TPC6101

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Portable Equipment Applications /Gb7/G20Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) /Gb7/G20High forward transfer admittance: |Yfs| = 8.2 S (typ.) /Gb7/G20Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) /Gb7/G20Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V , I D = −200 µA) Maximum Ratings (Ta /G3d/G3d /G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS /G2d20 V Drain-gate voltage (RGS /G3d 20 k/G57) V DGR /G2d20 V Gate-source voltage VGSS /Gb112 V DC (Note 1) ID /G2d4.5 Drain current Pulse (Note 1) IDP /G2d18 A Drain power dissipation (t /G3d 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t /G3d 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) E AS 3.3 mJ Avalanche current IAR /G2d2.25 A Repetitive avalanche energy (Note 4) E AR 0.22 mJ Channel temperature Tch 150 °C Storage temperature range Tstg /G2d55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t /G3d 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t /G3d 5 s) (Note 2b) R th (ch-a) 178.5 °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration 6 4 1 2 3 Marking (Note 5) S 3 A

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS /G3d /Gb110 V, VDS /G3d 0 V /Gbe /Gbe /Gb110 /G6dA Drain cut-OFF current I DSS V DS /G3d /G2d20 V, VGS /G3d 0 V/G20/Gbe /Gbe /G2d10 /G6dA V (BR) DSS ID /G3d /G2d10 mA, VGS /G3d 0 V/G20/G2d 20 /Gbe /Gbe Drain-source breakdown voltage V (BR) DSX ID /G3d /G2d10 mA, VGS /G3d 12 V/G20/G2d 8 /Gbe /Gbe V Gate threshold voltage V th V DS /G3d /G2d10 V, ID /G3d /G2d200 /G6dA /G2d0.5 /Gbe /G2d1.2 V RDS (ON) V GS /G3d /G2d2 V, ID /G3d /G2d2.2 A /Gbe 110 180 RDS (ON) V GS /G3d /G2d2.5 V, ID /G3d /G2d2.2 A /Gbe 75 100Drain-source ON resistance RDS (ON) V GS /G3d /G2d4.5 V, ID /G3d /G2d2.2 A /Gbe 48 60 m/G57 Forward transfer admittance |Y fs| V DS /G3d /G2d10 V, ID /G3d /G2d2.2 A/G20 4.1 8.2 /Gbe S Input capacitance C iss /Gbe 830 /Gbe Reverse transfer capacitance C rss /Gbe 300 /Gbe Output capacitance C oss VDS /G3d /G2d10 V, VGS /G3d 0 V, f /G3d 1 MHz /Gbe 370 /Gbe pF Rise time t r /Gbe 6 /Gbe Turn-ON time t on /Gbe 11 /Gbe Fall time t f /Gbe 57 /Gbe Switching time Turn-OFF time t off Duty /G3c/G3d1%, tw /G3d 10 /G6ds/G20 /Gbe 112 /Gbe ns Total gate charge (gate-source plus gate-drain) Qg /Gbe 12 /Gbe Gate-source charge Q gs /Gbe 6 /Gbe Gate-drain (“miller”) charge Q gd VDD /G7e/G2d/G2d16 V, VGS /G3d /G2d5 V, ID /G3d /G2d4.5 A /Gbe 6 /Gbe nC Source-Drain Ratings and Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Pulse drain reverse current (Note 1) I DRP /Gbe/G20 /Gbe /Gbe /G2d18 A Forward voltage (diode) V DSF I DR /G3d /G2d4.5 A, VGS /G3d 0 V/G20/Gbe /Gbe 1.2 V Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t /G3d 5 s) (b) Device mounted on a glass-epoxy board (b) (t /G3d 5 s) Note 3: V DD /G3d 16 V, Tch /G3d 25°C (initial), L /G3d 0.5 mH, RG /G3d 25 /G57, IAR /G3d /G2d2.25 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: Black round marking “/Gb7” locates on the left lower side of parts number marking “S3A” indicates terminal No.1. (a) FR-4 25.4 /Gb4 25.4 /Gb4 0.8 Unit: (mm) (b) FR-4 25.4 /Gb4 25.4 /Gb4 0.8 Unit: (mm) RL /G3d 4.5 /G57 VDD /G7e/G2d/G2d10 V /G2d5 V VGS 0 V 4.7 /G57 ID /G3d /G2d2.2 A VOUT

Forward transfer admittance |Y fs| (S) Drain-source voltage V DS (V) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Gate-source voltage V GS (V) VDS – VGS Drain current I D (A) |Yfs| – ID Drain current I D (A) Drain-source on resistance RDS (ON) (m/G57) RDS (ON) – ID /G2d1 /G2d2 /G2d3 /G2d4 /G2d5 /G2d0.4 /G2d0.8 /G2d1.2 /G2d2.0 Common source Ta /G3d 25°C Pulse test VGS /G3d /G2d1.4 V /G2d1.6 V /G2d1.7 V /G2d1 8 V /G2d2.0 V/G2d4 V /G2d5 V /G2d3 V /G2d2.5 V /G2d1 6 /G2d1.9 V /G2d5 V 0 /G2d1 /G2d2 /G2d3 /G2d4 /G2d5 /G2d2.0 V /G2d1.8 V /G2d2.5 V /G2d1.6 V VGS /G3d /G2d1.4 V /G2d2.2 V /G2d2.4 V /G2d3 V /G2d2 /G2d4 /G2d6 /G2d8 /G2d10 Common source Ta /G3d 25°C Pulse test /G2d4 V 1000 /G2d0.1 /G2d1 /G2d10 /G2d100 100 /G2d2.5 V VGS /G3d /G2d4.5 V /G2d2 0 V Common source Ta /G3d 25°C Pulse test 300 /G2d0.3 /G2d3 /G2d30 /G2d0 2 /G2d0.4 /G2d0 6 /G2d0 8 /G2d1 0 /G2d2 /G2d4 /G2d6 /G2d8 /G2d10 /G2d1.1 A /G2d2 2 A Common source Ta /G3d 25°C Pulse test /G20ID /G3d /G2d4 5 A 0.1 100 /G2d0.1 /G2d1 /G2d10 /G2d100 100°C 25°C Ta /G3d /G2d55°C Common source VDS /G3d /G2d10 V Pulse test 0 3 /G2d0.3 /G2d3 /G2d30 Ta /G3d /G2d55°C /G2d2 /G2d4 /G2d6 /G2d8 /G2d10 0 /G2d0 5 /G2d1 /G2d1.5 /G2d2 /G2d2.5 100°C 25°C Common source VDS /G3d /G2d10 V Pulse test

Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source on resistance RDS (ON) (m/G57) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR (A) Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Ambient temperature Ta ( °C) Vth – Ta Gate threshold voltage V th (V) Ambient temperature Ta ( °C) PD – Ta Drain power dissipation P D (W) Gate-source voltage V GS (V) Total gate charge Q g ( n C ) Dynamic input/output characteristics Drain-source voltage V DS (V) /G2d80 /G2d40 0 40 80 160 120 /G2d0 8 /G2d1 2 /G2d2 0 Common source VDS /G3d /G2d10 V ID /G3d /G2d200 /G6dA Pulse test /G2d1 6 /G2d0.4 /G2d1 /G2d10 0 0.4 0 6 0.8 1 1 20.2 /G2d100 Common source Ta /G3d 25°C Pulse test /G2d2 V /G2d1 V VGS /G3d /G2d0 V /G2d4 V /G2d3 /G2d30 100 1000 10000 /G2d0.1 /G2d1 /G2d10 /G2d100 Crss Coss Ciss Ta /G3d 25°C f /G3d 1 MHz VGS /G3d 0 V /G2d0.3 /G2d3 /G2d30 300 3000 /G2d4 /G2d8 /G2d10 /G2d6 /G2d2 /G2d4 4 6 8 10 /G2d8 /G2d12 /G2d20Common source ID /G3d /G2d6 A Ta /G3d 25°C Pulse test VGS VDD /G3d /G2d16 V 12 16 18 /G2d16 VDS /G2d8 V 14 2 100 140 180 /G2d80 /G2d40 0 40 80 160 Common source Pulse test 120 VGS /G3d /G2d2.0 V ID /G3d /G2d2.2 A 160 120 /G2d1.1 A /G2d4 5 A /G2d1.1 A /G2d1.1 A /G2d2 2 A /G2d4 5 V /G2d2 5 V /G2d4 5 A /G2d2 2 A 0 5 1 5 2 5 40 80 120 160 (1) t /G3d 5 s (2) t /G3d 5 s (1) DC (2) DC (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)

Drain-source voltage V DS (V) Drain current I D (A) rth /G2d tw Pulse t w (s) Transient thermal impedance r th (°C/W) 0.1 0.001 0.01 0.1 10 100 1000 0 3 100 300 1000 Single pulse Device mounted on a glass- epoxy board (b) (Note 2b) Device mounted on a glass- epoxy board (a) (Note 2a) /G2d0 001 /G2d0 01 /G2d0.03 /G2d0.1 /G2d0.3 /G2d1 /G2d3 /G2d10 /G2d100/G2d30 /G2d0.003 /G2d0.01 /G2d0.03 /G2d0.1 /G2d0 3 /G2d10 /G2d1 /G2d3 /G2d100 /G2d30 *: Single pulse Ta /G3d 25°C Curves must be derated linearly with increase in temperature ID max (pulse)* 10 ms* 1 ms* VDSS max

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE