TPC8014

TPC8014_07 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 11 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 11 Drain current Pulse (Note 1) I DP 44 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 157 mJ Avalanche current I AR 11 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.08 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 11 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) TPC8014 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current I DSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 5.5 A ⎯ 15 22 Drain-source ON resistance R DS (ON) VGS = 10 V, ID = 5.5 A ⎯ 11 14 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 5.5 A 5 10 ⎯ S Input capacitance C iss ⎯ 1860 ⎯ Reverse transfer capacitance C rss ⎯ 270 ⎯ Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 320 ⎯ pF Rise time t r ⎯ 9 ⎯ Turn-ON time t on ⎯ 19 ⎯ Fall time t f ⎯ 20 ⎯ Switching time Turn-OFF time t off Duty <= 1%, tw = 10 µs ⎯ 69 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 39 ⎯ Gate-source charge 1 Q gs1 ⎯ 4 ⎯ Gate-drain (“miller”) charge Q gd VDD ∼− 24 V, VGS = 10 V, ID = 11 A ⎯ 9 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 44 A Forward voltage (diode) V DSF I DR = 11 A, VGS = 0 V ⎯ ⎯ −1.2 V RL = 2.7 Ω VDD ∼− 15 V 0 V VGS 10 V 4.7 Ω ID = 5.5 A VOUT

0.6 0.8 0.2 0.4 ID = 11A 5.5 2.5 Common source Ta = 25°C Pulse test 12 16 ID – VDS Drain-source voltage V DS ( V ) Drain current I D ( A ) 3.5 0 1 2 3 4 5 VGS = 2.6 V 3.0 3.2 3.1 2.7 2.9 2.8 3.3 3.4 ID – VDS Drain-source voltage V DS ( V ) Drain current I D (A) 3.4 0.4 0.6 0.8 1.0 00 . 2 VGS = 2.5 V 2.6 2.7 2.8 2.9 3.0 3.1 3.210 3.3 ID – VGS Gate-source voltage V GS (V) Drain current I D ( A ) 0 0.5 1 1.5 4 Common source VDS = 10 V Pulse test 100 Ta = −55°C 2.5 2.5 VDS – VGS Drain-source voltage V DS (V) Gate-source voltage V GS (V) |Yfs| – ID Forward transfer admittance ⎪Yfs⎪ (S) Drain current I D ( A ) RDS (ON) – ID Drain current I D ( A ) Drain-source ON resistance RDS (ON) (m Ω) 1 3 30 100 Common source Ta = 25°C Pulse test 100 VGS = 10 V VGE = 4.5 V 100.1 1 10 100 Common source VDS = 10 V Pulse test Tc = 100°C −55°C 25°C

−80 −40 0 40 80 160 120 Common source Pulse test VGS = 4.5 V RDS (ON) – Ta (α) Ambient temperature Ta (°C) Drain-source ON resistance RDS (ON) ( Ω) IDR – VDS Drain-source voltage V DS (V) Drain reverse current I DR ( A ) Vth – Ta Ambient temperature Ta (°C) Gate threshold voltage V th (V) Capacitance – VDS Drain-source voltage V DS (V) Capacitance C (pF) PD – Ta Drain power dissipation P D (W) Ambient temperature Ta (°C) 0.4 0.8 1.2 1.6 50 100 150 200 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) Dynamic input/output characteristics Drain-source voltage V DS (V) Gate-source voltage V GS ( V ) Total gate charge Q g ( n C ) 0.1 1 10 100 100 1000 10000 Crss Coss Ciss Common source VGS = 10 V ID = 1 mA Pulse test 0.1 100 Common source Ta = 25°C Pulse test 3 1 VGS = 10 V −80 −40 0 40 80 120 Common source VDS = 10 V ID = 1 mA Pulse test 0.5 1.5 2.5 01 0 2 0 3 0 Common source Ta = 25°C ID = 11 A Pulse test VDS VDD = 24 V 40 50 60 VDD = 24 V

Pulse width t w (S) rth − tw Normalized transient thermal impedance rth ( ° C / W ) 0.1 0.001 0.01 0.1 10 100 1000 100 1000 Single pulse (2) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) Drain-source voltage V DS ( V ) Drain current I D ( A ) Safe operating area 0.01 0.01 0.1 1 10 100 0.1 100 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pluse) * 10 ms* 1 ms* VDSS max

• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and relia bility of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE