TPC8006-H | DigiCamel IC Datasheet

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U-MOSII) TPC8006-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS. NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 e High Speed Switching : 60% speed up gy Ss (compare with current type) OD q 3 © Small Gate Charge: Qg = 16 nC (Typ.) ia oe —t Low Drain-Source ON Resistance : RD§(ON) = 19m (Typ.) | e@ High Forward Transfer Admittance : |Y¢s| = 8.8S (Typ.) [127] © Low Leakage Current : Ipgg = 10 «A (Max.) (Vpg = 30 V) S5MAX © Enhancement-Mode —: Vth = 1.8~2.5 V (Vpg = 10 V, Ip = 1mA) sos02 | MAXIMUM RATINGS (Ta = 25°C) ae 33 CHARACTERISTIC SYMBOL UNIT | og 3 1270.1 ad Drain-Source Voltage Vpss_ | 30 | Vi 3 osso2 Drain-Gate Voltage (Rg = 20k) Vpcr | 30 =| ~6Vs” 4.23 SOURCE Gate-Source Voltage Vass 5, 6, 7, 8 DRAIN pein cures | “ibe | a Drain Power Dissipation* Single Pulse Avalanche Energy Avalanche Current CIRCUIT CONFIGURATION Channel Temperature om me Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SitBor Thermal Resistance, Channel to Ambient* | Rth (ch-a) 1 2 3 4 Note ; * Repetitive rating ; Pulse Width Limited by Max. Junction Temperature. Vpp = 24V, Teh = 25°C (initial), L = 1.0mH, Rg = 250, IAR=7A * Drive operation ; Mount on glass epoxy board [1inch? X 0.8t] (t = 10s) This transistor is an electrostatic sensitive device. Please handle with caution. 961001644 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property oF other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-02-29 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) Gate Leakage Current Igss Vas = +16V, Vpg = 0V | — | — | +10] ZA | Drain Cut-Off Current | Ipss__|Vps = 30V, Vag = 0V | — | — | 10] pA | Drain-Source Breakdown Ip = 10mA, Vag =0V | 3so| — | — | Vv Voltage Ip=10mA, Vos = 200 | 15 — | — | Gate Threshold Voltage Vps = 10V, Ip =1mA | 13[ — | 25] Vv | - R Drain-Source ON Resistance ‘DS (ON) Vag = 10V, Ip =3.5A L— | 19} 27 | mQ Forward Transfer waeievigeass[w[ tl [| | = | 790] — | Reverse Transfer Cc Vps = 10 V, Veg = OV, F Capacitance mss |f=1MHz P P= [0 vos YT. Tin |-| +[-| ov Vout Turn-On Time RL= 13 Switching fom.on ine | tow | g 4.30 |= | »|-| Time xi Fall ‘Time i p=] [= Vpp 5 15V . VIN : tr, te <5ns Turn-Off Time | toff Duty = 1%, tw =10 ns Total Gate Charge (Gate- Q 16 Source Plus Gate-Drain) i Vpp = 24V, Ves = 10V, c Gate-Souree Charge Ip=7A b= ep] ™ Gate-Drain (“Miller”) Charge | — | 4] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) Continuous Drain Reverse ume |e | I=] | [Pulse Drain Reverse Cument| Ipap [| — | = | =| a] Diode Forward Voltage | Vosr_[Ipr=74,Ves=ov | — J — [127 v_ | MARKING oon * Lot Number TYPE ao Month (Starting from Alphabet A) a Year (Last Number of the Christian Era) 2000-02-29 2/5

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7 ail ; SS : vein yt St {|| f | ae aS | a -— . sr source VOLTAC Z HHH D/ rr; 6 . Rps (ON) eset : , Sareea % ' counce VOLTAGE Vos (V) . se inn GATE- Wl ay By iui Bess Sart : Sd '*°T comrow sound Saitama ag Se : “degece | fee ea : “FH 2 imal - ee < Te= — aa i —aeeeri 58 : i : y = ad ; "FE il ati emai Z Sse) eeeerieeeertl 58 LUT eee a eae nil 3 = Ss = : Zan a maa 3 Ip (A) : “| te : See if é EER HEF EE ‘ts te CURRENT Ip (A) 02-29 3/5 2000-02-

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5000 CAPACITANCE — Vps 25 Vth — Te

sooo tI = “CTT TTT I Jeommon source cc coon oo 3 ep sw SOE) 2 Cees 2. SSS é ft} Tt) PAY 8 sof PSE a 2 oof Goes | a PPPPbereel ee a pop ee i S 100] |_| [PT Cres_| | Fy PE ere ery yy COMMON SOURCE = F—f—FFF rt —F FF] e 0.5) Jae oe gol Te= 250 Eat tH S LLITT TIT tT ttl | On 0.3 0.5 1 35 10 30 50 —80 —40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) DYNAMIC INPUT/ OUTPUT Pp — Ta CHARACTERISTICS 16 .E 7 40) Pulat MEP g ff 5 2 “SATIN TLL s Ve | Y |e 2 pt NIN TT ney), Pt ty é ge | TIN APE I eAAWEIETLL I s ti TE INA | I % 0 ves a 0s N 2 LX? [TTY é a Eeeee eX OUF ARE AMBIENT TEMPERATURE Ta (°C) TOTAL GATE CHARGE Qg (nC) 2000-02-29 4/5

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2 ESHEETS

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04 L LETT TUTTE TTI TCT

PULSE WIDTH tw (s) SAFE OPERATING AREA EAs — Teh 0 = a 100 || ~ 80! e GLASS EPOXY, Nd 8 N N] ges oe NEN QINN EP o Poot Ta=26C NS a P| | INE EE LL 2 3s CUPS TTT 4 20 — 2 os] * Sob enmve ese LUN 2 {tT eAL ET (| Te = 25°C Sei est ot | | | Pei R05] Curves must be derated§— ETH CET HHil 25 cn CT 00.3) jinearly with increase in Tiss Fy oor temperature. [TTI eax: Atl (CHANNEL TEMPERATURE (INITIAL) Teh (°C) DRAIN-SOURCE VOLTAGE Vpg (V) Bypss bv 3+ TAR ov Jl | J \\

4 Vpp /% \\|_ vps

4 \\ TEST CIRCUIT WAVE FORM Peak IAR = 7A, Rg = 250 1 ___Bvpss_ Vp 2tV, Letom | "AS= 2 "-l Gaypss— vpn? <3 00-02-29 5/5

Product Information

TPC8006-H specifications and overview.

Summary

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

Description

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

Source title TPC8006-H Datasheet(PDF) - Toshiba Semiconductor

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