TPCA8016-H_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Efficiency DC／DC Converter Applications

  • Small footprint due to small and thin package
  • High-speed switching
  • Small gate charge: Qsw = 6.6 nC (typ.)
  • Low drain-source ON resistance: R DS (ON) = 16 mΩ (typ.)
  • High forward transfer admittance: |Yfs| = 40 S (typ.)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
  • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 25 Drain current Pulsed (Note 1) I DP 75 A Drain power dissipation (Tc = 25 ℃) P D 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 45 mJ Avalanche current I AR 25 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 2.7 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN

Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc=25 ℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) Type TPCA 8016-H Lot No.

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current I DSS V DS = 60 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 45 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 10 V, ID = 13 A ⎯ 16 21 Drain-source ON-resistance R DS (ON) VGS = 4.5 V, ID = 13 A ⎯ 20 26 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 13 A 20 40 ⎯ S Input capacitance C iss ⎯ 1375 ⎯ Reverse transfer capacitance C rss ⎯ 70 ⎯ Output capacitance C oss ⎯ 340 ⎯ pF Gate resistance R g VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1.0 ⎯ Ω Rise time t r ⎯ 4 ⎯ Turn-on time t on ⎯ 10 ⎯ Fall time t f ⎯ 3 ⎯ Switching time Turn-off time t off Duty <= 1%, tw = 10 µs ⎯ 19 ⎯ ns VDD ∼− 48 V, VGS = 10 V, ID = 25 A ⎯ 22 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 48 V, VGS = 5 V, ID = 25 A ⎯ 12 ⎯ Gate-source charge 1 Q gs1 ⎯ 4.6 ⎯ Gate-drain (“Miller”) charge Q gd ⎯ 4.2 ⎯ Gate switch charge Q SW VDD ∼− 48 V, VGS = 10 V, ID = 25 A ⎯ 6.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 75 A Forward voltage (diode) V DSF I DR = 25 A, VGS = 0 V ⎯ ⎯ −1.2 V RL =2.3Ω VDD ∼− 30 V 0 V VGS 10 V 4.7 Ω ID = 13 A VOUT

VGS = 10 V 4.5 V 0.1 10 100 100 0.1 100 0.1 1 100 10 0.6 0.8 1.0 0 2 4 6 8 10 0.4 0.2 0 2 4 6 100 Drain current I D (A) RDS (ON) – ID Drain-source ON-resistance RDS (ON) ( m Ω) Gate-source voltage V GS (V) ID – VGS Drain current I D ( A ) Drain-source voltage V DS ( V ) Gate-source voltage V GS (V) VDS – VGS Drain current I D (A) ⎪Yfs⎪ – ID Forward transfer admittance |Y fs| (S) Ta = −55°C 100 Common source VDS = 10 V Pulse test ID = 25 A 6.3 Common source Ta = 25℃ Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Drain-source voltage V DS (V) ID – VDS Drain current I D ( A ) Drain-source voltage V DS (V) ID – VDS Drain current I D ( A ) Common source Ta = 25°C Pulse test VGS = 2.8 V 4.5 Common source Ta = 25°C Pulse test 10 5 23 4 3.1 3.3 3.5 3.7 VGS = 3 V 3.5 3.8 4 4.510 3.3 100 Ta = −55°C

4.5

1 VGS = 0 V

ID = 6.3 A VGS = 4.5 V VGS = 10 V 6.3 −80 −40 0 40 80 120 160 0.1 100 1000 10000 1 10 100 0.1 −0.2 100 1000 −0.6 −0.8 −1.0−0.4160 −40 0 40 80 120 −80 Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( m Ω) Gate threshold voltage V th (V) Ambient temperature Ta ( °C) Vth – Ta Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) Common source Pulse test Common source Ta = 25°C Pulse test Ciss Coss CrssCommon source VGS = 0 V f = 1 MHz Ta = 25°C Gate-source voltage V GS (V) Dynamic input/output characteristics Total gate charge Q g (nC) Drain-source voltage V DS (V) VDS = 48 V VGS VDS Common source ID = 25 A Ta = 25°C Pulse test 20 30 10 20 10 Common source VDS = 10V ID = 1mA Pulse test

rth – tw Pulse width t w ( s ) Transient thermal impedance r th ( ° C / W ) 0.001 100 1000 0.01 0.1 1 10 100 1000 Single - pulse (2) (1) (3) 0.1 ID max (Pulse) * ID max (Continuous) * Single - pulse Tc = 25°C Curves must be derated linearly with increase in temperature. (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25°C Safe operating area Drain-source voltage V DS (V) Drain current I D (A) 0.1 100 1 10 100 VDSS max 0.01 10 ms * 0.1 t = 1 ms * 0 40 80 120 1.5 2.5 160 0.5 (1) (2) Case temperature Tc ( °C) PD – T c Drain power dissipation P D ( W ) 0 40 80 120 160 Ambient temperature Ta ( °C) PD – Ta Drain power dissipation P D (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t ＝10s DC Operation Tc = 25°C