TPCA8105

TPCA8105 VBSEMI | Alldatasheet

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P-Channel 30 V (D-S) MOSFET

FEATURES

• Extended V GS range (± 25 V) for adaptor switch applica tions  Extremely low R DS(on)  TrenchFET ® Power MOSFET 1 0 0 % Rg and UIS Tested  Typical ESD Perfor mance: 4000 V (HBM) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1 " FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. PRODUCT SUMMARY VDS (V) R DS(on) () Max. ID a Qg (Typ.) - 30 0.0080 at VGS = - 10 V - 60 66 nC0.0090 at VGS = - 6 V - 53 0.0012 at VGS = - 4.5 V - 50 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless ot herwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 60 A TC = 70 °C - 50.7 TA = 25 °C - 47.3 TA = 70 °C - 43.9b, c Pulsed Drain Current (t = 300 µs) IDM - 150 Continuous Source-Drain Diode Current TC = 25 °C IS - 58 b, c TA = 25 °C - 4 6b, c Single Pulse Avalanche Current L = 0.1 mH IAS - 40 Single Pulse Avalanche Energy EAS 80 mJ Maximum Power Dissipation TC = 25 °C PD W TC = 70 °C 40 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RAT INGS Parameter Symbol Typical Maxim um Unit Maximum Junction-to-Ambientb, d t  10 s RthJA 33 40 °C/W Maximum Junction-to-Foot (Drain) Stea dy State RthJF 15 17 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 S G D P-Channel MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8105 A ll data sheet.com

Notes: a. Pulse test; pulse w idth  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Ab solute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unle ss otherwise noted) Parameter Symbol T est Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 24 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ 6 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.0 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 150 µA VDS = 0 V, VGS = ± 20 V ± 15 Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS - 10 V, ID = - 13 A 0.0080 VGS - 6 V, ID = - 10 A 0.0090 VGS - 4.5 V, ID = - 8 A 0.0120 Forward Transconductancea gfs VDS = - 15 V, ID = - 13 A 44 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 4620 pFOutput Capacitance Coss 880 Reverse Transfer Capacitance Crss 820 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 17.3 A 102 153 nCVDS = - 15 V, VGS = - 5 V, ID = - 17.3 A 66 80 Gate-Source Charge Qgs 16 Gate-Drain Charge Qgd 28 Gate Resistance Rg f = 1 MHz 0.3 1.3 2.6  Tur n-On De lay Time td(on) VDD = 0 V, RL = 1.5  ID  - 10 A, VGEN = - 4.5 V, Rg = 1  70 105 ns Rise Time tr 70 105 Turn-Off Delay Time td(off) 45 68 Fall Time tf 27 41 Tur n-On D elay Time td(on) VDD = - 15 V, RL = 1.5  ID  - 10 A, VGEN = - 10 V, Rg = 1  18 30 Rise Time tr 15 25 Turn-Off Delay Time td(off) 52 80 Fall Time tf 14 25 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 5.8 A Pulse Diode Forward Current ISM - 60 Body Diode Voltage VSD IS = - 10 A, VGS = 0 V - 0.78 - 1.2 V Body Diode Reverse Recovery T ime trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 35 53 ns Body Diode Reverse Recovery Charge Qrr 25 38 nC Reverse Recovery Fall Time ta 19 ns Reverse Recovery Rise T ime tb 16 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8105 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless oth erwise noted) Gate Current vs. Gate-Source Voltage Output Characteristic s On-Resistance vs. Drain Current 0.000 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 IGSS - Gate Current (mA) VGS - Gate-Source Voltage (V) TJ = 25 °C 0 0.5 1 1.5 2 ID - Drain Current (A VDS - Drain-to-Source Volt age (V) VGS = 4 V VGS = 10 V thru 5 V VGS = 3 V 0.002 0.005 0.008 0.011 0.014 01 5 3 0 4 5 6 0 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 6 V VGS = 4.5 V VGS = 10 V Gate Current vs. Gate-Source Voltage Transfer Characteristics Cap acitance 10-02 10-03 10-04 10-05 10-06 10-07 10-08 10-09 0 6 12 18 24 30 36 IGSS - Gate Current (A) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C 01234 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C 1200 2400 3600 4800 6000 7200 0 6 12 18 24 30 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8105 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherw ise noted) Gate Charge Source-Drain Diode Forwar d Voltage Threshold Voltage 03 0 6 0 9 0 1 20 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 24 V VDS = 7.5 V VDS = 15 V ID = 17.3 A 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 1.1 1.45 1.8 2.15 2.5 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ -T empera t u r e (°C) ID = 250 μA On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.60 0.85 1.10 1.35 1.60 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) ID = 13A VGS = 10 V VGS = 6.5 V 0.000 0.005 0.010 0.015 0.020 2468 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 13 A Power (W) Time (s) 1 60010 0.10.01 100 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8105 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless o therwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Safe Operating Area, Junction-to-Ambient Power Junction-to-Foot 0.001 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC, 10 s 2.2 4.4 6.6 8.8 0 25 50 75 100 125 150 Power (W) TC - Case Temperature (°C) Current Derating* Power Junction-t o-Ambient 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) 0.0 0.5 0.9 1.4 1.8 0 25 50 75 100 125 150 Power (W) TA - Ambient Temperature (°C) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8105 A ll data sheet.com

PowerPAK SO-8, (SINGLE/DUAL) MILLIMETERS INCHES A1 0.00 - 0.05 0.000 - 0.002 b 0 D4 0.57 TYP. 0.0225 TYP. D5 3.98 TYP. 0.157 TYP. E4 0.75 TYP. 0.030 TYP. e 1.27 BSC 0.050 BSC K 1.27 TYP. 0.050 TYP. M 0.125 TYP. 0.005 TYP. ECN: T10-0055-Rev. J, 15-Feb-10 DWG: 5881 3. Dimensions exclusive of mold flash and cutting burrs. Notes Inch will govern. Dimensions exclusive of mold gate burrs. Backside View of Single Pad Backside View of Dual Pad Detail Z D c θ A θ θ e b H θ b L D3(2x) Z K D E W K LH M 0.150 ± 0.008 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8105 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8105 A ll data sheet.com