TPCA8020-H TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications z Small footprint due to a small and thin package z High speed switching z Small gate charge: QSW = 3.5 nC (typ.) z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance: |Yfs| = 15 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 40 V Drain-gate voltage (RGS = 20 kΩ) V DGR 40 V Gate-source voltage V GSS ±20 V D C (Note 1) I D 7.5 Drain current Pulse (Note 1) I DP 30 A Drain power dissipation (Tc=25 °C) P D 30 W Drain power dissipation ( t = 1 0 s ) ( N o t e 2 a ) PD 2.8 W Drain power dissipation ( t = 1 0 s ) ( N o t e 2 b ) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 26 mJ Avalanche current I AR 7.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) EAR 1.9 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.066 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc=25 °C) Rth (ch-c) 4.17 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) FR-4 25.4 × 25.4 × 0.8 (Unit : mm) FR-4 25.4 × 25.4 × 0.8 (Unit : mm) Type TPCA 8020-H Lot No. (b) (a)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current I DSS VDS = 40 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ Drain−source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 25 ⎯ ⎯ V Gate threshold voltage V th VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V RDS (ON) VGS = 4.5 V, ID = 3.8 A ⎯ 27 35 Drain−source ON-resistance RDS (ON) VGS = 10 V, ID = 3.8 A ⎯ 22 27 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 3.8 A 7.5 15 ⎯ S Input capacitance C iss ⎯ 650 ⎯ Reverse transfer capacitance C rss ⎯ 55 ⎯ Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 240 ⎯ pF Rise time tr ⎯ 3 ⎯ Turn−on time t on ⎯ 9 ⎯ Fall time t f ⎯ 2 ⎯ Switching time Turn−off time t off Duty <= 1%, tw = 10 µs ⎯ 18 ⎯ ns VDD ∼− 32 V、VGS = 10 V、ID = 7.5 A ⎯ 11 ⎯ Total gate charge (gate−source plus gate−drain) Qg VDD ∼− 32 V、VGS = 5 V、ID = 7.5 A ⎯ 6.2 ⎯ Gate−source charge Q gs1 ⎯ 2.1 ⎯ Gate−drain (“Miller”) charge Q gd ⎯ 2.7 ⎯ Gate switching charge Q sw VDD ∼− 32 V、VGS = 10 V、ID = 7.5 A ⎯ 3.5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP — — — 30 A Forward voltage (diode) V DSF IDR = 7.5 A, VGS = 0 V — — −1.2 V RL = 5.3 Ω VDD ∼− 20 V 0 V VGS 10 V 4.7 Ω ID = 3.8 A VOUT

Forward transfer admittance |Y fs| (S) Drain-source voltage V DS ( V ) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Gate-source voltage V GS (V) VDS – VGS Drain current I D (A) |Yfs| – ID Drain current I D (A) Drain-source ON-resistance RDS (ON) ( m Ω) RDS (ON) – ID 0.2 0.4 0.6 1.0 Common source Ta = 25°C Pulse test VGS = 2.6 V 2.7 3.8 0.8 2.9

20 Common source

Ta = 25°C Pulse test 100 0.1 1 10 100 4.5 VGS = 10 V Common source Ta = 25°C Pulse test 0.1 0.2 0.3 0.4 0.5 0 2 4 8 10 12 1.9 3.8 Common source Ta = 25°C Pulse test ID = 7.5 A 0.1 100 0.1 1 10 100 100 Ta = −55°C Common source VDS = 10 V Pulse test Ta = −55°C 0 1 2 4 5 6 100 Common source VDS = 10 V Pulse test 4.5 3.4 3.2 3.1 2.8 4.5 4 3.8 3.6 3.4 3.2 2.8 VGS = 2.6 V Drain current I D ( A )

Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( m Ω) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Ambient temperature Ta ( °C) Vth – Ta Gate threshold voltage V th (V) −80 −40 0 40 80 160 120 1.0 1.5 2.5 Common source VDS = 10 V ID = 1 mA Pulse test 2.0 0.5 0.1 100 Common source Ta = 25°C Pulse test 3

1 VGS = 0 V

4.5 100 1000 10000 0.1 1 10 100 Crss Coss Ciss Common source Ta = 25°C f = 1 MHz VGS = 0 V −80 −40 0 40 80 160 Common source Pulse test 120 VGS = 4.5 V ID = 7.5 A 1.9 10 V ID = 7.5 A, 3.8 A, 1.9 A 3.8 Gate-source voltage V GS (V) Total gate charge Q g (nC) Dynamic input/output characteristics Drain-source voltage V DS (V) 4 12 Common source ID = 7.5 A Ta = 25°C Pulse test VGS VDD = 32 V VDS 16 30 12

rth – tw 0.001 100 1000 0.01 0.1 1 10 100 1000 0.1 Single - pulse (2) (1) (3) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc =25℃ Safe operating area 0.1 100 1 10 100 0.1 VDSS max ｔ＝1 ms * ID max (Pulse) * 10 ms *ID max (Continuous) DC Opeation Tc = 25°C 0 40 80 120 1.5 2.5 160 0.5 PD – Tc 0 40 80 120 160 PD – Ta (1) (2) Pulse width t w ( s ) Transient thermal impedance r th ( ° C / W ) Drain power dissipation P D (W) Case temperature Tc ( °C) Drain power dissipation P D ( W ) Ambient temperature Ta ( °C) Drain-source voltage V DS (V) Drain current I D (A) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s * Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature.