TPCA8014-H_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8014-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications

  • Small footprint due to a small and thin package
  • High-speed switching
  • Small gate charge: Qsw = 7.4 nC (typ.)
  • Low drain-source ON-resistance: RDS (ON) = 7.1 mΩ (typ.)
  • High forward transfer admittance: |Yfs| = 47 S (typ.)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
  • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 kΩ) VDGR 40 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 30 Drain current Pulsed (Note 1) I DP 90 A Drain power dissipation (Tc = 25 ℃) P D 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 84 mJ Avalanche current I AR 30 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 2.7 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc=25 ℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 30 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Type TPCA 8014-H Lot No.

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current I DSS V DS = 40 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 25 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 10 V, ID = 15 A ⎯ 7.1 9.0 Drain-source ON-resistance R DS (ON) VGS = 4.5 V, ID = 15 A ⎯ 10.5 14 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 15 A 24 47 ⎯ S Input capacitance C iss ⎯ 1365 ⎯ Reverse transfer capacitance C rss ⎯ 110 ⎯ Output capacitance C oss ⎯ 480 ⎯ pF Gate resistance R g VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1.0 ⎯ Ω Rise time t r ⎯ 5 ⎯ Turn-on time t on ⎯ 11 ⎯ Fall time t f ⎯ 4 ⎯ Switching time Turn-off time t off Duty <= 1%, tw = 10 µs ⎯ 18 ⎯ ns VDD ∼− 32 V, VGS = 10 V, ID = 30 A ⎯ 22 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 32 V, VGS = 5 V, ID = 30 A ⎯ 12 ⎯ Gate-source charge 1 Q gs1 ⎯ 5.1 ⎯ Gate-drain (“Miller”) charge Q gd ⎯ 4.9 ⎯ Gate switch charge Q SW VDD ∼− 32 V, VGS = 10 V, ID = 30 A ⎯ 7.4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 90 A Forward voltage (diode) V DSF I DR = 30 A, VGS = 0 V ⎯ ⎯ −1.2 V RL =1.33Ω VDD ∼− 20 V 0 V VGS 10 V 4.7 Ω ID = 15 A VOUT

ID – VGS Drain current I D (A) Gate-source voltage V GS (V) 1 0 5 2 3 4 VDS – VGS Drain-source voltage V DS ( V ) Gate-source voltage V GS (V) 1.0 0.2 0.6 0.4 0.8 20 10 46 8 RDS (ON) − ID Drain-source ON-resistance RDS (ON) ( m Ω) Drain current I D (A) 100 0.1 1 10 100 Common source Ta = 25 °C Pulse test VGS = 4.5 V 100 Ta = −55 °C Common source VDS = 10 V Pulse test Common source Ta = 25 °C Pulse test ID = 30 A 15 7.5 ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D ( A ) Drain-source voltage V DS (V) 0 2 5 4 3 1 10 4 3.2 4.5 Common source Ta = 25 °C Pulse test Common source Ta = 25 °C Pulse test 3.6 4.5 VGS = 2.2 V Drain current I D (A) ⎪Yfs⎪ – ID Forward transfer admittance |Y fs| (S) Common source VDS = 10 V Pulse test 0.1 100 0.1 1 100

100 Ta = −55 °C

2.8 2.6 4 3.4 3.2 2.8 VGS = 2.6 V

RDS (ON) − Ta Drain-source ON-resistance RDS (ON) ( m Ω) Ambient temperature Ta ( °C) −40 −80 1600 80 120 ID = 30 A 7.5 Common source Pulse test IDR – VDS Drain reverse current I DR (A) Drain-source voltage V DS (V) 0.1 100 1000 Vth – Ta Gate threshold voltage V th (V) Ambient temperature Ta ( °C) 1.0 2.0 1.5 −80 −40 0 40 80 120 160 0.5 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST Capacitance – VDS Capacitance C (pF) Drain-source voltage V DS (V) 1000 10000 0.1 1 10 100 100 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25 °C Common source Ta = 25 °C Pulse test 10 5 3

1 VGS = 0 V

VGS = 4.5 V 30 7.5 Gate-source voltage V GS (V) Total gate charge Q g (nC) Dynamic input/output characteristics Drain-source voltage V DS (V) 0 0 0 10 30 VDS VDD = 32 V VGS Common source ID = 30 A Ta = 25 °C Pulse test Common source VDS = 10 V ID = 1 mA Pulse test

rth – tw Transient thermal impedance rth ( ° C / W ) Pulse width t w (s) 1000 0.1 0.001 1000 0.01 1 10 100 100 0.1 (1) (2) (3) Single-pulse (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) T c = 25 ℃ (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s PD – Tc Drain power dissipation P D (W) Case temperature T C ( °C) 0 40 80 120 160 PD – Ta Drain power dissipation P D (W) Ambient temperature Ta ( °C) 3.0 2.0 1.5 2.5 1.0 0.5 0 40 80 120 160 (1) (2) Drain current I D (A) Drain-source voltage V DS ( V ) Safe operating area 0.1 1 10 100 0.1 1000 ID max (Pulse) * ID max (Continuous) t = 1 ms * 10 ms * 100 * Single - pulse Tc = 25℃ Curves must be derated linearly with increase in temperature. DC Operation Tc = 25℃ VDSS max