TPC8013-H

TPC8013-H_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Ty pe (High-speed U-MOS III) TPC8013-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications

• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: Q SW = 15.6 nc (typ.)
• Low drain-source ON-resistance: RDS (ON) = 5.4 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 25 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D 15 Drain current Pulse (Note 1) I DP 60 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 146 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) R th (ch-a) 125 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a ) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 15 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) TPC8013 H Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 7.5 A ⎯ 6.6 9.5 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 7.5 A ⎯ 5.4 6.5 mΩ Forward transfer admittance |Yfs| V DS = 10 V, ID = 7.5 A 12.5 25 ⎯ S Input capacitance Ciss ⎯ 2380 ⎯ Reverse transfer capacitance Crss ⎯ 410 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 980 ⎯ pF Rise time tr ⎯ 9.8 ⎯ Turn-on time ton ⎯ 21 ⎯ Fall time tf ⎯ 15 ⎯ Switching time Turn-off time toff Duty < = 1%, tw = 10 μs ⎯ 60 ⎯ ns VDD ∼ − 24 V, VGS = 10 V, ID = 15 A ⎯ 46 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 5 V, ID = 15 A ⎯ 26 ⎯ Gate-source charge 1 Qgs1 ⎯ 7.2 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 12.2 ⎯ Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 15 A ⎯ 15.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 60 A Forward voltage (diode) VDSF I DR = 15 A, VGS = 0 V ⎯ ⎯ −1.2 V RL = 2 Ω VDD ∼ − 15 V 0 V VGS 10 V 4.7 Ω ID = 7.5 A VOUT

ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Forward transfer admittance |Y fs| (S) Drain-source voltage V DS (V) Drain-source voltage V DS (V) Drain current I D ( A ) Drain-source voltage V DS (V) Drain current I D ( A ) Gate-source voltage V GS (V) Drain current I D ( A ) Gate-source voltage V GS (V) Drain current I D ( A ) Drain current I D ( A ) Drain-source ON-resistance RDS (ON) (m Ω)

10 Common source

Ta = 25°C, pulse test VGS = 2.4 V 2.65 2.9 2.75 2.7 4.5 2.8 2.5 2.6 0.8 1.2 1.6 2.0 Common source Ta = 25°C, pulse test 00 . 4 10 4.5 2.9 2.8 2.7 2.6 VGS = 2.4 V 3.1 2.5 0 1 2 3 6 Common source VDS = 10 V Pulse test 4 5 100 Ta = −55°C 02 68 1 2 10 4 0.6 0.8 0.2 0.4 ID = 15 A 7.53.8 Common source Ta = 25°C Pulse test 0.1 1 10 30 0.1 100 Ta = −55°C 100 Common source VDS = 10 V Pulse test 0.1 1 10 100 Common source Ta = 25°C Pulse test 100 VGS = 4.5 V

RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta PD – Ta Dynamic input/output characteristics Drain power dissipation P D (W) Gate threshold voltage V th (V) Ambient temperature Ta (°C) Drain-source ON-resistance RDS (ON) ( m Ω) Drain-source voltage V DS (V) Drain-source voltage V DS (V) Capacitance C (pF) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Drain-source voltage V DS (V) Gate-source voltage V GS (V) Total gate charge Q g (nC) Drain reverse current I DR (A) 0.4 0.8 1.2 1.6 50 100 150 200 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) 0.1 100 510 Common source Ta = 25°C Pulse test VGS = 0 V −80 −40 0 40 80 160 120 1.5 2.5 0.5 Common source VDS = 10 V ID = 1 mA Pulse test 0.1 1 10 100 100 1000 10000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C −80 −40 0 40 80 160 120 Common source Pulse test ID = 15, 7.5, 3.8 ID = 15, 7.5, 3.8 VGS = 4.5 V 0 2 0 Common source Ta = 25°C ID = 15 A Pulse test VGS VDD = 24 V 40 60 VDS VDD = 24 V

Drain-source voltage V DS (V) Drain current I D ( A ) Safe operating area Pulse width t w ( S ) rth − tw Normalized transient thermal impedance rth ( ° C / W ) 0.01 0.01 0.1 1 10 100 0.1 100 * Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * 10 ms* t =1 ms* VDSS max 0.1 0.001 0.01 0.1 10 100 1000 100 1000 Single - pulse (2) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1)

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.