TPC6108

TPC6108_08 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P-Chann el MOS Type (U-MOSⅣ) TPC6108 Notebook PC Applications Portable Equipment Applications

• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) V DGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D −4.5 Drain current Pulse (Note 1) I DP −18 A Drain power dissipation (t = 5 s) (Note 2a) P D 2.2 Drain power dissipation (t = 5 s) (Note 2b) P D 0.7 W Single-pulse avalanche energy (Note 3) E AS 1.3 mJ Avalanche current IAR −2.25 A Repetitive avalanche energy Single-device value at dual operation (Note 4) EAR 0.22 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: For Notes 1 to 5, see page 3. Caution: This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Drain Drain Gate Source Drain Drain 6 4 1 2 3

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS V DS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V − 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V − 15 ⎯ ⎯ V Gate threshold voltage Vth V DS = −10 V, ID = − 1 mA −0.8 ⎯ −2.0 V RDS (ON) V GS = −4.5 V, ID = −2.2 A ⎯ 75 100 Drain-source ON-resistance RDS (ON) V GS = −10 V, ID = −2.2 A ⎯ 50 60 mΩ Forward transfer admittance |Yfs| V DS = −10 V, ID = −2.2 A 3.7 7.4 ⎯ S Input capacitance Ciss ⎯ 570 ⎯ Reverse transfer capacitance Crss ⎯ 75 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 85 ⎯ pF Rise time tr ⎯ 3.5 ⎯ Turn-on time ton ⎯ 12 ⎯ Fall time tf ⎯ 21 ⎯ Switching time Turn-off time t off Duty ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 13 ⎯ Gate-source charge1 Qgs1 ⎯ 1.8 ⎯ Gate-drain (“Miller”) charge Qgd VDD ≈ −24 V, VGS ≈ −10 V, ID = −4.5 A ⎯ 2.5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ −18 A Forward voltage (diode) VDSF IDR = −4.5 A, VGS = 0 V ⎯ ⎯ 1.2 V RL = 6.8 Ω VDD ≈ −15 V −10 V VGS 0 V 4.7 Ω ID = −2.2 A VOUT

Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) Note 3: V DD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -2.25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● to the lower left of the Part No. marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Part No. (or abbreviation code) S3H A line indicates Lead (Pb)-Free package Lot code (month) Lot No. (weekly code) Pin #1 Lot code (year) Product-specific code

ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID −2 −3 −4 −5 −10 0 −1 −4 −6 −8 −10 −0.4 −0.6 −0.8 −1.0 −0.2 0 −2 −100 0.1 −0.1 −1 −10 −100 −2 −4 −10 −15 0 −1 1000 100 −10 −1 −0. 1 Common source Ta = 25°C Pulse Test VGS = −2.2V −2.6 −2.4 −2.8 −10 −3.5 −4.5 Common source Ta = 25°C Pulse Test VGS = −2.2V −2.6 −2.4 −2.8 −10 −3.5 −4.5 Ta = −55°C 100 Common source VDS = −10 V Pulse Test Common source Ta = 25°C Pulse Test ID = −4.5 A −1.1 −2.2 100 Common source VDS = −10 V Pulse Test Ta = −55°C 100 Common source Ta = 25°C Pulse Test VGS = −4.5 V −10 Forward transfer admittance ⎪Yfs⎪ (S) Drain-source voltage V DS ( V ) Drain current I D ( A ) Drain-source voltage V DS ( V ) Drain current I D ( A ) Gate-source voltage V GS ( V ) Drain current ID (A) Gate-source voltage V GS ( V ) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) ( m Ω) Drain-source voltage V DS (V)

Vth − Ta −80 0 40 80 120 160−40 −2.0 −0.4 −1.2 −0.8 −1.6 RDS (ON) − Ta 100 −40 −80 160 0 40 120 80 IDR − VDS PD − Ta 2.0 0.5 1.0 1.5 0 8040 160120 −40 −30 −20 −10 0 8 12 4 −16 −12 150 −0.1 −100 100 −1 −10 10000 0.20 0.6 1.0 1.2 −0.1 −100 −10 1000 Common source Pulse Test VGS = −10 V VGS = −4.5 V Common source Ta = 25°C Pulse Test −10 −5 −1 VGS = 0 V Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss Common source VGS = −10 V ID = −1 mA Pulse Test (2) DC (1) t = 5s (2) t = 5s (1) DC (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 2.5 16 20 Common source ID = −4.5 A Ta = 25°C Pulse Test VDS −6 V −12 V VDD = −24 V VGS Ambient temperature Ta (°C) Gate threshold voltage Vth ( V ) Ambient temperature Ta (°C) Total gate charge Q g (nC) Capacitance C (pF) Capacitance – VDS Drain-source voltage V DS (V) Drain-source ON-resistance RDS (ON) ( μΩ) Ambient temperature Ta (°C) Drain reverse current I DR (A) Drain-source voltage V DS (V) Drain power dissipation PD ( W ) Drain-source voltage V DS (V) Gate-source voltage V GS (V) Dynamic input / output characteristics 0.4 0.8

rth − tw −0.1 −1 −10 0.1 1m 10m 100m 1 10 100 1000 100 −100 −0.1 −100 −10 1000 SINGLE PULSE Device mounted on a glass-epoxy board (b) (Note 2b) Device mounted on a glass-epoxy board (a) (Note 2a) ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. ID max (pulse) * 10 ms * 1 ms * VDSS max Transient thermal impedance r th (°C/W) Safe Operating Area Drain-source voltage V DS (V) Pulse width t w ( S ) Drain current I D (A)

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
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