TPCP8404

TPCP8404 KEXIN | Alldatasheet

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www.kexin.com.cn 1 MOSFETSMD Type Silicon P,N Channel MOSFET TPCP8404 Ƶ Features ƽ Low drain-source ON-resistance: P Channel RDS(ON) = 38m¡(typ.)(VGS=-10V) N Channel RDS(ON) = 38mȍ(typ.)(VGS=10V) ƽ High forward transfer admittance: P Channel |Yfs| = 7.3S (typ.) N Channel |Yfs| = 8S (typ.) ƽ Low leakage current: P Channel IDSS = -10ȝA(max)(VDS=-30V) N Channel IDSS = 10ȝA(max)(VDS=30V) ƽ Enhancement mode: P Channel Vth = -0.8 to -2.0 V (VDS = -10V, ID = -1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10V, ID = 1mA) Characteristics Symbol Rating Unit Drain-source voltage V DSS 30 30 V Drain-gate voltage (RGS = 20 k:)V DGR 30 30 V Gate-source voltage V GSS ±20 ±20 V DC (Note 1) I D 44Drain current Pulse (Note 1) I DP 16 16 A Single-device operation (Note 3a) PD( 1 ) 1.48 1.48Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD( 2 ) 1.23 1.23 Single-device operation (Note 3a) PD( 1 ) 0.58 0.58Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) PD( 2 ) 0.36 0.36 W Single pulse avalanche energy (Note 4) EAS 2.6 2.6 mJ Avalanche current I AR 22 A Repetitive avalanche energy Single-device value at dual operation )5,b3,a2etoN( EAR 0.009 mJ Channel temperature T ch 150 °C Storage temperature range T stg 55 to 150 °C Note: For Notes 1 to 5, refer to the next page. Ƶ Absolute Maximum Ratings Ta = 25ć Circuit Configuration Marking (Note 6) 8 7 6 5 1 2 3 4 8404 1 2 3 4 8 7 6 5 Lot No. Unit: mm 2-3V1G 5㧚Drain2 6㧚Drain2 7㧚Drain1 8㧚Drain1 1㧚Source1 2㧚Gate1 3㧚Source2 4㧚Gate2 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 2.4±0.1 0.475 0.65 2.8±0.1 A0.05 M 2.9±0.1 0.8±0.05 0.17±0.02 B B0.05 M A S0.025S 1.12+0.13 -0.12 0.28+0.1 -0.11

www.kexin.com.cn2 MOSFETSMD Type Characteristics Symbol Max Unit Single-device operation (Note 3a) Rth (ch-a) (1) 84.5Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 101.6 °C/W Single-device operation (Note 3a) Rth (ch-a) (1) 215.5Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 347.2 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: P Channel: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 :, IAR = 2A N Channel: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 :, IAR = 2A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6:٨on the lower left of the marking indicates Pin 1. Silicon P,N Channel MOSFET TPCP8404 Ƶ Thermal Characteristics

www.kexin.com.cn 3 MOSFETSMD Type Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS VGS =± 20 V, VDS = 0 V ±100 nA Drain cut-off current I DSS VDS = 30 V, VGS = 0 V 10 PA V (BR) DSS ID = 10 mA, VGS = 0 V 30 Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = 20 V 10 V Gate threshold voltage V th VDS = 10 V, ID = 1 mA 0.8 2.0 V VGS = 4.5 V, ID = 2.0 A 80 Drain-source ON resistance R DS (ON) VGS = 10 V, ID = 2.0 A 50 Forward transfer admittance |Y fs|V DS = 10 V, ID = 2.0 A 3.7 S Input capacitance C iss 510 Reverse transfer capacitance C rss 110 Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz 170 pF Rise time t r 11 Turn-on time t on 20 Fall time t f 37 Switching time Turn-off time t off Duty d 1%, tw = 10 Ps 99 ns Total gate charge (gate-source plus gate-drain) Qg 13 Gate-source charge 1 Q gs1 1.7 Gate-drain (“miller”) charge Q gd VDD | 24 V, VGS = 10 V, ID = 4 A 4.6 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP 16 A Forward voltage (diode) V DSF IDR = 4 A, VGS = 0 V 1.2 V RL = 7.5: VDD | 15 V 10 V 0 V 4.7 : ID = 2 A VOUT Silicon P,N Channel MOSFET TPCP8404 Ƶ Electrical Characteristics Ta = 25ć(P-ch)

www.kexin.com.cn4 MOSFETSMD Type Silicon P,N Channel MOSFET TPCP8404 Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS VGS =± 20 V, VDS = 0 V ±100 nA Drain cut-off current I DSS VDS = 30 V, VGS = 0 V 10 PA V (BR) DSS ID = 10 mA, VGS = 0 V 30Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = 20 V 10 V Gate threshold voltage V th VDS = 10 V, ID = 1 mA 1.3 2.5 V VGS = 4.5 V, ID = 2 A 80 Drain-source ON resistance R DS (ON) VGS = 10 V, ID = 2 A 50 Forward transfer admittance |Y fs|V DS = 10 V, ID = 2 A 4 S Input capacitance C iss 190 Reverse transfer capacitance C rss 45 Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz pF Rise time t r 4.5 Turn-on time t on 9.0 Fall time t f 3.0 Switching time Turn-off time t off Duty d 1%, tw = 10 Ps 12 ns Total gate charge (gate-source plus gate-drain) Qg 4.6 Gate-source charge 1 Q gs1 0.7 Gate-drain (“miller”) charge Q gd VDD | 24 V, VGS = 10 V, ID = 4 A 1.4 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP 16 A Forward voltage (diode) V DSF IDR = 4 A, VGS = 0 V 1.2 V RL =7.5: VDD | 15 V 0 V VGS 10 V 4.7 : ID = 2 A VOUT Ƶ Electrical Characteristics Ta = 25ć(N-ch)

www.kexin.com.cn 5 MOSFETSMD Type Silicon P,N Channel MOSFET TPCP8404 0.1 1 100 100 1000 VGS = 4.5 V 100 Ta = 55°C 0.1 1 10 100 0.1 100 8 10 0.5 1.5 ID = 4A 0 2 4 6 Ta = 55°C 100 0 1 2 3 54 VGS = 2.4 V 2.6 3.6 3.4 3.2 2.8 4.5 0 1 2 3 4 5 VGS = 2.4 V 3.4 2.6 2.8 3.6 3.2 4.5 0 0.2 0.4 0.6 0.8 1 Drain current I D (A) RDS (ON) – ID Drainsource ON-resistance RDS (ON) ( m :) Gatesource voltage V GS (V) ID – VGS Drain current I D (A) Drainsource voltage V DS (V) Gatesource voltage V GS (V) VDS – VGS Drainsource voltage V DS ( V ) ID – VDS Drain current I D (A) Drainsource voltage V DS (V) ID – VDS Drain current I D (A) Drain current I D (A) |Yfs| – ID Forward transfer admittance |Yfs| (S) Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta= 25͠ Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Ƶ Typical Characterisitics (P-ch)

www.kexin.com.cn6 MOSFETSMD Type 048 VDD = 24 V VDS VGS 16 20 VDD = 24 V 0.4 1.2 1.6 2.0 80 40 0 40 80 120 160 0.8 0.1 100 10000 1 10 100 Ciss Coss Crss 1000 0.1 0.2 0.8 1 VGS = 0V 4.5 2.14.0 0.6 VGS = 10 V VGS = 4.5 V ID = 1, 2, 4A 100 16040 0 40 80 120 ID = 1, 2A 2.0 0.8 051050 0.4 1.2 1.6 200 (1) (2) (3) (4) 100 Drainsource voltage V DS (V) Capacitance – VDS Capacitance C (pF) Common source VGS = 0V f = 1 MHz Ta = 25°C Ambient temperature Ta (°C) RDS (ON) – Ta Drainsource ON-resistance RDS (ON) (m :) Drainsource voltage V DS (V) IDR – VDS Drain reverse current I DR (A)Gate threshold voltage V th (V) Ambient temperature Ta (°C) Vth – Ta Common source VDS = 10 V ID = 1m A Pulse test Common source Ta = 25°C Pulse test Gatesource voltage V GS (V) Total gate charge Q g (nC) Dynamic input/output characteristics Drain-source voltage V DS (V) Common source ID = 4A Ta = 25°C Pulse test Drain power dissipation P D ( W ) Ambient temperature Ta (°C) PD – Ta Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation )a3etoN( (4) Single-device value at dual operation (Note 3b) t = 5s Common source Pulse test Ƶ Typical Characterisitics (P-ch) Silicon P,N Channel MOSFET TPCP8404

www.kexin.com.cn 7 MOSFETSMD Type 0.1 100 101 100 0.1 10 ms * 1m s * VDSS max0.01 0.001 100 1000 0.01 0.1 1 10 100 1000 (1) (2) (3) (4) Drainsource voltage V DS (V) Safe operating area Drain current I D (A) ID max (Pulse) * rth – tw Pulse width t w (s) Single pulse Transient thermal impedance r th (͠/W) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Ƶ Typical Characterisitics (P-ch) Silicon P,N Channel MOSFET TPCP8404

www.kexin.com.cn8 MOSFETSMD Type 0.1 1 100 1000 100 VGS = 4.5 V 0.1 1000 0.1 100 1 10 25100 Ta = 55°C 100 ID = 4A2 08 1 0 246 2.0 1.5 0.5 Ta = 55°C 25100 04 5 123 ID – VDS VGS = 3V 3.8 3.4 3.6 3.2 0 4 51 2 3 ID – VDS VGS = 2.8 V 3.4 4.5 3.8 3.6 8 5 3.2 Drain current I D (A) RDS (ON) – ID Drainsource ON-resistance RDS (ON) ( m :) Gatesource voltage V GS (V) ID – VGS Drain current I D (A) Common source VDS = 10 V Pulse test Drainsource voltage V DS (V) Gate-source voltage V GS (V) VDS – VGS Drainsource voltage V DS ( V ) Drain current I D (A) Common source Ta = 25°C Pulse test Drainsource voltage V DS (V) Drain current I D (A) Drain current I D (A) |Yfs| – ID Forward transfer admittance (S) Common source Ta = 25°C Pulse test Common source Ta= 25͠ Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test |Yfs| Ƶ Typical Characterisitics (N-ch) Silicon P,N Channel MOSFET TPCP8404

www.kexin.com.cn 9 MOSFETSMD Type 02 4 VDD = 24 V VDS VGS 6 8 VDD = 6V 2.0 0.8 0 25 50 125 150 0.4 1.2 1.6 200 (1) (2) (3) (4) 75 100 175 80 40 0 40 80 120 160 0.1 100 1000 1 10 100 Ciss Coss Crss 0.1 0.2 0.6 0.8 1.2 VGS = 0V 4.5 3 0.4 1.016040 0 40 80 12080 100 VGS = 10 V VGS = 4.5 V ID = 4, 2, 1 A ID = 4A Drainsource voltage V DS (V) Capacitance – VDS Capacitance C (pF) Common source VGS = 0V f = 1 MHz Ta = 25°C Ambient temperature Ta (°C) RDS (ON) – Ta Drainsource ON-resistance RDS (ON) ( m :) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A)Gate threshold voltage V th (V) Ambient temperature Ta (°C) Vth – Ta Common source VDS = 10 V ID = 1m A Pulse test Common source Pulse test Common source Ta = 25°C Pulse test Gatesource voltage V GS ( V ) Total gate charge Q g (nC) Dynamic input/output characteristics Drainsource voltage V DS (V) Common source ID = 4A Ta = 25°C Pulse test Drain power dissipation P D ( W ) Ambient temperature Ta (°C) PD – Ta Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation )a3etoN( (4) Single-device value at dual operation (Note 3b) t = 5s Ƶ Typical Characterisitics (N-ch) Silicon P,N Channel MOSFET TPCP8404

www.kexin.com.cn10 MOSFETSMD Type 0.1 100 101 100 10 ms * 1m s * VDSS max 0.01 0.01 0.001 100 1000 0.01 0.1 1 10 100 1000 (1) (2) (3) (4) rth – tw Pulse width t w (s) Single pulse Transient thermal impedance r th (͠/W) Drainsource voltage V DS (V) Safe operating area ID max (Pulse) * Drain current I D (A) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Ƶ Typical Characterisitics (N-ch) Silicon P,N Channel MOSFET TPCP8404