TPCA8021-H TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8021-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications

  • Small footprint due to a small and thin package
  • High speed switching
  • Small gate charge: QSW = 6.9nC (typ.)
  • Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.)
  • High forward transfer admittance: |Yfs| =46 S (typ.)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
  • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 27 Drain current Pulsed (Note 1) I DP 81 A Drain power dissipation (Tc=25 ℃) P D 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 95 mJ Avalanche current I AR 27 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 2.7 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN

Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc=25 ℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 27 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: Type TPCA 8021-H (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Lot No.

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current I DSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 14 A ⎯ 9.5 13 Drain-source ON-resistance R DS (ON) VGS = 10 V, ID = 14 A ⎯ 6.8 9 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 14 A 23 46 ⎯ S Input capacitance C iss ⎯ 1395 ⎯ Reverse transfer capacitance C rss ⎯ 140 ⎯ Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 525 ⎯ pF Rise time t r ⎯ 5 ⎯ Turn-on time t on ⎯ 11 ⎯ Fall time t f ⎯ 10 ⎯ Switching time Turn-off time t off Duty <= 1%, tw = 10 µs ⎯ 31 ⎯ ns VDD ∼− 24 V, VGS = 10 V, ID = 27 A ⎯ 23 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 24 V, VGS = 5 V, ID = 27 A ⎯ 13 ⎯ Gate-source charge 1 Q gs1 ⎯ 4.5 ⎯ Gate-drain (“Miller”) charge Q gd ⎯ 4.9 ⎯ Gate switch charge Q SW VDD ∼− 24 V, VGS = 10 V, ID = 27 A ⎯ 6.9 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 81 A Forward voltage (diode) V DSF I DR = 27 A, VGS = 0 V ⎯ ⎯ −1.2 V RL = 1.1Ω VDD ∼− 15 V 0 V VGS 10 V 4.7 Ω ID = 14A VOUT

VGS = 2.8V 10 4.5 3.9 3.3 3.5 3.7 VGS = 2.6V 2.8 8 3.3 4.5 3.2 3.5 4 6 5 0 0.8 1.6 1.2 0.4 0 0.2 0.4 0.6 0.8 1 0.1 1 10 100 100 0.1 100 0.1 1 100 0 1 2 3 6 4 5 Drain-source voltage V DS (V) ID – VDS Drain current I D ( A ) Drain current I D (A) RDS (ON) – ID Drain-source ON-resistance RDS (ON) ( m Ω) Drain current I D (A) ⎪Yfs⎪ – ID Forward transfer admittance |Y fs| (S) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Drain-source voltage V DS (V) Gate-source voltage V GS (V) VDS – VGS Common source Ta = 25°C Pulse test Common source Ta = 2 5 °C Pulse test 0.3 0.4 0.5 0 2 4 6 8 0.2 0.1 Common source VDS = 10 V Pulse test Ta = −55°C 100 Common source Ta = 25 °C Pulse test ID = 27 A Common source VDS = 10 V Pulse test 100 Ta = −55°C Common source Ta = 25°C Pulse test VGS = 10 V 4.5

VGS = 0 V 4.5 0 8 24 32 40 16 0.5 1.5 2.5 −80 −40 0 40 80 120 160 0.1 100 1000 10000 1 10 100 −0.2 100 −0.6 −0.8 −1.0−0.4 Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) Common source Ta = 25°C Pulse test Gate threshold voltage V th (V) Ambient temperature Ta ( °C) Vth – Ta Common source VDS = 10 V ID = 1 mA Pulse test Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( m Ω) Total gate charge Q g (nC) Drain-source voltage V DS ( V ) Dynamic input/output characteristics Gate-source voltage V GS ( V ) Common source Pulse test ID = 27A 14A VGS = 10 V VGS = 4.5 V ID = 7A,14A,27A 160 −40 0 40 80 120 −80 Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss VDD = 6 V VDS 12 V 24 V Common source ID = 27 A Ta = 25°C Pulse test

1.5 2.5 160 0.5 (1) (2) 0.1 10 1 0.1 100 0.001 100 1000 0.01 0.1 1 10 100 1000 0.1 0 40 80 120 160 Transient thermal impedance r th ( ° C / W ) Case temperature T C ( °C) PD – Tc Drain power dissipation P D (W) Pulse width t w ( s ) Ambient temperature Ta ( °C) PD – Ta Drain power dissipation P D ( W ) (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s rth – tw (2) (1) (3) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ Single - pulse Drain current I D (A) Drain-source voltage V DS (V) Safe operating area 100 0.1 10 1 0.1 100 * Single - pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. ID max (Pulse) * ID max (Continuous) t =1ms * VDSS max 10ms * DC Operation Tc = 25℃