TPC8020-H TOSHIBA | Alldatasheet
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Technical content
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High -Speed U-MOSIII) TPC8020-H High-Speed and High-Efficiency DC-DC Converter
Applications
Portable Equipment Applications
- Small footprint due to small and thin package
- High-speed switching
- Small gate charge: Qg = 23 nC (typ.)
- Low drain-source ON resistance: RDS (ON) = 6.8 mO (typ.)
- High forward transfer admittance: |Yfs| =32 S (typ.)
- Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 13 Drain current Pulsed (Note 1) IDP 52 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 110 mJ Avalanche current IAR 13 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.084 mJ Channel temperature Tch 150 °C Storage temperature range Tstg − 55 to 150 °C Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ? JEITA ? TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 6 1 2 3 7 5
Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch -a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch -a) 125 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω , IAR = 13 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) TPC8020 H Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = − 20 V 15 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 2.3 V VGS = 4.5 V, ID = 6.5 A 9.5 13 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6.5 A 6.8 9 mΩ Forward transfer admittance |Yfs | VDS = 10 V, ID = 6.5 A 16 32 S Input capacitance Ciss 1395 Reverse transfer capacitance Crss 140 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 525 pF Rise time tr 3 Turn-ON time ton 9 Fall time tf 8 Switching time Turn-OFF time toff Duty ns VDD ∼ − 24 V, VGS = 10 V, ID = 13 A 23 Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 5 V, ID = 13 A 13 Gate-source charge 1 Qgs1 4.5 Gate-drain (“miller”) charge Qgd 4.9 Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 13 A 6.9 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP 52 A Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V − 1.2 V RL = 2.3Ω VDD ∼ − 15 V 0 V VGS 10 V 4.7 Ω ID = 6.5 A VOUT
VGS = 2.7V 2.9 4.5 3.2 3.1 3.3 3.5 0 0.2 0.4 0.6 0.8 1 0.1 100 100 0.12 0.16 0.2 0.08 0.04 2.9 VGS = 2.6V 2.8 3.1 3.2 3.5 COMMON SOURCE Ta = 25°C PULSE TEST VGS = 10 V 4.5 COMMON SOURCE Ta = 25°C PULSE TEST 100 Ta = − 55°C COMMON SOURCE VDS = 10 V PULSE TEST Ta = − 55°C 100 COMMON SOURCE VDS = 10 V PULSE TEST DRAIN-SOURCE VOLTAGE VDS (V) ID – VDS DRAIN CURRENT I D (A) DRAIN CURRENT ID (A) RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω ) DRAIN CURRENT ID (A) Yfs – ID FORWARD TRANSFER ADMITTANCE Yfs (S) DRAIN-SOURCE VOLTAGE VDS (V) ID – VDS DRAIN CURRENT I D (A) GATE-SOURCE VOLTAGE V GS (V) ID – VGS DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V) VDS – VGS ID = 13 A 3.3 6.5 COMMON SOURCE Ta = 25 PULSE TEST 0 0.8 1.2 0.4 1.6 2 COMMON SOURCE Ta = 25°C PULSE TEST 0.1 100 0.1 1 100
1.2 1.6 160 0.8 0.4 (1) (2) 160 − 40 0 40 80 120 − 80 − 0.2 100 0.1 100 1000 10000 1 10 100 0 8 24 32 40 DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS CAPACITANCE C (pF) VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss COMMON SOURCE VGS = 0 V f = 1 MHz Ta = 25°C DRAIN-SOURCE VOLTAGE VDS (V) IDR – VDS DRAIN REVERSE CURRENT IDR (A) VGS = 0 V 4.5 COMMON SOURCE Ta = 25°C PULSE TEST GATE THRESHOLD VOLTAGE Vth ( V) AMBIENT TEMPERATURE Ta (°C) Vth – Ta COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST AMBIENT TEMPERATURE Ta (°C) RDS (ON) – Ta DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω ) ID = 13A VGS = 10 V VGS = 4.5 V ID = 3.5A,6.5A,13A 3.5A,6.5A COMMON SOURCE PULSE TEST TOTAL GATE CHARGE Q g (nC) DRAIN POWER DISSIPATION PD (W) DYNAMIC INPUT / OUTPUT CHARACTERISTICS DRAIN-SOURCE VOLTAGE VDS (V) 0.5 1.5 − 80 − 40 0 40 80 120 160 2.5 AMBIENT TEMPERATURE Ta ( °C) PD – Ta DRAIN POWER DISSIPATION PD (W) (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) 10s VDD = 6 V VDS VGS COMMON SOURCE ID = 13 A Ta = 25°C PULSE TEST 12 V 24 V
PULSE WIDTH t w (s) TRANSIENT THERMAL IMPEDANCE rth (/W) DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE VDS (V) SAFE OPERATING AREA 100 0.1 10 1 0.1 100 rth – tw rth – tw 0.001 100 1000 0.01 0.1 1 10 100 1000 0.1 (2) (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) SINGLE PULSE VDSS max t=1ms t=10ms ID max (PULSED) * ¦SINGLE NONREPETITIVE PULSE Tc=25 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE.
- The information contained herein is subject to change without notice.
- The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
- TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is t he responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precau tions and conditions set forth in the “ Handling Guide for Semiconductor Devices, ” or “TOSHIBA Semiconductor Reliability Handbook” etc..
- The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfu nction or failure of which may cause loss of human life or bodily injury ( “Unintended Usage ”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
- TOSHIBA products should not be embedded to the downstream products which ar e prohibited to be produced and sold, under any law and regulations. 030619EAA RESTRICTIONS ON PRODUCT USE