TPC8016-H TOSHIBA | Alldatasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U -MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
- Small footprint due to small and thin package
- High speed switching
- Small gate charge: Qg = 48 nc (typ.)
- Low drain-source ON resistance: RDS (ON) = 3.7 mO (typ.)
- High forward transfer admittance: |Yfs| = 25 S (typ.)
- Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
- Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 15 Drain current Pulsed (Note 1) IDP 60 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 146 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg − 55 to 150 °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ? JEITA ? TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 6 1 2 3 7 5
Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch -a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch -a) 125 °C/W Marking (Note 5) Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω , IAR = 15 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on lower left of the marking indicates Pin 1. Type TPC8016 H (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Lot No.
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = − 20 V 15 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 2.3 V VGS = 4.5 V, ID = 7.5 A 5.5 7.5 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 7.5 A 3.7 5.7 mΩ Forward transfer admittance |Yfs | VDS = 10 V, ID = 7.5 A 12.5 25 S Input capacitance Ciss 2380 Reverse transfer capacitance Crss 410 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 980 pF Rise time tr 9.8 Turn-ON time ton 21 Fall time tf 15 Switching time Turn-OFF time toff Duty ns VDD ∼ − 24 V, VGS = 10 V, ID = 15 A 46 Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 5 V, ID = 15 A 26 Gate-source charge 1 Qgs1 7.2 Gate-drain (“miller”) charge Qgd 12.2 Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 15 A 15.6 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP 60 A Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V − 1.2 V RL = 2 Ω VDD ∼ − 15 V 0 V VGS 10 V 4.7 Ω ID = 7.5 A VOUT
ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs | – ID RDS (ON) – ID Forward transfer admittance Yfs (S) Drain-source voltage V DS (V) Drain-source voltage V DS (V) Drain cur rent I D (A) Drain-source voltage V DS (V) Drain current I D (A) Gate-source voltage V GS (V) Drain current I D (A) Gate-source voltage V GS (V) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) (m Ω ) 0 1 2 3 6 Common source VDS = 10 V Pulse test 4 5 100 Ta = − 55°C 0.1 1 10 30 0.1 100 Ta = − 55°C 100 Common source VDS = 10 V Pulse test Common source Ta = 25°C, pulse test VGS = 2.7 V 3.0 3.2 3.1 3.05 4.5 3.15 2.8 2.9 3.5 4.5 0.8 1.2 1.6 2.0 Common source Ta = 25°C, pulse test 0 0.4 3.2 3.1 3.0 VGS = 2.8 V 3.3 3.5 2.9 0 2 6 8 12 10 4 0.6 0.8 0.2 0.4 ID = 15 A 7.5 3.8 Common source Ta = 25°C Pulse test 0.1 1 10 100 Common source Ta = 25°C Pulse test 100 VGS = 4.5 V
RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta PD – Ta Dynamic input/output characteristics Drain power dissipation P D (W) Gate threshold voltage V th (V) Ambient temperature Ta ( °C) Drain-source ON resistance RDS (ON) (m Ω ) Drain-source voltage V DS (V) Drain-source voltage V DS (V) Capacitance C (pF) Ambient temperature Ta ( °C) Ambient temperature Ta ( °C) Drain-source voltage V DS (V) Gate-source voltage V GS (V) Total gate charge Q g (nC) Drain reverse current I DR (A) 0.4 0.8 1.2 1.6 50 100 150 200 (1) Device mounted on a glass -epoxy board (a) (Note 2a) (2) Device mounted on a glass -epoxy board (b) (Note 2b ) t = 10 s (1) (2) 0.1 100 5 10 Common source Ta = 25°C Pulse test VGS = 0 V − 80 − 40 0 40 80 160 120 1.5 2.5 0.5 Common source VDS = 10 V ID = 1 mA Pulse test 0.1 1 10 100 100 1000 10000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C 0 10 20 30 Common source Ta = 25°C ID = 15 A Pulse test VGS VDD = 24 V 40 50 60 VDS VDD = 24 V − 80 − 40 0 40 80 160 120 Common source Pulse test VGS = 4.5 V
Drain-source voltage V DS (V) Drain current I D (A) Safe operating area Pulse width t w (S) rth − tw Normalized transient thermal impedance rth ( °C/W) 0.01 0.01 0.1 1 10 100 0.1 100 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (plused) * 10 ms* 1 ms* VDSS max 0.1 0.001 0.01 0.1 10 100 1000 100 1000 Single pulse (2) (1) Device mounted on a glass -epoxy board (a) (Note 2a) (2) Device mounted on a glass -epoxy board (b) (Note 2b) t = 10 s (1)
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