TPC8020-H

TPC8020-H_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications

• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 6.9 nC (typ.)
• Low drain-source ON- resistance: RDS (ON) = 6.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| =32 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 13 Drain current Pulsed (Note 1) I DP 52 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 110 mJ Avalanche current I AR 13 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.084 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 13 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on the lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) TPC8020 H Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current I DSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 6.5 A ⎯ 9.5 13 Drain-source ON-resistance R DS (ON) VGS = 10 V, ID = 6.5 A ⎯ 6.8 9 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 6.5 A 16 32 ⎯ S Input capacitance C iss ⎯ 1395 ⎯ Reverse transfer capacitance C rss ⎯ 140 ⎯ Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 525 ⎯ pF Rise time t r ⎯ 3 ⎯ Turn-on time t on ⎯ 9 ⎯ Fall time t f ⎯ 8 ⎯ Switching time Turn-off time t off Duty <= 1%, tw = 10 µs ⎯ 29 ⎯ ns VDD ∼− 24 V, VGS = 10 V, ID = 13 A ⎯ 23 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 24 V, VGS = 5 V, ID = 13 A ⎯ 13 ⎯ Gate-source charge 1 Q gs1 ⎯ 4.5 ⎯ Gate-drain (“Miller”) charge Q gd ⎯ 4.9 ⎯ Gate switch charge Q SW VDD ∼− 24 V, VGS = 10 V, ID = 13 A ⎯ 6.9 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 52 A Forward voltage (diode) V DSF I DR = 13 A, VGS = 0 V ⎯ ⎯ −1.2 V RL = 2.3Ω VDD ∼− 15 V 0 V VGS 10 V 4.7 Ω ID = 6.5 A VOUT

VGS = 2.7V 2.9 4.5 3.2 3.1 3.3 3.5 0 0.2 0.4 0.6 0.8 1 0.1 1 10 100 100 0.12 0.16 0.2 0 2 4 6 8 10 0.08 0.04 0 1 2 3 6 4 5 2.9 VGS = 2.6V 2.8 3.1 3.2 3.5 Common source Ta = 25°C Pulse test VGS = 10 V 4.5 Common source Ta = 25°C Pulse test 100 Ta = −55°C Common source VDS = 10 V Pulse test Ta = −55°C 100 Common source VDS = 10 V Pulse test Drain-source voltage V DS (V) ID – VDS Drain current I D ( A ) Drain current I D (A) RDS (ON) – ID Drain-source ON-resistance RDS (ON) ( m Ω) Drain current I D (A) ⎪Yfs⎪ – ID Forward transfer admittance |Y fs| (S) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Drain-source voltage V DS (V) Gate-source voltage V GS (V) VDS – VGS ID = 13 A 3.3 6.5 Common source Ta = 25 °C Pulse test 0 0.8 1.2 0.4 1.6 2 Common source Ta = 25°C Pulse test 0.1 100 0.1 1 100 10

1.2 1.6 160 0.8 0.4 (1) (2) 160 −40 0 40 80 120 −80 −0.2 100 −0.6 −0.8 −1.0−0.4 0.1 100 1000 10000 1 10 100 0 8 24 32 40 Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) ソース接地 VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) VGS = 0 V 4.5 Common source Ta = 25° C Pulse test Gate threshold voltage V th (V) Ambient temperature Ta ( °C) Vth – Ta Common source VDS = 10 V ID = 1 mA Pulse test Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( m Ω) ID = 13A VGS = 10 V VGS = 4.5 V ID = 3.5A,6.5A,13A 3.5A,6.5A Common source Pulse test Total gate charge Q g (nC) Drain-source voltage V DS (V) Dynamic input/output characteristics Gate-source voltage V GS ( V ) 0.5 1.5 −80 −40 0 40 80 120 160 2.5 Ambient temperature Ta ( °C) PD – Ta Drain power dissipation P D ( W ) (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s VDD = 6 V VDS VGS Common source ID = 13 A Ta = 25°C Pulse test 12 V 24 V

Pulse width t w ( s ) Transient thermal impedance r th ( ° C / W ) Drain current I D ( A ) Drain-source voltage V DS (V) Safe operating area 100 0.1 10 1 0.1 100 rth – tw rth – tw 0.001 100 1000 0.01 0.1 1 10 100 1000 0.1 (2) (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) VDSS max t =1ms * 10ms * ID max (Pulse) * Single - pulse * Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature.