TPCA8004-H_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8004-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications

  • Small footprint due to a small and thin package
  • High speed switching
  • Small gate charge: QSW =12.7 nC (typ.)
  • Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.)
  • High forward transfer admittance: |Yfs| =80 S (typ.)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
  • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 40 Drain current Pulsed (Note 1) I DP 120 A Drain power dissipation (Tc=25℃) P D 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 208 mJ Avalanche current I AR 40 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc=25 ℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V， T ch = 25°C (initial)， L = 0.1 mH， R G = 25 Ω， I AR = 40 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: Type TPCA 8004-H (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Lot No.

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current I DSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 20 A ⎯ 4.8 6.2 Drain-source ON-resistance R DS (ON) VGS = 10 V, ID = 20 A ⎯ 3.5 4.6 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 20 A 40 80 ⎯ S Input capacitance C iss ⎯ 2265 ⎯ Reverse transfer capacitance C rss ⎯ 255 ⎯ Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1045 ⎯ pF Rise time t r ⎯ 5 ⎯ Turn-on time t on ⎯ 14 ⎯ Fall time t f ⎯ 11 ⎯ Switching time Turn-off time t off Duty <= 1%, tw = 10 µs ⎯ 50 ⎯ ns VDD ∼− 24 V, VGS = 10 V, ID = 40 A ⎯ 37 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 24 V, VGS = 5 V, ID = 40 A ⎯ 20 ⎯ Gate-source charge 1 Q gs1 ⎯ 8.2 ⎯ Gate-drain (“Miller”) charge Q gd ⎯ 8.7 ⎯ Gate switch charge Q SW VDD ∼− 24 V, VGS = 10 V, ID = 40 A ⎯ 12.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 120 A Forward voltage (diode) V DSF I DR = 40 A, VGS = 0 V ⎯ ⎯ −1.2 V RL = 0.75Ω VDD ∼− 15 V 0 V VGS 10 V 4.7 Ω ID = 20A VOUT

0.1 1 10 100 VGS = 10 V 100 4.5 0.1 100 1000 0.1 1 100 100 Ta = −55°C 0 1 2 3 6 100 Ta = −55°C 100 4 5 Drain-source voltage V DS (V) ID – VDS Drain current I D ( A ) Drain current I D (A) RDS (ON) – ID Drain-source ON-resistance RDS (ON) ( m Ω) Common source Ta = 25°C Pulse test Drain current I D (A) ⎪Yfs⎪ – ID Common source VDS = 10 V Pulse test Forward transfer admittance |Y fs| (S) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Common source VDS = 10 V Pulse test Drain-source voltage V DS (V) Gate-source voltage V GS (V) VDS – VGS 100 0 2 VGS = 3V 4.55 4 3 1 3.9 3.2 3.4 3.6 3.8 Common source Ta = 25°C Pulse test 0 0.2 0.4 0.6 0.8 VGS = 2.8V 3.2 3.5 4.5 3.6 3.4 3.8 4 Common source Ta = 25°C Pulse test 0.24 0.32 0.4 ID = 40 A 2 4 6 8 0.16 0.08 Common source Ta = 25°C Pulse test

160 −40 0 40 80 120 −80 ID = 40A 10A 20A VGS = 10 V VGS = 4.5 V ID = 10A,20A,40A 0 8 24 VDD = 6 V VDS VGS 32 40 16 0.5 1.5 2.5 −80 −40 0 40 80 120 160 0.1 100 1000 10000 1 10 100 Ciss Coss Crss 0.1 −0.2 100 1000 −0.6 −0.8 −1.0 VGS = 0 V 4.5 −0.4 Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) Common source Ta = 25°C Pulse test Gate threshold voltage V th (V) Ambient temperature Ta ( °C) Vth – Ta Common source VDS = 10 V ID = 1 mA Pulse test Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( m Ω) Common source Pulse test Total gate charge Q g (nC) Drain-source voltage V DS ( V ) Dynamic input/output characteristics Common source ID = 40 A Ta = 25°C Pulse test Gate-source voltage V GS ( V )

1.5 2.5 160 0.5 (1) (2) 100 1000 0.1 10 1 0.1 100 0.001 100 1000 0.01 0.1 1 10 100 1000 (2) (1) (3) 0.1 0 40 80 120 160 Transient thermal impedance r th ( ° C / W ) Case temperature T C ( °C) PD – Tc Drain power dissipation P D (W) Pulse width t w ( s ) Ambient temperature Ta ( °C) PD – Ta (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) T c=25℃ (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s rth – tw Single - pulse Drain current I D (A) Drain-source voltage V DS (V) Safe operating area 100 1000 0.1 10 1 ID max (Pulse) * ID max (Continuous) t=1ms * VDSS max 0.1 10ms * 100 Drain power dissipation P D ( W ) * Single - pulse Ta = 2 5℃ Curves must be derated linearly with increase in temperature. DC Operation Tc=25℃