TPCF8001 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Chann el MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Portable Equipment Applications

  • Low drain-source ON resistance: R DS (ON) = 19 mΩ (typ.)
  • High forward transfer admittance: |Yfs| = 8 S (typ.)
  • Low leakage current: IDSS = 10 μA (max.) (VDS = 30 V)
  • Enhancement mode: V th = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) V DGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 7 Drain current Pulse (Note 1) IDP 28 A Drain power dissipation (t = 5 s) (Note 2a) PD 2.5 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single-pulse avalanche energy (Note 3) E AS 8 mJ Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 4) E AR 0.25 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: For Notes 1 to 5, refer to the next page Using continuously under heavy loads (e .g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1A Weight: 0.011 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristics Symbol Max. Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 50.0 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.6 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: “●” on the lower left of the marking indicates Pin 1. (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Part No. (or abbreviation code) F2A A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 3.5 A ⎯ 24 31 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3.5 A ⎯ 19 23 mΩ Forward transfer admittance |Yfs| V DS = 10 V, ID = 3.5 A 4 8 ⎯ S Input capacitance Ciss ⎯ 1270 ⎯ Reverse transfer capacitance Crss ⎯ 150 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 190 ⎯ pF Rise time tr ⎯ 3.8 ⎯ Turn-on time ton ⎯ 9.4 ⎯ Fall time tf ⎯ 8.4 ⎯ Switching time Turn-off time toff Duty ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 25.4 ⎯ Gate-source charge 1 Qgs1 ⎯ 3.6 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼ − 24 V, VGS = 10 V, ID = 7.0 A ⎯ 6.2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 28 A Forward voltage (diode) VDSF IDR = 7.0 A, VGS = 0 V ⎯ ⎯ -1.2 V RL = 4.3Ω VDD ∼ − 15 V VGS 10 V 4.7 Ω ID = 3.5 A VOUT

Drain current I D (A) RDS (ON) – ID Drain-source ON resistance RDS (ON) (m Ω) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current ID (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Drain-source voltage VDS ( V ) Gate-source voltage V GS (V) VDS – VGS Drain current I D (A) ⎪Yfs⎪ – ID Forward transfer admittance ⎪Yfs⎪ (S) Common source VDS = 10 V Pulse test 0 1 2 3 4 5 Ta = −55°C 100 Common source Ta = 25℃ Pulse test 0.3 0.4 0.5 ID = 7 A 2 4 6 8 10 1.75 3.5 0.2 0.1 Common source VDS = 10 V Pulse test 0.1 100 0.1 1 100 100 Ta = −55°C Common source Ta = 25°C Pulse test 0 0.2 0.4 0.6 0.8 VGS = 2.5V 2.6 2.8 2.7 2.9 4.5 1.0 3.5

3.2 Common source

Ta = 25°C Pulse test 0 2 5 2.6 2.7 2.8 3.1 2.9 4 3 1 3.2 VGS = 2.5 V 4.5 3.5 Common source Ta = 25°C Pulse test 0.1 1 10 100 1000 VGS = 10 V 100 4.5

Drain-source voltage V DS (V) Capacitance C (pF) Capacitance – VDS 0.1 100 1000 10000 1 10 100 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source ON resistance RDS (ON) ( mΩ) Gate-source voltage V GS (V) Total gate charge Q g (nC) Dynamic input/output characteristics Drain-source voltage V DS (V) Gate threshold voltage V th (V) Ambient temperature Ta (°C) Vth – Ta −80 −40 0 40 80 120 160 Common source VDS = 10 V ID = 1 mA Pulse test Drain power dissipation P D (W) Ambient temperature Ta (°C) PD – Ta Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) −0.4 100 −1.2 −1.6 VGS = 0 V 4.5 −0.8 −2 Common source Ta = 25°C Pulse test 0 8 24 VDD = 24 VVDS VGS 6 12 32 40 Common source ID = 7 A Ta = 25°C Pulse test 0 40 80 120 160 0.5 1.5 2.5 (1) t = 5 s (1) DC (2) t = 5 s (2) DC (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 160 −40 0 40 80 120 −80 ID = 7A,3.5A,1.75A VGS = 10 V Common source Pulse test VGS = 4.5 V ID = 7A,3.5A,1.75A

rth – tw Pulse width t w ( s ) Transient thermal impedance rth ( ° C / W ) Safe operating area Drain-source voltage V DS (V) Drain current I D (A) 0.1 1 m 10 m 100 m 1 10 100 1000 100 1000 Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b) 0.1 0.1 1 10 100 100 10 ms* ID max (pulse)* VDSS max 1 ms* * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.