TPCP8001-H

TPCP8001-H TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOS III) TPCP8001-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications

• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: Q SW = 3.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 7.2 Drain current Pulsed (Note 1) I DP 28.8 A Drain power dissipation (t = 5 s) (Note 2a) PD 1.68 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.84 W Single-pulse avalanche energy (Note 3) EAS 33.6 mJ Avalanche current IAR 7.2 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.066 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3V1K Weight: 0.017 g (typ.) Circuit Configuration Marking (Note 5) 1 2 3 4 8 7 6 5 8 7 6 5 1 2 3 4 8001H Lot No. 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 2.4±0.1 0.475 0.65 2.8±0.1 A 0.05 M 2.9±0.1 0.8±0.05 0.17±0.02 B B0.05 M A S 0.025S 1.12+0.13 -0.12 0.28+0.1 -0.111．Source 5．Drain 2．Source 6 ．Drain 3．Source 7．Drain 4．Gate 8 ．Drain

Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 74.4 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) R th (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a ) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.2A Note 4: Repetitive rating: pulse widt h limited by max channel temperature Note 5: ● on the lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 3.6 A ⎯ 19 25 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 3.6 A ⎯ 13 16 mΩ Forward transfer admittance |Yfs| V DS = 10 V, ID = 3.6 A 8 16 ⎯ S Input capacitance Ciss ⎯ 640 ⎯ Reverse transfer capacitance Crss ⎯ 75 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 300 ⎯ pF Rise time tr ⎯ 4 ⎯ Turn-on time ton ⎯ 8 ⎯ Fall time tf ⎯ 4 ⎯ Switching time Turn-off time t off Duty < = 1%, tw = 10 μs ⎯ 18 ⎯ ns VDD ∼ − 24 V, VGS = 10 V, ID = 7.2 A ⎯ 11 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 5 V, ID = 7.2 A ⎯ 6.3 ⎯ Gate-source charge 1 Qgs1 ⎯ 2.2 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 2.6 ⎯ Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 7.2 A ⎯ 3.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 28.8 A Forward voltage (diode) VDSF I DR = 7.2 A, VGS = 0 V ⎯ ⎯ −1.2 V RL =4.16Ω VDD ∼ − 15 V 0 V VGS 10 V 4.7 Ω ID = 3.6 A VOUT

VGS = 4.5 V 0.1 100 0.1 1 100 10 25°C 100°C Ta = −55°C 0.6 0.8 0 4 6 8 10 0.4 0.2 ID = 7.2 A 3.6 1.8 0 1 2 3 Ta = −55°C 25°C 100°C 2.4 0.40 2 0.8 1.2 1.6 VGS = 2.8 V 3.3 3.4 3.1 3.5 10 4 3.2 3.0 2.9 0.4 0 2 0.8 1.2 1.6 VGS = 2.8 V 3.4 3.2 3.5 2.9 3.0 4 3.1 3.3 2.4 Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Common source Ta = 25°C Pulse test Gate-source voltage V GS ( V ) ID – VGS Drain current I D (A) Drain-source voltage V DS (V) Gate-source voltage V GS ( V ) VDS – VGS Drain current I D (A) RDS (ON) – ID Drain-source ON-resistance RDS (ON) ( m Ω) Drain current I D (A) ⎪Yfs⎪ – ID Forward transfer admittance |Y fs| (S) Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test

Total gate charge Q g ( n C ) 8 12 4 50 20 VDD = 6 V VDS 24 V 12 V 1.2 0 50 100 150 1.6 200 0.8 0.4 (1) (2) 0.5 1.5 −80 −40 0 40 80 120 160 1.0 2.5 2.0 0.1 100 1000 10000 1 10 100 Ciss Coss Crss −0.2 100 VGS = 0 V 4.5 −1.2160 −40 0 40 80 120 −80 VGS = 4.5 V 10 V ID = 1.8,3.6,7.2 A Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( m Ω) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Gate threshold voltage V th (V) Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta ( °C) PD – Ta Drain power dissipation P D (W) Gate-source voltage V GS ( V ) Dynamic input/output characteristics Drain-source voltage V DS (V) (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) ｔ＝5s Common source Ta = 25°C Pulse test Common source Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = 10 V ID = 1 mA Pulse test Common source ID = 7.2 A Ta = 25°C Pulse test

0.001 100 1000 0.01 0.1 1 10 100 1000 0.1 (1) (2) rth – tw Pulse width t w (s) Transient thermal impedance r th ( ° C / W ) Safe operating area Drain-source voltage V DS (V) Drain current I D (A) ID max (Pulse) * 10 ms * Single - pulse * Single - pulse Ta = 25°C Curves must be derated linearl y with increase in temperature. (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) 0.1 100 1 10 100 0.1 VDSS max t =1 ms *

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
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