TPC8121 VBSEMI | Alldatasheet

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Technical content

P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free  TrenchFET ® Power MOSFET 1 0 0 % Rg Tested 1 0 0 % U I S T e s t e d

APPLICATIONS

 Load Switch  Notebook Adaptor Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. Based on TC = 25 °C. PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)d Qg (Typ.) - 30 0.011 at VGS = - 10 V - 13.5 29.5 nC 0.015 at VGS = - 4.5 V - 11.6 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 13.5 A TC = 70 °C - 11.9 TA = 25 °C - 10.9a, b TA = 70 °C - 8.6a, b Pulsed Drain Current IDM - 50 Continuous Source-Drain Diode Current TC = 25 °C IS - 4.1 TA = 25 °C - 2.2a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.0 WTC = 70 °C 3.2 TA = 25 °C 2.7a, b TA = 70 °C 1.7a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 38 46 °C/WMaximum Junction-to-Foot Steady State RthJF 20 25 S G D P-Channel MOSFET S S D D D S G D SO-8 Top View RoHS COMPLIANT E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may ca use permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 34 mV/ °CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.4 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 10 A 0.011 ΩVGS = - 4.5 V, ID = - 8 A 0.015 Forward Transconductancea gfs VDS = - 10 V, ID = - 10 A 28 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 2550 pFOutput Capacitance Coss 455 Reverse Transfer Capacitance Crss 390 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10 A 57 86 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 29.5 45 Gate-Source Charge Qgs 8 Gate-Drain Charge Qgd 22 Gate Resistance Rg f = 1 MHz 0.5 2.2 4.4 Ω Tur n-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 13 25 ns Rise Time tr 12 24 Turn-Off DelayTime td(off) 40 70 Fall Time tf 91 8 Tur n-On Delay T ime td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 48 80 Rise Time tr 92 160 Turn-Off DelayTime td(off) 34 60 Fall Time tf 19 35 Drain-Source Body Diode Characteristi cs Continous Source-Drain Diode Current I S TC = 25 °C - 4.1 APulse Diode Forward Current ISM - 60 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.75 - 1.2 V Body Diode Reverse Recovery T ime t rr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 27 45 ns Body Diode Reverse Recovery Charge Qrr 16 27 nC Reverse Recovery Fall Time ta 12 nsReverse Recovery Rise Time tb 15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless other wise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge V DS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS =1 0t h ru 4 V VGS =3V VGS = 2 V 0.005 0.010 0.015 0.020 0.025 0.030 0 1 02 03 04 05 06 0 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 0 1 22 43 64 8 60 ID =1 0A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) V GS DS =1 0VV DS =1 5VV VDS = 20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temp erature 012345 V GS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = 125 °C TC = 25 °C TC = - 55 °C Crss 800 1600 2400 3200 4000 0 5 10 15 20 25 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF)Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) ID = - 10 A VGS = - 10 V VGS = - 4.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Thres hold Voltage VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 Variance (V)VGS(th) TJ - Temperature (°C) ID =2 5 0µA ID =5 m A On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Am bient 0.00 0.02 0.04 0.06 0.08 0.10 02468 10 - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =1 0 A 102 136 170 0 111 0 0 .00 .01 Time (s) Power ( W) 0.1 Safe Operating Area 0.01 100 100 0.01 - Drain Current (A)ID 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.1 1 10 TA = 25 °C Single Pulse BVDSS Limited byR DS(on)* DC 10 s 100 ms 10 ms 1m s 1 s E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless other wise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cas es where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 3.4 6.8 10.2 13.6 17.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot TC - Case Temperature (°C) 0.0 1.2 2.4 3.6 4.8 6.0 0 25 50 75 100 125 150 Power (W) Power Derating, Junct ion-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Bas e = RthJA = 85 °C/W 3. TJM -- TA =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 Normalized Thermal Transient Impedance, Junction-to-Foo t 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1

0.01 Single Pulse

0.02 0.05 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3 .80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8121 A ll data sheet.com