TPCF8201

TPCF8201_07 TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

TOSHIBA Field Effect Transistor Silicon N Chann el MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Portable Equipment Applications

• Low drain-source ON resistance: R DS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
• Enhancement-mode: V th = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) V DGR 20 V Gate-source voltage VGSS ±12 V DC (Note 1) I D 3 Drain current Pulse (Note 1) I DP 12 A Single-device operation (Note 3a) PD (1) 1.35 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) P D (2) 1.12 Single-device operation (Note 3a) P D (1) 0.53 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) P D (2) 0.33 W Single pulse avalanche energy (Note 4) E AS 1.46 mJ Avalanche current IAR 1.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: For Notes 1 to 6, refer to the next page. Using continuously under heavy loads (e .g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) Circuit Configuration 1 2 3 4 8 7 6 5

Characteristics Symbol Max Unit Single-device operation (Note 3a) Rth (ch-a) (1) 92.6Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) R th (ch-a) (2) 111.6 °C/W Single-device operation (Note 3a) R th (ch-a) (1) 235.8Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) R th (ch-a) (2) 378.8 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: V DD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 1.5 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature Note 6: “●” on the lower left of the marking indicates Pin 1. FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) 25.4 25.4 Part No. (or abbreviation code) F4A A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS V DS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = -12 V 8 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 V RDS (ON) V GS = 2.0 V, ID = 1.5 A ⎯ 62 100 RDS (ON) V GS = 2.5 V, ID = 1.5 A ⎯ 50 66 Drain-source ON resistance RDS (ON) V GS = 4.5 V, ID = 1.5 A ⎯ 38 49 mΩ Forward transfer admittance |Yfs| V DS = 10 V, ID = 1.5 A 2.7 5.4 ⎯ S Input capacitance Ciss ⎯ 590 ⎯ Reverse transfer capacitance Crss ⎯ 70 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 85 ⎯ pF Rise time tr ⎯ 3.0 ⎯ Turn-on time ton ⎯ 7.5 ⎯ Fall time tf ⎯ 4.4 ⎯ Switching time Turn-off time toff Duty ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 7.5 ⎯ Gate-source charge1 Qgs1 ⎯ 1.3 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼ − 16 V, VGS = 5 V, ID = 3.0 A ⎯ 2.1 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 12 A Forward voltage (diode) VDSF IDR = 3.0 A, VGS = 0 V ⎯ ⎯ -1.2 V RL = 0.67Ω VDD ∼ − 10 V 0 V VGS 5 V 4.7 Ω ID = 1.5 A

Drain-source voltage V DS ( V ) ID – VDS Drain current I D (A) Drain-source voltage V DS ( V ) Drain current I D ( A ) ID – VDS 0 0.2 1.7 0.4 0.6 0.8 VGS = 1.4 V 1.5 1.6 1.8 5 1.9 2 10 Common source Ta = 25°C Pulse test 0 3 4 5 VGS = 1.4V 1.5 1.6 1.7 2.1 10 3 1.9 1.8 2 1 Common source Ta = 25°C Pulse test ID – VGS Gate-source voltage V GS ( V ) Drain current ID (A) 0 1 2 3 4 5 Ta = −55°C 100 Common source VDS = 10 V Pulse test Drain-source voltage V DS (V) VDS – VGS Gate-source voltage VGS ( V ) 0.4 0.6 0.8 ID = 3 A 2 4 6 8 10 0.75 1.50.2 Common source Ta = 25℃ Pulse test Forward transfer admittance ⎪Yfs⎪ (S) Drain current I D (A) ⎪Yfs⎪ – ID 100 0.1 1 10 100 Ta = −55°C Common source VDS = 10 V Pulse test Drain-source ON resistance RDS (ON) (m Ω) Drain current I D (A) RDS (ON) – ID 0.1 1 10 100 1000 VGS = 4.5V 2.0 2.5 Common source Ta = 25°C Pulse test

Drain-source ON resistance RDS (ON) (m Ω) Ambient temperature Ta (°C) RDS (ON) – Ta 160 −40 0 40 80 120 −80 120 100 ID = 3A,1.5A,0.75A VGS = 2.0 V VGS = 4.5 V ID = 3A,1.5A,0.75A VGS = 2.5 V ID = 1.5A,0.75A ID = 3A Common source Pulse test IDR – VDS Drain reverse current I DR (A) Drain-source voltage V DS (V) 0.1 −0.4 0.3 0.5 −0.8 −1.2 VGS = 0 V 2.5 2.0 Common source Ta = 25°C Pulse test Capacitance – VDS Capacitance C (pF) Drain-source voltage V DS (V) 0.1 100 1000 1 3 5 10 30 50 100 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C Vth – Ta Gate threshold voltage Vth ( V ) Ambient temperature Ta (°C) 0.4 0.6 0.8 1.2 −80 −40 0 40 80 120 160 0.2 Common source VDS = 10 V ID = 200μA Pulse test PD – Ta Drain power dissipation PD ( W ) Ambient temperature Ta (°C) 0 40 80 120 160 0.4 0.8 1.2 1.6 (4) (1) (3) (2) t = 5 s Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) Drain-source voltage V DS (V) Total gate charge Q g (nC) Gate-source voltage V GS (V) Dynamic input / output characteristics 0 8 VDD = 16 V VDS 2 4 6 VGS Common source ID = 3 A Ta = 25°C Pulse test

Drain-source voltage V DS (V) Drain current I D (A) 0.1 0.1 1 10 100 100 10 ms* ID max (pulse)* VDSS max 1 ms* *: Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. rth – tw Pulse width tw (s) Transient thermal impedance rth ( ° C / W ) 1 m 10 m 100 m 1 10 100 1000 100 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (1) (2) (3)

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.