TPC6501 TOSHIBA | Alldatasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

  • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)
  • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
  • High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 10 V Emitter-base voltage V EBO 7 V DC I C 2.0 Collector current Pulse I CP 3.5 A Base current I B 200 mA DC 0.8 Collector power dissipation t = 10 s PC (Note) 1.6 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 20 V, IE = 0   100 nA Emitter cut-off current I EBO V EB = 7 V, IC = 0   100 nA Collector-emitter breakdown voltage V (BR) CEO I C = 10 mA, IB = 0 10   V hFE (1) VCE = 2 V, IC = 0.2 A 400  1000 DC current gain hFE (2) VCE = 2 V, IC = 0.6 A 200   Collector-emitter saturation voltage V CE (sat) I C = 0.6 A, IB = 12 mA   0.12 V Base-emitter saturation voltage V BE (sat) I C = 0.6 A, IB = 12 mA   1.10 V Rise time t r  60  Storage time t stg  215  Switching time Fall time t f See Figure 1 circuit diagram. VCC ∼ − 6 V, RL = 10 Ω IB1 = −IB2 = 12 mA  25  ns Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.)

Circuit Configuration Marking Figure 1 Switching Time Test Circuit & Timing Chart IB2 IB1 20 µs Output Input IB2 IB1 RL VCC Duty cycle < 1% H 2 A 1 2 3 5 4

Base-emitter voltage V BE (V) Collector current I C (A) Base-emitter saturation voltage VBE (sat) (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) VBE (sat) – IC IC – VBE 0.4 0.8 1.2 1.6 2.0 2.4 Common emitter Ta = 25°C Single nonrepetitive l IB = 2 mA 10 20 30 40 10000 0.001 1000 100 0.01 0.1 1 10 Ta = 100°C −55 Common emitter VCE = 2 V Single nonrepetitive pulse 0.001 0.1 0.01 0.001 0.01 0.1 1 10 −55 Ta = 100°C Common emitter IC/IB = 50 Single nonrepetitive pulse 0.001 0.01 0.1 1 10 0.1 Common emitter IC/IB = 50 Single nonrepetitive pulse Ta = 100°C −55 0 0.4 0.8 1.2 1.6 0.4 0.8 1.2 1.6 2.0 Common emitter VCE = 2 V Single nonrepetitive pulse −55 Ta = 100°C

Collector-emitter voltage V CE (V) Collector current I C (A) Transient Thermal Resistance r th – tw Pulse width t w (s) Transient thermal resistance rth (j-a) (°C/W) Safe Operating Area 0.001 0.01 0.1 1 10 100 1000 100 1000 Curves should be applied in thermal limited area. Single nonrepetitive pulse T a = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) IC max (pulsed) ♦ DC operation (Ta = 25°C) VCEO max 100 µs♦ 1 ms♦ 100 ms♦ 10 ms♦ 10 s♦ IC max (continuous) 0.01 0.1 1 10 100 0.1 ♦: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature.

  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
  • The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE