (unit: mm) (a) (b) Note 3: The power dissipation and thermal resistance values are shown for a ingle device : (During dual operation, power is evenly applied to both devices.) . Note 4: Vpp = 16 V, Teh = 25°C (initial), L= 1.0 mH, Rg = 25 Q laR=6A Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: © on lower right of the marking indicates Pin 1. cas —_—— eee 2 2004-03-05 a

Electrical Characteristics (Ta = 25°C) [owns femme [woe fo foe [Gatoleckagecurent | toss [Vas-2t0V.ves-ov | — | = | ato | oa | [SoucocutorFourent | iss [Vss-20vivos-ov | — | — | 10 | wa | Souce suc enkiownvetser _[Wameox fis= @mavos=-ev |e | — | — | * [Gato treshordvotege | Vn [ss 10Vig-200a | os | — | 12 |v | pes-asviiesa | = | a | | Source -source ON resistance Wes-4ovis-3a | at | a7 | ee | Mes=45viis-3A | 19 | ass | at | [Forward wanctoradmittance | —sYwl_—[vee-toviis-9A | 75 | is | — | s | [ = | 0 [ — | [Reverse wanclor capacitance | Gme__—([Vas~10V.Vas-ov.t-1mHz | — | ie | — | Be 5V Ise 3A won ete [= Te [=| ‘Switching time 7 be ee [| Elh EE i Vss = 10V Eee [| aoe (gate-source plus gate -drain) [cate-sourcecherset | ue _—*([Ves tM Mas~SMIn-e@A [J 4 [| ne [cate- source (miler) charge | ue | P-[Ts«[- | Source- Source Ratings and Characteristics (Ta 25°C) dd [Soucereverse current [Pulse ote) sap | | | | | A [Ferwardvotage toe) | esr isn-eAVos-ov | — | — [12] v | a 3 2004-03-05

RESTRICTIONS ON PRODUCT USE c20619EAA * The information contained herein is subject to change without notice. at * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. ~ * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilzing TOSHIBA products, to comply with the standards of . “safety in making a safe’design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to propety. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the ‘Handling Guide for Semiconductor Devices; or “TOSHIBA Semiconductor Reliability Handbook’ etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a matfunction or failure of which may cause lossof human life or bodily injury (Unintended Usag@’). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream productswhich are prohibited to be produced and sold, under any law and regulations. oo, 4 2004-03-05 a