TPC8103 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSII) LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS Unit in mm SOP-8 NOTE BOOK PC 8 5 AAA A . ‘ gy) Ss @ Low Drain-Source ON Resistance : Rpg (ON) = 9.5m (Typ.) L |i zt @ High Forward Transfer Admittance : |Yf.| = 20S (Typ.) J} | * H,H 48 @ Low Leakage Current oes | oaeos : Ipgg = -10 vA (Max.) (Vpg = -30V) s fay] fENSE2B) @ Enhancement-Mode 5.5MAX a MAXIMUM RATINGS (Ta = 25°C) —s 4 CHARACTERISTIC SYMBOL | RATING | UNIT 2 S Drain-Source Voltage Vpss [| -30 | V_ | 423 sources 0520 Drain-Gate Voltage (Rgg = 20k) VDGR [ -30 | Vv | 5, 6, 7, 8 DRAIN Gate Souree Valtage Voss JEDEC = Loe |» | -1 | a] Drain Current De B [Pulse | Ipp | -44 | A | > —— TOSHIBA 2-6J1A Drain Power Dissipation* 24 w (Ta = 25°C) . Weight : 0.08 g (Typ.) Single Pulse Avalanche Energy CIRCUIT CONFIGURATION Avalanche Current Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Ambient*** | R¢h (ch-a) 1 2 3 4 Note ; * Repetitive rating ; Pulse Width Limited by Max. Junction temperature. Vpp = -24V, Teh = 25°C (initial), L = 1.0mH, Rg = 250, IaR = -11A * Drive operation ; Mount on glass epoxy board [1 inch? X 0.8t] (t = 10s) This transistor is an electrostatic sensitive device. Please handle with caution. 961001644 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges a5 set forth in the most recent ‘products specifications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-06-19 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Igss Vas = +16 V, Vpg = 0V | — | — [| +10] ZA | Drain Cut-Off Current Ipss__[Vps = —30V, Vag = 0V [| — | — | -10] ZA | Drain-Source Breakdown V (BR) DSS|Ip = —10 mA, Veg = 0V [-30/ — |— [Vv | Voltage Vee) Dsx)Ip = =10mA, Veg=20V | -15[ — | — |v Gate Threshold Voltage Vps = -10V, Ip = -—1mA [-08| — |[-20[ v_ | . . Rps (on) [Vas = =4V,Ip=-5.5A | — | 185] 23] ma | Drain-Source ON Resistance Rps on) [Vas = —10V, Ip = —5.5A L— [95] 13| mo | Forward Transfer Admittance | [Y¢al Vps=—10V,Ip=-55A | 10[ 20/ — [ Ss | Input Capacitance - _ | — | 2700 | — | Reverse Transfer Capacitance pps ME 10V, Vas = OV, [| — | 600| — | pF Output Capacitance — 2 | — | 1000] — | Ip = -5.5A -10V Vout Turn-On Time RL = Switching fron tine | ton | Ss 230 |- | | - | Time vi Fal Time i BEE Vpp = -15V VIN : tr, t¢ <5 ns Tarn Of Time Duty 214, tw = 10ns | = |] = | Total Gate Charge (Gate- Q Source Plus Gate-Drain) id Vpp = -24V, Vag = -11V Gate-Souree Charge Ip=-11A [=| #T— |} *° Gate-Drain Willer") Charge Sos SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Continuous Drain Reverse fret | mR Lf] | Pulse Drain Reverse Cumrent_| Ipgp | =| = | = | =| A_| Diode Forward Voltage VpsF_|Ipr = —11A, Vgg =0V [| — | —] 12[ v | MARKING Hoan * Lot Number TYPE TPCB103 |e Month (Starting from Alphabet A) a Year (Last Number of the Christian Era) 2000-06-19 2/5
20, Ip — Vps 50 Ip - VpDs ~ ima: Z J = i [] TT) enon ATES [eons sone
5 HAYA Z_ | 4 5 CMY Zs | TTT
= LMS eT | 2 AML AKT TT Z WY Z| | | e We | W747 ees a) Zane | || z Wo iv 2 WE |
2 Be Wess 250 | eee ee
\\f par | fauageene| | Fa wrt i tt fee 2 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Vas Vps — VGs 28; —0.7 a Coo 3 a 2S © ere eee ees - « Cente ee a a) 8 CCNCC CCC eg a a 8 CCAR ae a BIN NT an SSeS a BO TRSo = na gee LEE eee ge 8 OAS SSS GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) Yee) — I Rps (on) - ID 3 —_ fl Dn . “Tenromm HTT Bo afteceer eee Fg eee I z Ee gE pf Heer 8 ee Pg ze oof} vos = av be IIL ear LIT Be 7.96 8 Et poy oe a a | UU TTT A a a TT a DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) F000 85
Rps(ON) — Te Ipr - Vps FEE Teme] eA s st toooeeer 5 OT Sete HHS Za BE e -wp fA 411 A_——— ge 4 A [HY tT ef gee RARER s 1 T] Cee 8 oe a3 LH vos ev} | ooo ge 4, | | seer tl 2 WW y i gOS To ae ET € of LEE ee re es ee ee a eee = ata fee LT 2 -osf 1s = ov oso -40 0 40 80 120 160 vo OO Sa CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vps Vth — Te 10000 — 5 74 SSee EE eee ge 5000 i 3 -20 Ip= —-1mA Fo CE te } ttf tt tt eo) CLT aaa | gS) |) VEPEERREECES a ll | S r~ PI | en Fa Pit ee ye ey Ps} < TSS -0.8] 5 soo! common source |-L IT = I-I e {|i} Ti titty yy Yas = -10¥ LT TTT TY E -f ff <1 Mee g tooL_Te = 28°C PT 8 a —O1 -08 -1 “8 -10 80 -80 400 40 30 +120 ~~+160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) P 7 DYNAMIC INPUT/OUTPUT Dp - Ta CHARACTERISTICS 2.507 —25) -25 s FALL TT I Line 08 5 Awe | | COMMON soURCE ¢ z bein | BOARD eT |=" ~ s Ble RPEEE TT) gy APE re Tag s FR LIN | | yyy es -ATTTTTeri Ts A JINN TTT TY 3 nt Honey 0 eg LT TN ALE ETI Be LIVE A me 5 of +t TINA Bopitie tet ets Nee 2 [AY TTT TT tty § a Litit | it ff VW |N+ +4 tt, 0 40 80 120 160 200 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (°C) TOTAL GATE CHARGE Qg (nC) 2000-06-19 4/5
Tth — tw Ee ae aae | 0.8t) Be Tee el
8 Ea en
5 LLM TIN ante
04 ET lL a a
PULSE WIDTH tw (s) SAFE OPERATING AREA Eas - Tech ~ \\ N 2 ee NEE = *froustup on NX iN B™NPLPPLLLeLeLl 3h ~': Cir Tn a § _, [sotto dina oa cu oN g [BOARD (inch? x08) IN, LUE a a KSEE
7 SSS a EH
8 ~05-=EH PC ovsnanion PSSNEA HH 2 FPP NELLEL, gpa NET | eS a -01 * NONREPETITIVE PULSE LIN < PSE - ree ana feesst ees wena 3 wo
0.51 Curves must be derated Ft 25 30 75
DRAIN-SOURCE VOLTAGE Vpg (V) 3t Bypss ov TAR | \\ “s 4 | hb Vpp /% \\|_ vps a \\ — TEST CIRCUIT WAVE FORM = = 1 Bypss von Re ros ® Bas = 2 bP (aypss - Vpp? 9000-06-19 5/5