TPCS8205_07 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor S ilicon N Chann el MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Small footprint due to small and thin package z Low drain-source ON resistance: R DS (ON) = 30 mΩ (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) z Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20kΩ) V DGR 20 V Gate-source voltage VGSS ±12 V D C (Note 1) I D 5 Drain curren Pulse (Note 1) I DP 20 A Single-device operation (Note 3a) PD (1) 1.1 Drain power dissipation (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) PD(2) 0.5 W Single-device operation (Note 3a) PD (1) 0.6 Drain power dissipation (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.35 W Single pulse avalanche energy (Note 4) E AS 32.5 mJ Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) E AR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (N ote 3b), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e .g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration

Characteristics Symbol Max Unit Single-device operation (Note 3a) Rth (ch-a) (1) 114 Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) R th (ch-a) (2) 250 Single-device operation (Note 3a) Rth (ch-a) (1) 208 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) R th (ch-a) (2) 357 °C/W Marking (Note 6) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 16 V, Tch = 25°C (Initiaal), L = 1.0 mH, RG = 25 Ω, IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: ○ on lower right of the marking indicates Pin 1. FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) S8205 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS V DS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 V RDS (ON) V GS = 2.0 V, ID = 3.5 A ⎯ 60 90 RDS (ON) V GS = 2.5 V, ID = 3.5 A ⎯ 40 60 Drain-source ON resistance RDS (ON) V GS = 4 V, ID = 4 A ⎯ 30 45 mΩ Forward transfer admittance |Yfs| V DS = 10 V, ID = 2.5 A 5 10 ⎯ S Input capacitance Ciss ⎯ 760 ⎯ pF Reverse transfer capacitance Crss ⎯ 110 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 130 ⎯ pF Rise time tr ⎯ 7 ⎯ Turn-ON time ton ⎯ 13 ⎯ Fall time tf ⎯ 13 ⎯ Switching time Turn-OFF time t off ⎯ 49 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 11 ⎯ nC Gate-source charge Qgs ⎯ 8 ⎯ nC Gate-drain (“miller”) charge Qgd VDD ≈ 16 V, VGS = 5 V, ID = 5 A ⎯ 3 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP — — — 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V — — −1.2 V

AMBIENT TEMPERATURE Ta ( °C) PD – Ta DRAIN POWER DISSIPATION P D (W) 0.4 0.8 1.2 1.6 40 80 200160 120 (1) (2) (3) (4) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s

DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (A) SAFE OPERATING AREA 0.01 0.03 0.1 0.3 1 3 10 100 30 0.01 0.03 0.05 0.1 0.3 0.5 100 * SINGLE PULSE T a = 25°C Curves must be derated linearly with increase in temperature. ID max (PULSE) * 10 ms * 1 ms * VDSS max SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.