TPCM8001-H TOSHIBA | Alldatasheet
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+ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U -MOSIII) TPCM8001-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
- Small footprint due to small and thin package
- High speed switching
- Small gate charge: Q g =19 nC (typ.)
- Low drain-source ON resistance : RDS (ON) = 7 mO (typ.)
- High forward transfer admittance: |Y fs| =36 S (typ.)
- Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
- Enhancement mode : Vth = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 20 Drain current Pulsed (Note 1) IDP 60 A Drain power dissipation (Tc=25) PD TBD W Drain power dissipation (t = 10 s) (Note 2a) PD TBD W Drain power dissipation (t = 10 s) (Note 2b) PD TBD W Single pulse avalanche energy (Note 3) EAS TBD mJ Avalanche current IAR TBD A Repetitive avalanche energy (Tc=25 ) (Note 4) EAR TBD mJ Channel temperature Tch 150 °C Storage temperature range Tstg − 55 to 150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transist or is an electrostatic sensitive device. Please handle with caution. Unit: mm 0.5 4.65 0.8 0.25 3.65 0.551 4 3.5 0.75±0.05 0.156 3.9MAX 0.8 1.05 2.7 0.6 2.2 1 4 JEDEC ? JEITA ? TOSHIBA Weight: g (typ.) Circuit Configuration 8 6 1 2 3 7 5 1,2,3FSOURCE 4FGATE 5,6,7,8FDRAIN
Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc=25 ) Rth (ch-c) TBD °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) TBD °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) TBD °C/W Marking (Note 5) Note 1: Please use devices on condition that the channel temperature is below 150 °C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass -epoxy board (b) Note 3: VDD = 24 VC T ch = 25°C (initial)C L = mH C R G = 25 Ω C I AR = A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: Type (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of ye ar, continues up to 52 or 53) Year of manufacture (One low -order digits of calendar year) Lot No.
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = − 20 V 15 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 2.3 V VGS = 4.5 V, ID = 10 A 10 14 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 10 A 7 9.5 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 18 36 S Input capacitance Ciss 1130 Reverse transfer capacitance Crss 120 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 480 pF Rise time tr 2.5 Turn -ON time ton 9 Fall time tf 3 Switching time Turn -OFF time toff Duty ns VDD ∼ − 24 V, VGS = 10 V, ID = 20 A 19 Total gate charge (gate-source plus gate -drain) Qg VDD ∼ − 24 V, VGS = 5 V, ID = 20 A 11 Gate-source charge 1 Qgs1 3.9 Gate-drain (“miller”) charge Qgd 4.0 Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 20 A 6.0 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1 ) IDRP 60 A Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V − 1.2 V RL = 1.5Ω VDD ∼ − 15 V 0 V VGS 10 V 4.7 Ω ID = 10A VOUT
- The information contained herein is subject to change without notice.
- The informati on contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by imp lication or otherwise under any patent or patent rights of TOSHIBA or others.
- TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inher ent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA product s could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most rece nt TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “ Handling Guide for Semiconductor Devices, ” or “TOSHIBA Semiconductor Reliability Handbook” etc..
- The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( “ Unintended Usage ”). Unintended Usage include atomic energy control instruments, airplane or spaceship instrum ents, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer ’s own risk.
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