TPC8012-H

TPC8012-H_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) TPC8012-H Switching Regulator Applications DC／DC Converter Applications

• Low drain-source ON-resistance: R DS (ON) = 0.28 Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.35 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 kΩ) VDGR 200 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 1.8 Drain current Pulse (Note 1) I DP 7.2 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 2.05 mJ Avalanche current IAR 1.8 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) R th (ch-a) 125 °C/W Marking (Note 5) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a ) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 1.8 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) TPC8012 H Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS V DS = 200 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON-resistance RDS (ON) V GS = 10 V, ID = 0.9 A ⎯ 0.28 0.40 Ω Forward transfer admittance |Yfs| V DS = 10 V, ID = 0.9 A 0.65 1.35 ⎯ S Input capacitance Ciss ⎯ 440 ⎯ Reverse transfer capacitance Crss ⎯ 80 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 260 ⎯ pF Rise time tr ⎯ 23 ⎯ Turn-on time ton ⎯ 28 ⎯ Fall time tf ⎯ 22 ⎯ Switching time Turn-off time toff Duty ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 11 ⎯ Gate-source charge 1 Qgs ⎯ 6 ⎯ Gate-drain (“Miller”) charge Qgd VDD ∼ − 160 V, VGS = 10 V, ID = 1.8 A ⎯ 5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ 7.2 A Forward voltage (diode) VDSF I DR = 1.8 A, VGS = 0 V ⎯ ⎯ −1.5 V RL = 111 Ω VDD ∼ − 100 V 0 V VGS 10 V 50 Ω ID = 0.9 A VOUT

0.01 0.1 1 10 0.1 VGS = 10 V 0.1 1 10 100 0.1 100 Ta = −55°C 0.6 0.8 1.0 0 3 6 9 12 15 ID = 1.8 A 0.2 0.9 0.45 0.4 Ta = −55°C 0 2 6 8 10 100 0 4 8 12 16 VGS = 5 V 6.6 7.615 7.3 0 1 2 3 5 7.6 8 10 7.3 7.0 6.6 Forward transfer admittance |Y fs| (S) Gate-source voltage V GS ( V ) ID – VGS Drain current I D (A) Drain current I D (A) Drain current I D (A) Drain-source ON-resistance RDS (ON) ( Ω) Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test |Yfs| – ID RDS (ON) – ID Drain-source voltage V DS (V) Gate-source voltage V GS ( V ) VDS – VGS Common source Ta = 25°C Pulse test Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test

0.4 0.8 1.6 0 40 80 120 160 1.2 2.0 (1) (2) 0 4 12 20 120 160 200 VDD = 40 V 160 V VDS 16 8 80 V −80 −40 0 40 80 120 160 1.0 2.0 4.0 3.0 5.0 0.1 1 10 100 1000 10000 Ciss Coss Crss 100 VGS = 0 V 0.1 4.5 −1.0 −80 −40 0 40 80 120 160 0.2 0.4 0.6 VGS = 10 V ID = 2.8A,5.5A,11A 0.8 Capacitance – VDS Capacitance C (pF) Ambient temperature Ta ( °C) Vth – Ta Gate threshold voltage V th (V) Gate-source voltage V GS ( V ) Total gate charge Q g ( n C ) Dynamic input/output characteristics Drain-source voltage V DS (V) Common source VDS = 10 V ID = 1 mA Pulse test Common source ID = 1.8 A Ta = 25°C Pulse test Common source Ta = 25°C f = 1 MHz VGS = 0 V Drain-source voltage V DS (V) Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source ON-resistance RDS (ON) ( Ω) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) Common source Pulse test Common source Ta = 25°C Pulse test Ambient temperature Ta ( °C) PD – Ta Drain power dissipation P D (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s

0.01 0.1 0.1 1 10 100 10 ms * t =1 ms * 1000 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 (1) (2) Safe operating area Drain-source voltage V DS (V) Drain current I D (A) rth− tw Pulse width t w (s) Transient thermal impedance r th ( ° C / W ) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) Single - pulse ID MAX (Pulse) * VDSS MAX * Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature.

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
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