TPCA8102-H VBSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free  TrenchFET ® Power MOSFET  100 % R g Tested

APPLICATIONS

 Notebook - Load Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 30 0.004 at VGS = - 10 V - 120 130 nC 0.006 at VGS = - 4.5 V - 100 S G D P-Channel MOSFET Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 boa rd. c. t = 10 s. The DFN5x6 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, un less otherwise noted Parameter Symbol Limit Unit Drain-Source V oltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 120a A TC = 70 °C - 100a TA = 25 °C - 31.6b, c TA = 70 °C - 25.3b, c Pulsed Drain Current IDM - 280 Continuous Source-Drain Diode Curren t TC = 25 °C IS - 80a TA = 25 °C - 56b, c Single Pulse Avalanche Current L = 0.1 mH IAS - 60 Single Pulse Avalanche Energy EAS 160 mJ Maximum Po wer Dissipation TC = 25 °C PD 110 WTC = 70 °C 83 TA = 25 °C 6.95b, c TA = 70 °C 5.0b, c Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature )d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim um Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 15 20 °C/WMaximum Junction-to-Case (Dr ain) Steady State RthJC 0.9 1.2 RoHS COMPLIANT Top Vi ew PIN1 DFN5X6 Top View Bottom View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com

Notes: Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 6.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Dr ain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 20 A 0.004 ΩVGS = - 4.5 V, ID = - 15 A 0.006 Forward Transconductancea gfs VDS = - 15 V, ID = - 20 A 97 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 7050 pFOutput Capacitance Coss 1375 Reverse Transfe r Capacitance Crss 1215 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 20 A 130 250 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 20 A 78 130 Gate-Source Charge Qgs 29 Gate-Drain Charge Qgd 37 Gate Resistan ce Rg f = 1 MHz 1.9 Ω Tur n-On Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω 25 40 ns Rise Time tr 15 30 Turn-Off Delay T ime td(off) 110 170 Fall Ti me tf 30 50 Tur n-O n Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω 110 170 Rise Time tr 100 150 Turn-Off Delay T ime td(off) 100 150 Fall Ti me tf 50 75 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 100 A Pulse Diode Forward Currenta ISM 120 Body Diode Voltage VSD IS = - 5 A - 0.54 - 1.1 V Body Diode Reverse Recov ery Time trr IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 50 100 ns Body Diode Rev erse Recovery Charge Qrr 65 130 nC Reverse Reco very Fall Time ta 26 ns Reverse Recovery Rise Time tb 24 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Re sistance vs. Drain Current and Gate Voltage Gate Charge 100 VGS =10thru 5 V VGS =3V VDS - Drain-to-So urce Voltage (V) - Drain Current (A)I D 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0 2 04 06 0 8 0 100 VGS =1 0V VGS =4 . 5V - On-Resistance ( Ω)RDS(on) ID - Drain Current (A) 0 50 100 150 200 VDS =2 2 . 5V ID =2 8 A VDS =7 . 5V VDS =1 5V - Gate-to- Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On -Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2.5 3.0 TC = 25 °C TC = 125 °C VDS - Drain-to- Source Voltage (V) - Drain Current (A)I D TC = - 55 °C 6000 7000 8000 06 1 2 1 8 24 30 Ciss Coss Crss VDS -D r a i n- t o - S ource Voltage (V) C - Capacitance (pF) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =1 0V VGS =4 .5 V ID =2 0A TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode F orward Voltage Threshold Voltage 1.2 0.01 0.001 0.1 100 TJ = 150 °C TJ = - 50 °C TJ = 25 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =1m A Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Volt age Single Pulse Power, Junction-to-Ambient 0.000 0.008 0.010 0.012 0.014 0.016 01234567 8 91 0 TJ =2 5 ° C TJ = 125 °C - On-Resistance (Ω )RDS(on) VGS - Gate-to- Source Voltage (V) 120 160 200 0 111 0 0 .00 .01 Time (s) Power ( W) 0.1 Safe Operating Area, Ju nction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse 10 s Limited byR DS(on)* BVDSS Limited 1m s 100 µs 10 ms 100 ms 100 s, DC VDS - Drain-to-So urce Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified - Drain Current (A)ID E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com

TYPICAL CHARACTERISTICS 25 ° C, unless otherwise noted * The powe r d issipation PD is based on TJ(max) = 150 °C, using ju nction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 120 150 0 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Power, Junction-to -Case 100 125 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power, Junc tion-to-Ambient 0.0 0.6 1.2 1.8 2.4 3.0 0 25 50 75 100 125 150 TA -A mbient Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, un less otherwise noted Normalized Thermal Trans ient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = Per Unit Base = RthJA = 54 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 Normalized Therm al Transient Impedance, Junction-to-Case 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycl e = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com

E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPCA8102-H A ll data sheet.com