TPCA8009-H_07 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Cha nnel MOS Type (MACHⅡπ-MOSⅤ) TPCA8009-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications

  • Small footprint due to a small and thin package
  • High-speed switching
  • Small gate charge: Q SW = 3.7 nC (typ.)
  • Low drain-source ON-resistance: RDS (ON) = 0.23Ω (typ.)
  • High forward transfer admittance: |Yfs| = 4.5S (typ.)
  • Low leakage current: IDSS = 100 μA (max) (VDS = 150 V)
  • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 150 V Drain-gate voltage (RGS = 20 kΩ) VDGR 150 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 7 Drain current Pulsed (Note 1) I DP 14 A Drain power dissipation (Tc=25 ℃) P D 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 34 mJ Avalanche current IAR 7 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 1.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 5.0±0.2 0.95±0.05 0.166±0.05 S 0.05 S A 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc=25℃ ) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) R th (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) R th (ch-a) 78.1 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a ) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 50 V, Tch = 25°C (initial), L = 1mH, RG = 25 Ω, IAR = 7 A Note 4: Repetitive rating: pulse widt h limited by max channel temperature Note 5: (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) TypeTPCA 8009-H Lot No.

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS V DS = 150 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 150 ⎯ ⎯ ID = 10 mA, VGS = −5 V 150 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 100 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) V GS = 10 V, ID = 3.5 A ⎯ 0.23 0.35 Ω Forward transfer admittance |Yfs| V DS = 10 V, ID = 3.5 A 2.1 4.5 ⎯ S Input capacitance Ciss ⎯ 600 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 220 ⎯ pF Rise time tr ⎯ 8 ⎯ Turn-ON time ton ⎯ 17 ⎯ Fall time tf ⎯ 13 ⎯ Switching time Turn-OFF time t off Duty < = 1%, tw = 10 μs ⎯ 70 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 10 ⎯ Gate-source charge Qgs ⎯ 7.6 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 2.4 ⎯ Gate switch charge Qsw VDD ∼ − 120 V, VGS = 10 V, I D = 7 A ⎯ 3.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 14 A Forward voltage (diode) VDSF I DR = 7 A, VGS = 0 V ⎯ ⎯ −2.0 V RL = 21 Ω VDD ∼ − 75 V 0 V VGS 10 V 4.7 Ω ID = 3.5 A VOUT

Gate-source voltage V GS ( V ) ID – VGS Drain current I D (A) 4 8 0 2 10 6 Common source VDS = 10 V Pulse test Ta = −55°C 100 Gate-source voltage V GS ( V ) VDS – VGS Drain-source voltage V DS (V) 8 12 16 20 Common source Ta = 25°C Pulse test ID = 7 A 1.7 3.5 Forward transfer admittance |Y fs| (S) Drain current I D (A) |Yfs| – ID Drain current I D (A) Drain-source ON-resistance RDS (ON) ( m Ω) RDS (ON) – ID 0.1 100 0.1 100 1 10 Common source VDS = 10 V Pulse test Ta = −55°C 25 100 100 0.1 100 1000 11 0 10000 Common source Ta = 25°C VGS = 10 V Pulse test Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) 8 12 16 20 2 3 4 50 1 VGS = 4 V Common source Ta = 25°C Pulse test 10 6 5.5 4.5 VGS = 4.5 V 5.5 6.5 Common source Ta = 25°C Pulse test

RDS (ON) − Ta Drain-source ON-resistance RDS (ON) ( m Ω) Ambient temperature Ta (°C) 200 600 400 −40 −80 160 0 40 120 80 IDR − VDS Drain reverse current I DR (A) Drain-source voltage V DS (V) 800 −0.40 −0.8 −1.2 0.1 100 ID = 7A 3.5 Common source VGS = 10 V Pulse test 1.7 Common source Ta = 25°C Pulse test VGS = 0 V 1 Vth − Ta Gate threshold voltage V th (V) Ambient temperature Ta (°C) −80 0 40 80 120 160−40 Common source VDS = 10 V ID = 1mA Pulse test Total gate charge Q g ( n C ) Drain-source voltage V DS (V) Dynamic input/output characteristics Gate-source voltage V GS ( V ) 200 150 100 0 10 15 5 VDD = 120V 60V 30V VDS VGS Common source ID = 7 A Ta = 25°C Pulse test 0.1 100 1000 1 10 100 Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss

Drain-source voltage V DS (V) 1 10 100 Drain current I D (A) 0.1 100 1000 rth – tw Pulse width t w (s) Transient thermal impedance rth ( ° C / W ) 0.001 100 1000 0.01 0.1 1 10 100 1000 Single pulse (2) (1) (3) 0.1 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ Case temperature Tc (°C) PD – Tc Drain power dissipation P D (W) 0 40 80 120 160 0 40 80 120 1.5 2.5 160 0.5 (1) (2) Ambient temperature Ta (°C) PD – Ta Drain power dissipation P D (W) *Single - pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (Pulse) * ID max(Continuous) DC Operation Tc = 25°C 10 ms * t =1 ms * VDSS max (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
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