TPC8110

TPC8110_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −40 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS −40 V Drain-gate voltage (RGS = 20 kΩ) V DGR −40 V Gate-source voltage V GSS ±20 V DC (Note 1) I D −8 Drain current Pulsed(Note 1) I DP −32 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 59.4 mJ Avalanche current I AR −8 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55 to 150 °C Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −8 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) TPC8110 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current I DSS V DS = −40 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V − 40 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V − 25 ⎯ ⎯ V Gate threshold voltage V th V DS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −4.0 A ⎯ 27 35 Drain-source ON resistance R DS (ON) VGS = −10 V, ID = −4.0 A ⎯ 17 25 mΩ Forward transfer admittance |Y fs| V DS = −10 V, ID = −4.0 A 8 16 ⎯ S Input capacitance C iss ⎯ 2180 ⎯ Reverse transfer capacitance C rss ⎯ 275 ⎯ Output capacitance C oss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 330 ⎯ pF Rise time t r ⎯ 6.0 ⎯ Turn-ON time t on ⎯ 15 ⎯ Fall time t f ⎯ 30 ⎯ Switching time Turn-OFF time t off Duty <= 1%, tw = 10 µs ⎯ 115 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 48 ⎯ Gate-source charge 1 Q gs1 ⎯ 5.5 ⎯ Gate-drain (“miller”) charge Q gd VDD ∼− −32 V, VGS = −10 V, ID = −8 A ⎯ 12 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ −32 A Forward voltage (diode) V DSF I DR = −8 A, VGS = 0 V ⎯ ⎯ 1.2 V RL = 5 Ω VDD ∼− −20 V

0 VVGS

−10 V 4.7 Ω ID = −4 A VOUT

Forward transfer admittance |Y fs| (S) Drain-source voltage V DS (V) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Gate-source voltage V GS (V) VDS – VGS Drain current I D (A) |Yfs| – ID Drain current I D ( A ) Drain-source ON resistance RDS (ON) (m Ω) RDS (ON) – ID −2 −3 −4 −5 Common source VDS = −10 V Pulse test −20 −30 −40 −10 0 −1 100 Ta = −55°C −4 −8 −10 −12 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 0 −2 ID = −8.0 A −2.0 −4.0 −2 −3 −4 −5 Common source Ta = 25°C Pulse test −2.5 VGS = −2.25 V −20 −30 −40 −10 0 −1 −6−8 −2.75 −3.0 −3.5 −3.25 −10 −3.75 100 1000 300 500 −0.1 −1 −10 −50 Common source Ta = 25°C Pulse test VGS = −4 V −10 0.3 100 0.5 −0.1 −1 −10 −50 Common source VDS = −10 V Pulse test Ta = −55°C 100 25 0 −0.2 −0.4 −0.6 −0.8 −1 −10 Common source Ta = 25°C Pulse test −2.5 −4−10 VGS = −2.25 V −3.75 −2.75 −3.5 −3.25 −3.0

Case temperature Tc (°C) RDS (ON) – T c Drain-source ON resistance RDS (ON) (m Ω) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR ( A ) Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Case temperature Tc (°C) Vth – Tc Gate threshold voltage V th ( V ) Ambient temperature T c (°C) PD – Tc Drain power dissipation P D (W) Gate-source voltage V GS (V) Total gate charge Q g ( n C ) Dynamic Input/Output Characteristics Drain-source voltage V DS (V) −80 −40 0 40 120 160 80 VGS = −4 V Common source Pulse test −10 V −2.0/−4.0 A ID = 8.0 A −1.2 −80 −40 0 40 120 160 80 −0.4 −0.8 −1.6 Common source VDS = −10 V ID = −1 mA Pulse test 100 150 175 0.8 1.2 1.6 2.0 0.4 0 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) 25 75 125 VDS −40 0 20 40 Common source ID = −10 A Ta = 25°C Pulse test VDD = 32 V VGS −10 −20 −30 −10 −20 −30 −40 −16 −0.1 −1 −10 100 1000 Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss 3000 10000 300 500 −50 −0.3 −3 −30 5000 −5 −0.5 −0.1 −10 −100 0.4 0.8 1.2 1.6 −10 Common source Ta = 25°C Pulse test −1 VGS = 0 V, 1 V

rth − tw Safe Operating Area Pulse width t w (s) Drain-source voltage V DS (V) Normalized transient thermal impedance r th (°C/W) Drain current I D (A) 0.1 0.001 0.01 0.1 1 10 100 1000 100 1000 Single pulse (2) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) −0.1 −10 −100 −0.1 −1 −10 −100 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pulse)* 10 ms* 1 ms* VDSS max −0.3 −0.5 −30 −50

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