TPC8120 VBSEMI | Alldatasheet

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Technical content

P-Channel 30 V (D-S) MOSFET

FEATURES

  • TrenchFET® Gen IV p-channel power MOSFET
  • E nables higher power density
  • 100 % Rg and UIS tested

APPLICATIONS

  • Battery management in mobile devices
  • Adapter an d charger switch
  • Battery switch
  • L o a d s w i t c h Notes a. Pack ag e limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bo ttom side solder interconnection e. Rework conditions: manual soldering with a solderin g iron is not recommended for leadless components f. Maximum under steady st ate conditions is 85 °C/W g. T C = 25 °C PRODUCT SUMMARY VDS (V) -30 RDS(on) max. () at VGS = 10 V 0.0050 RDS(on) max. () at VGS = 4.5 V 0.0080 Qg typ. (nC) 27 ID (A) 18 Configuration Single Top View SO-8 Single S S S S S G D D D D S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless othe rwise noted) PARAMETER SYMBOL LIMIT UNIT Dr ain-source voltage VDS -30 VGate-source voltage VGS Continuous drain current (TJ = 150 °C) TC = 25 °C ID -18 A TC = 70 °C -13 TA = 25 °C -11 TA = 70 °C -8 Pulsed drain current (t = 100 μs) IDM -145 Continuous source-drain diode current TC = 25 °C IS TA = 25 °C -2.8 b, c Single pulse aval anche current L = 0.1 mH IAS -25 Single pulse av alanche energy EAS 31.2 mJ Maximum power diss ipation TC = 25 °C IP 5.6 WTC = 70 °C 3.6 TA = 25 °C 3.1 b, c TA = 70 °C 2 b, c Operating juncti on and storage temperature range TJ, Tstg -55 to +150 °CSoldering re commendations (peak temperature) c 260 THERMAL RESISTANCE RATING S PARAMETER SYMBOL TYPICAL MAXIMUM UN IT Maximum junction-to-ambient b t  10 s RthJA 34 40 °C/WMaximum junction -to-case (drain) Steady state R thJF 18 22 ± 20 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

a. Pulse te s t; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed u nder “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless othe rwise noted) PARAMETER SYMBOL T EST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - V VDS temperature co efficient VDS/TJ ID = -10 mA - -17 - mV/° CVGS(th) temperature coe fficient VGS(th)/TJ ID = -250 μA - 5.5 - Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA -1 - -2.2 V Gate -source leakage IGSS VDS = 0 V, VGS = +16 / -20 V - - 100 nA Zero gate voltage drain current IDSS VDS = -30 V, VGS = 0 V - - -1 μAVDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15 On-state drain current a ID(on) VDS  -10 V, VGS = -10 V -40 - - A Drain-so urce on-state resistance a RDS(on) Forward tran sconductance a gfs VDS = -15 V, ID = -15 A - 81 - S Dynamic b Input capacitance Ciss VDS = -15 V, VGS = 0 V, f = 1 MHz - 3490 - pFOutput capacit ance Coss - 1420 - Rever se transfer capacitance Crss -7 0- Total gate charge Qg VDS = -15 V, VGS = -10 V, ID = -10 A - 56 84 nCVDS = -15 V, VGS = -4.5 V, ID =-10 A -2 7 4 1 Gate-sourc e charge Qgs -9 . 4- Gate-drain charge Qgd -8 . 2- Gate resistanc e Rg f = 1 MHz 1.5 3.5 6  Turn-on del ay time td(on) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -10 V, Rg = 1  -1 5 3 0 ns Rise time tr -6 1 2 Turn-off dela y time td(off) -3 9 7 8 Fall ti me tf -1 0 2 0 Turn-on del ay time td(on) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -4.5 V, Rg = 1  -3 4 6 8 Rise time tr - 86 172 Turn-off dela y time td(off) -3 1 6 2 Fall ti me tf -2 2 4 4 Drain-Source Bod y Diode Characteristics Continuous source-drain diode current I S TC = 25 °C - - -5 APulse dio de forward current ISM - - -150 Body diode voltage VSD IS = -5 A, VGS = 0 V - -0.73 -1.1 V B ody diode reverse recovery time trr IF = -10 A, di/dt = 100 A/ μs, TJ = 25 °C -4 4 8 8 n s B ody diode reverse recovery charge Qrr -4 1 8 2 n C Reve rse recovery fall time ta -1 9- nsReverse re covery rise time tb -2 5- E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

CTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance v s. Drain Current and Gate Voltage Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 100 1000 10000 120 150 012345 Ax is Title 1st line 2nd line 2nd line ID - Drain Current (A) VDS - Drain-to-Source Volt age (V) 2nd line VGS = 10 V thru 5 V VGS = 4 V VGS = 2 V VGS = 3 V 100 1000 10000 0.003 006 0.009 0.012 0.015 0 2 04 06 08 0 1 0 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID - Drain Curr ent (A) 2nd line VGS = 4.5 V VGS = 10 V 100 1000 10000 0 1 22 43 64 86 0 Axis Title 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 2nd line VDS = 10 V, 15 V, 20 V ID = 10 A 100 1000 10000 120 150 012345 Ax is Title 1st line 2nd line 2nd line ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 2nd line TC = 25 °C TC =- 5 5 ° CTC = 125 °C 100 1000 10000 900 1800 3600 4500 0 6 12 18 24 30 Axis Title 1st line 2nd line 2nd line C - Cap acitance (pF) VDS - Drain-to-Source Volt age (V) 2nd line Crss Coss Ciss 100 1000 10000 0.6 0.8 1.2 1.4 1.6 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalize TJ - Junction Temperature (°C) 2nd line ID = 15 A VGS = 10 V VGS = 4.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

CTERISTICS (25 °C, unless otherwise noted) Source-Drain Di ode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 100 1000 10000 0.001 0.1 100 Axis Title 1st line 2nd line 2nd line IS - Source Current (A) VSD - Source-to-Drain Voltage (V) 2nd l ine TJ = 150 °C TJ = 25 °C 100 1000 10000 0.004 008 0.012 0.016 0.020 02468 1 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 2nd line TJ = 25 °C TJ = 125 °C ID = 15 A 100 1000 10000 -0.5 -0.2 0.4 0.7 1.0 -50 -25 0 25 50 75 100 125 150 Axis Title 1st line 2nd line 2nd line VGS(th) - Variance (V) TJ - Temperature (°C) 2nd line ID = 5 mA ID = 250 μA 100 1000 10000 120 150 .001 0.01 0.1 1 10 Axis Title 1st line 2nd line 2nd line Pow er (W) Time (s) 2nd line 100 1000 10000 0.01 0.1 1000 0.01 0.1 1 10 100 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) (1) VGS > minimum VGS at which RDS(on) is specified IDM limited Limited by RDS(on) (1) TA = 25 °C Single pulse BVDSS limited 100 ms 10 ms 1 ms 100 μs DC 10 s 1 s ID limited E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

CTERISTICS (25 °C, unless otherwise noted) Current Derating a Power, Junction-to-Ca se Power, Junction-to-Ambient Note a. The power dissipation P D is based on TJ max. = 150 °C, using junction -to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the cu rrent rating, when this rating falls below the package limit 100 1000 10000 6.4 12.8 25.6 32.0 0 3 06 09 0 1 2 0 1 5 0 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) TC - Case Temperature (°C) 2nd line 100 1000 10000 1.4 2.8 5.6 7.0 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line Pow er (W) TC - Case Temperature (°C) 2nd line 100 1000 10000 0.4 0.8 1.6 2.0 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line Pow er (W) TA - Ambient Temperature (°C) 2nd line E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

CTERISTICS (25 °C, unless otherwise noted) Normalized Th ermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case 100 1000 10000 0.01 0.1 0001 0.001 0.01 0.1 1 10 100 1000 Axis Title 1st line 2nd line Normalized Ef fective Transient Thermal Impedance Square Wave Pul se Duration (s) 2nd line 0.1 0.05 0.02 Single puls e Duty Cycle = 0.5 0.2 PDM 1. Duty cycle, D = 2. Per unit base = RthJA = 85 °C/W 3. TJM -T A = PDMZthJA (t) 4. Surface mounted Notes: 100 1000 10000 0.01 0.1 0001 0.001 0.01 0.1 1 10 Axis Title 1st line 2nd line Normalized Effectiv e Transient Thermal Impedance Square Wave Pul se Duration (s) 2nd line 0.1 0.05 0.02 Single puls e Duty Cycle = 0.5 0.2 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.2 5 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TPC8120 A ll data sheet.com