TPC6501_06 TOSHIBA | Alldatasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

  • High DC current gain: h FE = 400 to 1000 (IC = 0.2 A)
  • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
  • High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC I C 2.0 Collector current Pulse I CP 3.5 A Base current IB 200 mA DC 0.8 Collector power dissipation t = 10 s PC (Note 1) 1.6 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Note 2: Using continuously under heavy loads (e.g. t he application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO V CB = 20 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO V EB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.2 A 400 ⎯ 1000 DC current gain hFE (2) VCE = 2 V, IC = 0.6 A 200 ⎯ ⎯ Collector-emitter saturation voltage V CE (sat) I C = 0.6 A, IB = 12 mA ⎯ ⎯ 0.12 V Base-emitter saturation voltage VBE (sat) I C = 0.6 A, IB = 12 mA ⎯ ⎯ 1.10 V Rise time tr ⎯ 60 ⎯ Storage time t stg ⎯ 215 ⎯ Switching time Fall time tf See Figure 1 circuit diagram. VCC ∼ − 6 V, RL = 10 Ω IB1 = −IB2 = 12 mA ⎯ 25 ⎯ ns Figure 1 Switching Time T est Circuit & Timing Chart Circuit Configuration Marking 1 2 3 5 4 IB2 IB1 20 μs Output Input IB2 IB1 RL VCC Duty cycle < 1% Part No. (or abbreviation code) H2A A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code

Base-emitter voltage V BE (V) Collector current I C (A) Base-emitter saturation voltage VBE (sat) (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) VBE (sat) – IC IC – VBE 0.4 0.8 1.2 1.6 2.0 2.4 Common emitter Ta = 25°C Single nonrepetitive l IB = 2 mA 10 20 30 40 10000 0.001 1000 100 0.01 0.1 1 10 Ta = 100°C −55 Common emitter VCE = 2 V Single nonrepetitive pulse 0.001 0.1 0.01 0.001 0.01 0.1 1 10 −55 Ta = 100°C Common emitter IC/IB = 50 Single nonrepetitive pulse 0.001 0.01 0.1 1 10 0.1 Common emitter IC/IB = 50 Single nonrepetitive pulse Ta = 100°C −55 0 0.4 0.8 1.2 1.6 0.4 0.8 1.2 1.6

2.0 Common emitter

VCE = 2 V Single nonrepetitive pulse −55 Ta = 100°C

Collector-emitter voltage V CE (V) Collector current I C (A) Transient Thermal Resistance r th – tw Pulse width t w (s) Transient thermal resistance rth (j-a) (°C/W) Safe Operating Area 0.001 0.01 0.1 1 10 100 1000 100 1000 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) IC max (pulsed) ♦ DC operation (Ta = 25°C) VCEO max 100 μs♦ 1 ms♦ 100 ms♦ 10 ms♦ 10 s♦ IC max (continuous) 0.01 0.1 1 10 100 0.1 ♦: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature.

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.