TPCF8B01 TOSHIBA | Alldatasheet
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TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U -MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications
- Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.)
- High forward transfer admittance: |Yfs| = 4.7 S (typ.)
- Low leakage current: IDSS = −10 ìA (max) (VDS = −20 V)
- Enhancement-model: Vth = −0.5 to −1.2 V(VDS =−10 V, ID = −200 ìA)
- Low forward voltage: VFM = 0.46V(typ.) Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ ) VDGR −20 V Gate-source voltage VGSS ±8 V DC (Note 1) ID −2.7 Drain current Pulse (Note 1) IDP −10.8 A Single pulse avalanche energy (Note 4) EAS 1.2 mJ Avalanche current IAR −1.35 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ SBD (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current (Note 2a, 6) IF(AV) 1.0 A Peak one cycle surge forward current (non-repetitive) IFSM 7(50Hz) A Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Symbol Rating Unit Single-device operation (Note 3a) PD (1) 1.35 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 1.12 Single-device operation (Note 3a) PD (1) 0.53 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.33 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page. Unit: mm JEDEC JEITA TOSHIBA Weight: 0.011 g (typ.) Circuit Configuration Marking (Note 7) F8A 1. Anode 5. Drain 2. Anode 6. Drain 3.Source 7. Cathode 4. Gate 8. Cathode 1 2 3 4 8 7 6 5
Thermal Characteristics for MOSFET and SBD Characteristics Symbol Max Unit Single-device operation (Note 3a) Rth (ch-a) (1) 92.6 Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 111.6 °C/W Single-device operation (Note 3a) Rth (ch-a) (1) 235.8 Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 378.8 °C/W This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω , IAR = −1.35 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. Note 6: Rectangular waveform (α =180o), VR =15V. Note 7: Black round marking “” locates on the left lower side of parts number marking “F8A” indicates terminal No. 1. FR-4 25.4 × 25.4 × 0.8 (PÊ: mm) (b) FR-4 25.4 × 25.4 × 0.8 (PÊt: mm) (a) 25.4 25.4
Electrical Characteristics (Ta = 25°C) MOSFET Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ±10 µA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −20 Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 8V −12 V Gate threshold voltage Vth VDS = −10 V, ID = −200 µA −0.5 −1.2 V RDS (ON) VGS = −1.8 V, ID = −0.7 A 215 300 RDS (ON) VGS = −2.5 V, ID = −1.4A 110 160 Drain-source ON resistance RDS (ON) VGS = −4.5 V, ID = −1.4 A 72 110 mΩ Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.4 A 2.4 4.7 S Input capacitance Ciss 470 Reverse transfer capacitance Crss 70 Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz 80 pF Rise time tr 5 Turn-on time ton 9 Fall time tf 8 Switching time Turn-off time toff Duty ns Total gate charge (gate-source plus gate-drain) Qg 6 Gate-source charge Qgs 4 Gate-drain (“miller”) charge Qgd VDD ID = −2.7 A 2 nC MOSFET Source-Drain Ratings and Characteristics Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP -10.8 A Forward voltage (diode) VDSF IDR = −2.7 A, VGS = 0 V -1.2 V SBD Characteristics Symbol Test Condition Min Typ. Max Unit VFM(1) IFM = 0.7 A 0.43 V Peak forward voltage VFM(2) IFM = 1.0 A 0.46 0.49 V Repetitive peak reverse current IRRM VRRM = 20 V 50 µA Junction capacitance Cj VR = 10 V, f = 1 MHz 54 pF RL = 7.14 Ω VDD ∼ − −10 V −5 V VGS 0 V 4.7 Ω ID = −1.4 A VOUT
- TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specifie d operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices, ” or “TOSHIBA Semiconductor Reliability Handbook” etc..
- The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neithe r intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( “Unintended Usage ”). Unintended Usage include atomic energy co ntrol instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
- The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
- The information contained herein is subject to change without notice . 00707EAARESTRICTIONS ON PRODUCT USE