TPCA8004-H

TPCA8004-H TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8004-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg =37 nC (typ.) Low drain-source ON resistance: RDS (ON) = 3.5 mΩ (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS V Drain-gate voltage (RGS = 20 kΩ) VDGR V Gate-source voltage VGSS ±20 V DC (Note 1) ID Drain current Pulsed (Note 1) IDP 120 A Drain power dissipation (Tc=25℃) PD W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 208 mJ Avalanche current IAR A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 4.5 mJ Channel temperature Tch 150 Storage temperature range Tstg −55 to 150 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595 0.05 M A 0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 JEDEC JEITA TOSHIBA Weight: 0.08 g (typ.) Circuit Configuration 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN

Thermal resistance, channel to case (Tc=25℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = 24 V， Tch = 25°C (initial)， L = 0.1 mH， RG = 25 Ω， IAR = 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: Type TPCA 8004-H (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Lot No.

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V µA V (BR) DSS ID = 10 mA, VGS = 0 V Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 2.3 V VGS = 4.5 V, ID = 20 A 4.8 6.2 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 20 A 3.5 4.6 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 20 A S Input capacitance Ciss 2265 Reverse transfer capacitance Crss 255 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 1045 pF Rise time tr Turn-ON time ton Fall time tf Switching time Turn-OFF time toff Duty < = 1%, tw = 10 µs ns VDD ∼ − 24 V, VGS = 10 V, ID = 40 A Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 5 V, ID = 40 A Gate-source charge 1 Qgs1 8.2 Gate-drain (“miller”) charge Qgd 8.7 Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 40 A 12.7 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP 120 A Forward voltage (diode) VDSF IDR = 40 A, VGS = 0 V −1.2 V RL = 0.75Ω VDD ∼ − 15 V 0 V VGS 10 V 4.7 Ω ID = 20A VOUT

0.1 100 VGS = 10 V 100 4.5 0.1 100 1000 0.1 100 100 Ta = −55°C 100 Ta = −55°C 100 DRAIN-SOURCE VOLTAGE VDS (V) ID – VDS DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (mΩ) COMMON SOURCE Ta = 25°C PULSE TEST DRAIN CURRENT ID (A) Yfs – ID COMMON SOURCE VDS = 10 V PULSE TEST FORWARD TRANSFER ADMITTANCE Yfs (S) DRAIN-SOURCE VOLTAGE VDS (V) ID – VDS DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) ID – VGS DRAIN CURRENT ID (A) COMMON SOURCE VDS = 10 V PULSE TEST DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V) VDS – VGS 100 VGS = 3V 4.5 3.9 3.2 3.4 3.6 3.8 COMMON SOURCE Ta = 25°C PULSE TEST 0.2 0.4 0.6 0.8 VGS = 2.8V 3.2 3.5 4.5 3.6 3.4 3.8 COMMON SOURCE Ta = 25°C PULSE TEST 0.24 0.32 0.4 ID = 40 A 0.16 0.08 COMMON SOURCE Ta = 25℃ PULSE TEST

−40 120 −80 ID = 40A 10A 20A VGS = 10 V VGS = 4.5 V ID = 10A,20A,40A VDD = 6 V VDS VGS 0.5 1.5 2.5 −80 −40 120 160 0.1 100 1000 10000 100 Ciss Coss Crss 0.1 −0.2 100 1000 −0.6 −0.8 −1.0 VGS = 0 V 4.5 −0.4 DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS CAPACITANCE C (pF) COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C DRAIN-SOURCE VOLTAGE VDS (V) IDR – VDS DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE Ta = 25°C PULSE TEST GATE THRESHOLD VOLTAGE Vth (V) AMBIENT TEMPERATURE Ta (°C) Vth – Ta COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST AMBIENT TEMPERATURE Ta (°C) RDS (ON) – Ta DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω) COMMON SOURCE PULSE TEST TOTAL GATE CHARGE Qg (nC) DRAIN POWER DISSIPATION PD (W) DYNAMIC INPUT / OUTPUT CHARACTERISTICS COMMON SOURCE ID = 40 A Ta = 25°C PULSE TEST DRAIN-SOURCE VOLTAGE VDS (V)

1.5 2.5 160 0.5 (1) (2) 100 1000 0.1 0.1 100 0.001 100 1000 0.01 0.1 100 1000 (1) (2) (3) 0.1 120 160 TRANSIENT THERMAL IMPEDANCE rth (℃/W) CASE TEMPERATURE Tc (°C) PD – Tc DRAIN POWER DISSIPATION PD (W) PULSE WIDTH tw (s) AMBIENT TEMPERATURE Ta (°C) PD – Ta DRAIN POWER DISSIPATION PD (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s rth – tw SINGLE PULSE DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) SAFE OPERATING AREA 100 1000 0.1 ※ SINGLE NONREPETITIVE PULSE Tc=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. ID max (PULSED) * ID max (CONTINUOUS) * t=1ms VDSS max 0.1 t=10ms 100 DC

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
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