TPC6003

TPC6003_07 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC6003 Notebook PC Applications Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 30 V Drain-gate voltage (RGS = 20 kΩ) V DGR 30 V Gate-source voltage V GSS ±20 V DC (Note 1) ID 6 Drain current Pulse (Note 1) IDP 24 A Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) E AS 5.8 mJ Avalanche current I AR 3 A Repetitive avalanche energy (Note 4) E AR 0.22 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) 6 4 1 2 3

Marking (Note 5) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current I DSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 3 A ⎯ 25 32 Drain-source ON resistance R DS (ON) VGS = 10 V, ID = 3 A ⎯ 19 24 mΩ Forward transfer admittance |Y fs| V DS = 10 V, ID = 3 A 3.5 7 ⎯ S Input capacitance C iss ⎯ 1250 ⎯ Reverse transfer capacitance C rss ⎯ 155 ⎯ Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 170 ⎯ pF Rise time t r ⎯ 5 ⎯ Turn-ON time t on ⎯ 11 ⎯ Fall time t f ⎯ 9 ⎯ Switching time Turn-OFF time t off Duty <= 1%, tw = 10 µs ⎯ 63 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 25 ⎯ Gate-source charge Q gs ⎯ 20 ⎯ Gate-drain (“miller”) charge Q gd VDD ∼− 24 V, VGS = 10 V, ID = 6 A ⎯ 5 ⎯ nC RL = 5 Ω VDD ∼− 15 V 0 V VGS 10 V 4.7 Ω ID = 3 A VOUT Part No. (or abbreviation code) S2D A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code

Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 24 A Forward voltage (Diode) V DSF I DR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. (a) FR-4 2510 ms* (b) FR-4 25.4 × 25.4 × 0.8 Unit: (mm)

Forward transfer admittance |Y fs| (S) Drain-source voltage V DS (V) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Gate-source voltage V GS (V) VDS – VGS Dain current I D (A) |Yfs| – ID Drain current I D (A) Drain-source on resistance RDS (ON) (m Ω) RDS (ON) – ID 10 0246 8 0.1 0.2 0.3 0.5 0.6 0.4 Common source Ta = 25°C Pulse test 1.5 A 3 A ID = 6 A 100 0.1 0.3 1 3 30 100 10 Common source Ta = 25°C Pulse test VGS = 10 V 4.5 V 100°C 0 2 3 4 5 Ta = −55°C 25°C Common source VDS = 10 V Pulse test 1 3 5 30 50 100 100 Common source VDS = 10 V Pulse test 100°C 25°C Ta = −55°C 2.5 VGS = 2.3 V 2.6 3.2 10 Common source Ta = 25°C Pulse test 6 2.8 2.7 4 0123 4 5 Common source Ta = 25°C Pulse test VGS = 2.4 V 2.8 6, 8, 10 2.7 2.6 2.5 Drain current

Ambient temperature Ta ( °C) RDS (ON) – Ta Drain-source on resistance RDS (ON) ( m Ω) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR ( A ) Drain-source voltage V DS Capacitance – VDS Capacitance C (pF) Ambient temperature Ta ( °C) Vth – Ta Gate threshold voltage V th (V) Ambient temperature Ta ( °C) PD – Ta Gate-source voltage V GS (V) Total gate charge Q g ( n C ) Dynamic input/output characteristics Drain-source voltage V DS (V) Common source Pulse test −80 −40 0 40 80 160 120 VGS = 4.5 V VGS = 10 V ID = 1.5 A, 3 A ID = 6 A ID = 1.5 A, 3 A, 6 A 100 1000 10000 0.1 1 10 100 3000 300 0.3 3 30 Ciss Crss Coss Common source VGS = 0 V f = 1 MHz Ta = 25°C 0.5 1.5 2.0 2.5 3.5 −80 −40 0 40 80 160 Common source VDS = 10 V ID = 1 mA Pulse test 120 3.0 1.0 08 1 6 24 32 40 6 V 12 V VDD = 24 V VGS VDD = 24 V 12 V 6 V Common source ID = 6 A Ta = 25°C Pulse test 0.5 1.5 2.5 40 80 120 160 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) t = 5 s (2) t = 5 s (1) DC (2) DC 0.1 0.3 100 Common source Ta = 25°C Pulse test Drain power dissipation P D

rth − tw Safe operating area Pulse t w (s) Drain-source voltage V DS (V) Transient Drain current I D (A) 0.1 0.001 0.01 0.1 10 100 1000 0.3 100 300 1000 Single pulse Device mounted on a glass- epoxy board (b) (Note 2b) Device mounted on a glass- epoxy board (a) (Note 2a) 0.01 0.01 0.03 0.1 0.3 1 3 10 100 30 0.03 0.1 0.3 100 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature VDSS max 10 ms* 1 ms* ID max (pulsed)* 0.001 0.003

• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and relia bility of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE