TPC8021-H

TPC8021-H TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications

• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 3.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 13.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| =19 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 11 Drain current Pulsed (Note 1) I DP 44 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 79 mJ Avalanche current I AR 11 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.14 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 11 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on the lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) TPC8021 H Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current I DSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 5.5 A ⎯ 18.5 25 Drain-source ON-resistance R DS (ON) VGS = 10 V, ID = 5.5 A ⎯ 13.5 17 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 5.5 A 10 19 ⎯ S Input capacitance C iss ⎯ 640 ⎯ Reverse transfer capacitance C rss ⎯ 75 ⎯ Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 300 ⎯ pF Rise time t r ⎯ 4 ⎯ Turn-on time t on ⎯ 8 ⎯ Fall time t f ⎯ 4 ⎯ Switching time Turn-off time t off Duty <= 1%, tw = 10 µs ⎯ 18 ⎯ ns VDD ∼− 24 V, VGS = 10 V, ID = 11 A ⎯ 11 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 24 V, VGS = 5 V, ID = 11 A ⎯ 6.3 ⎯ Gate-source charge 1 Q gs1 ⎯ 2.2 ⎯ Gate-drain (“Miller”) charge Q gd ⎯ 2.6 ⎯ Gate switch charge Q SW VDD ∼− 24 V, VGS = 10 V, ID = 11A ⎯ 3.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 44 A Forward voltage (diode) V DSF I DR = 15 A, VGS = 0 V ⎯ ⎯ −1.2 V RL = 2.7Ω VDD ∼− 15 V 0 V VGS 10 V 4.7 Ω ID = 5.5 A VOUT

0.1 1 10 100 100 Forward transfer admittance |Y fs| (S) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Drain current I D (A) Drain current I D (A) Drain-source ON-resistance RDS (ON) ( m Ω) Ta = −55°C Common source VDS = 10 V Pulse test 0.1 1 10 100 100 Common source Ta = 25°C Pulse test VGS = 10 V 4.5 0.1 Common source VDS = 10 V Pulse test |Yfs| – ID RDS (ON) – ID Drain-source voltage V DS (V) Gate-source voltage V GS (V) VDS – VGS 0.0 0.2 0.3 0.4 0 2 4 6 8 10 ID = 11 A 0 1 3 4 5 Common source Ta = 25°C Pulse test 0.1 5.5 100 100 Ta = −55°C 2.8 Drain-source voltage V DS (V) ID – VDS Drain-source voltage V DS (V) ID – VDS Drain current I D ( A ) Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test 0 2 4 6 10 10 3.2 0 4 8 12 16 VGS = 2.5 V 2.9 2.7 3.0 2.8 3.54 8 20 3.0 VGS = 2.4 V 2.6 8 5 3.5 4 6 2.9 2.8 2.7 4.5 3.1 3.2 3.3 8 Drain current I D ( A )

Capacitance – VDS Capacitance C (pF) Ambient temperature Ta ( °C) Vth – Ta Gate threshold voltage V th (V) Gate-source voltage V GS (V) Total gate charge Q g (nC) Dynamic input/output characteristics Drain-source voltage V DS (V) 0.0 −80 −40 0 40 80 120 160 0.4 0.8 1.6 Common source VDS = 10 V ID = 1 mA Pulse test 0 4 12 20 VDD = 6 V 24 V Common source ID = 11 A Ta = 25°C Pulse test VDS 0.1 1 10 100 1000 10000 Common source Ta = 25°C f = 1 MHz VGS = 0 V Ciss Coss Crss 1.2 2.0 100 Drain-source voltage V DS (V) 16 8 12 V Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( m Ω) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) −80 −40 0 40 80 120 160 VGS = 4.5 V VGS = 10 V ID = 2.8A,5.5A,11A ID = 2.8A,5.5A,11A Common source Pulse test 100 Common source Ta = 25°C Pulse test VGS = 0 V 4.5 −1.0 0.4 0.8 1.6 0 40 80 120 160 1.2 2.0 (1) (2) Ambient temperature Ta ( °C) PD – Ta Drain power dissipation P D (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s

0.1 100 0.1 1 10 100 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 (1) (2) 10 ms * t =1 ms * Safe operating area Drain-source voltage V DS (V) Drain current I D (A) rth − tw Pulse width t w (s) Transient thermal impedance r th ( ° C / W ) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) ID MAX (Pulse) * VDSS MAX *: Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Single - pulse