TPA711DR

TPA711_07 TI | Alldatasheet

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700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 /C0068Fully Specified for 3.3-V and 5-V Operation /C0068Wide Power Supply Compatibility 2.5 V – 5.5 V /C0068Output Power – 700 mW at V DD = 5 V, BTL, RL = 8 Ω – 85 mW at VDD = 5 V, SE, RL = 32 Ω – 250 mW at VDD = 3.3 V, BTL, RL = 8 Ω – 37 mW at VDD = 3.3 V, SE, RL = 32 Ω /C0068Shutdown Control – IDD = 7 µA at 3.3 V – IDD = 50 µA at 5 V /C0068BTL to SE Mode Control /C0068Integrated Depop Circuitry /C0068Thermal and Short-Circuit Protection /C0068Surface-Mount Packaging – SOIC – PowerPAD MSOP

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The TPA711 is a bridge-tied load (BTL) or single-ended (SE) audio power amplifier devel- oped especially for low-voltage applications where internal speakers and external earphone operation are required. Operating with a 3.3-V supply, the TPA711 can deliver 250-mW of continuous power into a BTL 8-Ω load at less than 0.6% THD+N throughout voice band frequencies. Although this device is characterized out to 20 kHz, its operation is optimized for narrower band applications such as wireless communications. The BTL configuration eliminates the need for external coupling capacitors on the output in most applications, which is particularly important for small battery-powered equipment. A unique feature of the TPA711 is that it allows the amplifier to switch from BTL to SE on the fly when an earphone drive is required. This eliminates complicated mechanical switching or auxiliary devices just to drive the external load. This device features a shutdown mode for power-sensitive applications with special depop circuitry to eliminate speaker noise when exiting shutdown mode. The TPA711 is available in an 8-pin SOIC and the surface-mount PowerPAD MSOP package, which reduces board space by 50% and height by 40%. Audio Input Bias Control VDD 700 mW VO + VDD BYPASS IN SE/BTL VDD /2 C I R I C S C B R F SHUTDOWN From HP Jack VO –8 GND From System Control Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright  2002, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. SHUTDOWN BYPASS SE/BTL IN VO – GND VDD VO + D OR DGN PACKAGE (TOP VIEW) PowerPAD is a trademark of Texas Instruments.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MSOPTA SMALL OUTLINE † (D) MSOP ‡ (DGN) MSOP SYMBOLIZATION –40°C to 85°C TPA711D TPA711DGN ABB † In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW peaks can be driven, as long as the RMS value is less than 350 mW. ‡ The D and DGN packages are available taped and reeled. To order a taped and reeled part, add the suffix R to the part number (e.g., TPA311DR). Terminal Functions TERMINAL I/O DESCRIPTIONNAME NO. I/O DESCRIPTION BYPASS 2 I BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to a 0.1-µF to 2.2-µF capacitor when used as an audio amplifier. GND 7 GND is the ground connection. IN 4 I IN is the audio input terminal. SE/BTL 3 I When SE/BTL is held low, the TPA711 is in BTL mode. When SE/BTL is held high, the TPA711 is in SE mode. SHUTDOWN 1 I SHUTDOWN places the entire device in shutdown mode when held high (IDD = 7 µA). VDD 6 VDD is the supply voltage terminal. VO + 5 O VO + is the positive output for BTL and SE modes. VO – 8 O VO – is the negative output in BTL mode and a high-impedance output in SE mode. absolute maximum ratings over operating free-air temperature range (unless otherwise noted)§ § Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C D 725 mW 5.8 mW/°C 464 mW 377 mW DGN 2.14 W¶ 17.1 mW/°C 1.37 W 1.11 W ¶ Please see the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report (SLMA002), for more information on the PowerPAD package. The thermal data was measured on a PCB layout based on the information in the section entitled Texas Instruments Recommended Board for PowerPAD on page 33 of that document.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 recommended operating conditions MIN MAX UNIT ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Supply voltage, VDD ÁÁÁÁ ÁÁÁÁ 2.5 ÁÁÁ ÁÁÁ 5.5 ÁÁÁ ÁÁÁ V ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ High level voltage V SHUTDOWN ÁÁÁÁ ÁÁÁÁ 0.9VDD ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ V ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ High-level voltage, VIH SE/BTL ÁÁÁÁ ÁÁÁÁ 0.9VDD ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ V ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Low level voltage V SHUTDOWN ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁ 0.1VDD ÁÁÁ ÁÁÁ V ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Low-level voltage, VIL SE/BTL ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁ 0.1VDD ÁÁÁ ÁÁÁ V ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Operating free-air temperature, TA (see Table 3) ÁÁÁÁ ÁÁÁÁ –40 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ electrical characteristics at specified free-air temperature, VDD = 3.3 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ VOO ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Output offset voltage (measured differentially) ÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁ SHUTDOWN = 0 V, SE/BTL = 0 V, RL = 8 Ω , RF = 10 kΩ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ mV ÁÁÁÁ ÁÁÁÁ PSRR ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Power supply rejection ratio ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ V 32Vt o34V ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ BTL mode ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ dB ÁÁÁÁ ÁÁÁÁ PSRR ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Power supply rejection ratio ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ VDD = 3.2 V to 3.4 V ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ SE mode ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ dB ÁÁÁÁ ÁÁÁÁ I ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Supply current (see Figure 6) ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ BTL mode, SHUTDOWN = 0 V, SE/BTL = 0.33 V, RF = 10 kΩ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ 1.25 ÁÁÁ ÁÁÁ 2.5 ÁÁÁ ÁÁÁ mA ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ IDD ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Supply current (see Figure 6) ÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁ SE mode, SHUTDOWN = 0 V, SE/BTL = 2.97 V, RF = 10 kΩ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ 0.65 ÁÁÁ Á Á Á ÁÁÁ 1.25 ÁÁÁ Á Á Á ÁÁÁ mA ÁÁÁÁ ÁÁÁÁ IDD(SD) ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Supply current, shutdown mode (see Figure 7) ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ SE/BTL = 2.97 V, SHUTDOWN = VDD , RF = 10 kΩ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ µA ÁÁÁÁ ÁÁÁÁ |I | ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ SHUTDOWN, V DD = 3.3 V, VI = VDD ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ A ÁÁÁÁ ÁÁÁÁ |IIH| ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ SE/BTL, VDD = 3.3 V, VI = VDD ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ µA ÁÁÁÁ ÁÁÁÁ |I | ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ SHUTDOWN, V DD = 3.3 V, VI = 0 V ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ A ÁÁÁÁ ÁÁÁÁ |IIL| ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ SE/BTL, VDD = 3.3 V, VI = 0 V ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ µA operating characteristics, VDD = 3.3 V, TA = 25°C, RL = 8 Ω PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ THD = 0.2%, ÁÁÁÁÁÁ ÁÁÁÁÁÁ BTL mode, ÁÁÁÁÁ ÁÁÁÁÁ See Figure 14 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ 250 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁ PO ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Output power, see Note 1 ÁÁÁÁÁ ÁÁÁÁÁ THD = 0.1%, See Figure 22 ÁÁÁÁÁÁ ÁÁÁÁÁÁ SE mode, ÁÁÁÁÁ ÁÁÁÁÁ R L = 32 Ω , ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ mW ÁÁÁÁ ÁÁÁÁ THD + N ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Total harmonic distortion plus noise ÁÁÁÁÁ ÁÁÁÁÁ PO = 250 mW, ÁÁÁÁÁÁ ÁÁÁÁÁÁ f = 200 Hz to 4 kHz, ÁÁÁÁÁ ÁÁÁÁÁ See Figure 12 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ 0.55% ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁ BOM ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Maximum output power bandwidth ÁÁÁÁÁ ÁÁÁÁÁ Gain = 2, ÁÁÁÁÁÁ ÁÁÁÁÁÁ THD = 2%, ÁÁÁÁÁ ÁÁÁÁÁ See Figure 12 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ kHz ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Unity-gain bandwidth ÁÁÁÁÁ ÁÁÁÁÁ Open Loop, ÁÁÁÁÁÁ ÁÁÁÁÁÁ See Figure 36 ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ 1.4 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ MHz ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Supply ripple rejection ratio ÁÁÁÁÁ ÁÁÁÁÁ f = 1 kHz, See Figure 5 ÁÁÁÁÁÁ ÁÁÁÁÁÁ C B = 1 µF, ÁÁÁÁÁ ÁÁÁÁÁ BTL mode, ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ dB ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁ Supply ripple rejection ratio ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ f = 1 kHz, See Figure 3 ÁÁÁÁÁÁ Á ÁÁÁÁ Á ÁÁÁÁÁÁ C B = 1 µF, ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ SE mode, ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ dB ÁÁÁÁ ÁÁÁÁ Vn ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Noise output voltage ÁÁÁÁÁ ÁÁÁÁÁ Gain = 1, ÁÁÁÁÁÁ ÁÁÁÁÁÁ C B = 0.1 µF, ÁÁÁÁÁ ÁÁÁÁÁ See Figure 42 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ µV(rms) NOTE 1: Output power is measured at the output terminals of the device at f = 1 kHz.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics at specified free-air temperature, VDD = 5 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ VOO ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Output offset voltage (measured differentially) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ SHUTDOWN = 0 V, SE/BTL = 0 V, RL = 8 Ω , RF = 10 kΩ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ mV ÁÁÁÁ ÁÁÁÁ PSRR ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Power supply rejection ratio ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ V 49Vt o51V ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ BTL mode ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ dB ÁÁÁÁ PSRR ÁÁÁÁÁÁÁÁÁÁ Power supply rejection ratio ÁÁÁÁÁÁÁÁ VDD = 4.9 V to 5.1 V ÁÁÁÁÁÁÁ SE mode ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ dB ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ I ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Supply current (see Figure 6) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ BTL mode, SHUTDOWN = 0 V, SE/BTL = 0.5 V, RF = 10 kΩ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ 1.25 ÁÁÁ Á Á Á ÁÁÁ 2.5 ÁÁÁ Á Á Á ÁÁÁ mA ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ IDD ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Supply current (see Figure 6) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ SE mode, SHUTDOWN = 0 V, SE/BTL = 4.5 V, RF = 10 kΩ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ 0.65 ÁÁÁ Á Á Á ÁÁÁ 1.25 ÁÁÁ Á Á Á ÁÁÁ mA ÁÁÁÁ ÁÁÁÁ IDD(SD) ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Supply current, shutdown mode (see Figure 7) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ SE/BTL = 0 V, SHUTDOWN = VDD , RF = 10 kΩ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ 100 ÁÁÁ ÁÁÁ µA ÁÁÁÁ ÁÁÁÁ |I | ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ SHUTDOWN, V DD = 5.5 V, VI = VDD ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ A ÁÁÁÁ ÁÁÁÁ |IIH| ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ SE/BTL, VDD = 5.5 V, VI = VDD ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ µA ÁÁÁÁ ÁÁÁÁ |I | ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ SHUTDOWN, V DD = 5.5 V, VI = 0 V ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ A ÁÁÁÁ ÁÁÁÁ |IIL| ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ SE/BTL, VDD = 5.5 V, VI = 0 V ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ 1ÁÁÁ ÁÁÁ µA operating characteristics, VDD = 5 V, TA = 25°C, RL = 8 Ω PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ THD = 0.3%, ÁÁÁÁÁÁ BTL mode, ÁÁÁÁÁ See Figure 18 ÁÁÁ ÁÁÁ 700† ÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁ Á ÁÁÁÁ PO ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Output power, see Note 1 ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ THD = 0.1%, See Figure 26 ÁÁÁÁÁÁ Á ÁÁÁÁ Á ÁÁÁÁÁÁ SE mode, ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ R L = 32 Ω , ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ mW ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ THD + N ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Total harmonic distortion plus noise ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ PO = 700 mW, ÁÁÁÁÁÁ Á ÁÁÁÁ Á ÁÁÁÁÁÁ f = 200 Hz to 4 kHz, ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ See Figure 16 ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ 0.5% ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁÁÁÁÁ BOM ÁÁÁÁÁÁÁÁÁÁ Maximum output power bandwidth ÁÁÁÁÁ Gain = 2, ÁÁÁÁÁÁ THD = 2%, ÁÁÁÁÁ See Figure 16 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ kHz ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Unity-gain bandwidth ÁÁÁÁÁ ÁÁÁÁÁ Open Loop, ÁÁÁÁÁÁ ÁÁÁÁÁÁ See Figure 37 ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ 1.4 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ MHz ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Supply ripple rejection ratio ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ f = 1 kHz, See Figure 5 ÁÁÁÁÁÁ Á ÁÁÁÁ Á ÁÁÁÁÁÁ C B = 1 µF, ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ BTL mode, ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ dB ÁÁÁÁ Á ÁÁ Á ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Supply ripple rejection ratio ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ f = 1 kHz, See Figure 4 ÁÁÁÁÁÁ Á ÁÁÁÁ Á ÁÁÁÁÁÁ C B = 1 µF, ÁÁÁÁÁ Á ÁÁÁ Á ÁÁÁÁÁ SE mode, ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ ÁÁÁ Á Á Á ÁÁÁ dB ÁÁÁÁ Vn ÁÁÁÁÁÁÁÁÁÁ Noise output voltage ÁÁÁÁÁ Gain = 1, ÁÁÁÁÁÁ C B = 0.1 µF, ÁÁÁÁÁ See Figure 43 ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ µV(rms) † The DGN package, properly mounted, can conduct 700 mW RMS power continuously. The D package, can only conduct 350 mW RMS power continuously, with peaks to 700 mW. NOTE 1: Output power is measured at the output terminals of the device at f = 1 kHz.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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Supply ripple rejection ratio vs Frequency 3, 4, 5 IDD Supply current vs Supply voltage 6, 7 P Output power vs Supply voltage 8, 9 PO Output power vs Load resistance 10, 11 THD+N Total harmonic distortion plus noise vs Frequency 12, 13, 16, 17, 20, 21, 24, 25, 28, 29, 32, 33 THD+N Total harmonic distortion plus noise vs Output power 14, 15, 18, 19, 22, 23, 26, 27, 30, 31, 34, 35 Open loop gain and phase vs Frequency 36, 37 Closed loop gain and phase vs Frequency 38, 39, 40, 41 Vn Output noise voltage vs Frequency 42, 43 PD Power dissipation vs Output power 44, 45, 46, 47 Figure 3 –50 –60 –80 –100 20 100 1k –30 –20 f – Frequency – Hz SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY 10k 20k –10 –40 –70 –90 BYPASS = 1/2 VDD C B = 0.1 µF VDD = 3.3 V R L = 8 Ω SE C B = 1 µF Supply Ripple Rejection Ratio – dB Figure 4 –50 –60 –80 –100 20 100 1k –30 –20 f – Frequency – Hz SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY 10k 20k –10 –40 –70 –90 BYPASS = 1/2 VDD C B = 0.1 µF VDD = 5 V R L = 8 Ω SE C B = 1 µF Supply Ripple Rejection Ratio – dB

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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VDD – Supply Voltage – V OUTPUT POWER vs SUPPLY VOLTAGE 600 400 200 2.5 3.5 3 4 5.5 1000 P 4.5 5 O – Output Power – mW 800 THD+N 1% f = 1 kHz BTL R L = 32 Ω R L = 8 Ω Figure 9 VDD – Supply Voltage – V OUTPUT POWER vs SUPPLY VOLTAGE 150 100 34 3.5 4.5 350 P O – Output Power – mW 200 THD+N = 1% f = 1 kHz SE R L = 32 Ω R L = 8 Ω 250 300 5.52.5 Figure 10 R L – Load Resistance – Ω OUTPUT POWER vs LOAD RESISTANCE 300 200 100 16 32 24 40 64 800 P 48 56 O – Output Power – mW 400 THD+N = 1% f = 1 kHz BTL VDD = 5 V 500 600 VDD = 3.3 V 700 Figure 11 R L – Load Resistance – Ω OUTPUT POWER vs LOAD RESISTANCE 14 2620 32 5083 8 4 4 THD+N = 1% f = 1 kHz SE VDD = 5 V VDD = 3.3 V 56 62 150 100 350 PO – Output Power – mW 200 250 300

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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f – Frequency – Hz THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY AV = –2 V/V VDD = 5 V PO = 700 mW R L = 8 Ω BTL 20 1k 10k 0.01 0.1 20k100 AV = –20 V/V AV = –10 V/V Figure 17 f – Frequency – Hz THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY PO = 700 mW VDD = 5 V R L = 8 Ω AV = –2 V/V BTL 20 1k 10k 0.01 0.1 20k100 PO = 50 mW PO = 350 mW Figure 18 PO – Output Power – W THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER R L = 8 Ω VDD = 5 V f = 1 kHz AV = –2 V/V BTL 0.01 0.1 0.3 0.6 0.9 Figure 19 PO – Output Power – W THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER f = 20 Hz VDD = 5 V R L = 8 Ω C B = 1 µF AV = –2 V/V BTL 0.01 0.1 1 0.01 0.1 f = 1 kHz f = 10 kHz f = 20 kHz

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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f – Frequency – Hz THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY AV = –10 V/V VDD = 5 V PO = 60 mW R L = 32 Ω SE 20 1k 10k 0.1 0.001 0.01 20k100 AV = –1 V/V AV = –5 V/V Figure 25 f – Frequency – Hz THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY VDD = 5 V R L = 32 Ω AV = –1 V/V SE 20 1k 10k 0.1 0.001 0.01 20k100 PO = 15 mW PO = 60 mW PO = 30 mW Figure 26 THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER VDD = 5 V f = 1 kHz R L = 32 Ω AV = –1 V/V SE 0.01 0.1 PO – Output Power – W Figure 27 PO – Output Power – W THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER f = 20 Hz VDD = 5 V R L = 32 Ω AV = –1 V/V SE 0.01 0.1 f = 1 kHz f = 10 kHz f = 20 kHz 0.002 0.1 0.2 0.01

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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f – Frequency – Hz THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY VDD = 5 V PO = 0.3 mW R L = 10 kΩ SE 20 1k 10k 0.01 0.001 20k100 AV = –1 V/V AV = –2 V/V AV = –5 V/V 0.1 Figure 33 f – Frequency – Hz THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 20 1k 10k 0.01 0.001 20k100 0.1 VDD = 5 V R L = 10 kΩ AV = –1 V/V SE PO = 0.1 mW PO = 0.3 mW PO = 0.2 mW Figure 34 THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER VDD = 5 V f = 1 kHz R L = 10 kΩ AV = –1 V/V SE 0.1 0.001 0.01 PO – Output Power – µW 50 100 500150 200 250 300 350 400 450 Figure 35 PO – Output Power – µW THD+N –Total Harmonic Distortion + Noise – % TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER f = 20 Hz VDD = 5 V R L = 10 kΩ AV = –1 V/V SE f = 10 kHz 5 100 500 0.1 0.001 0.01 f = 1 kHz f = 20 kHz

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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CLOSED-LOOP GAIN AND PHASE vs FREQUENCY –0.5 –1.5 f – Frequency – Hz –0.25 –0.75 –1.25 –1.75 0.5 Closed-Loop Gain – dB 0.25 0.75 130° 120° 140° Phase 150° 160° VDD = 3.3 V R L = 8 Ω PO = 250 mW BTL 170° 180° Gain Phase 101 102 103 104 105 106 Figure 38 CLOSED-LOOP GAIN AND PHASE vs FREQUENCY –0.5 –1.5 f – Frequency – Hz –0.25 –0.75 –1.25 –1.75 0.5 Closed-Loop Gain – dB 0.25 0.75 130° 120° 140° Phase 150° 160° VDD = 5 V R L = 8 Ω PO = 700 m W BTL 170° 180° Gain Phase 101 102 103 104 105 106 Figure 39

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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– Output Noise Voltage – VµVn f – Frequency – Hz OUTPUT NOISE VOLTAGE vs FREQUENCY 20 1 k 10 k 100 20 k100 VO BTL VDD = 3.3 V BW = 22 Hz to 22 kHz R L = 8 Ω or 32 Ω AV = 1 VO+ (rms) Figure 43 – Output Noise Voltage – VµVn f – Frequency – Hz OUTPUT NOISE VOLTAGE vs FREQUENCY 20 1 k 10 k 100 20 k100 VDD = 5 V BW = 22 Hz to 22 kHz R L = 8 Ω or 32 Ω AV = 1 VO BTL VO+ (rms) Figure 44 PD – Output Power – mW POWER DISSIPATION vs OUTPUT POWER 400 6000 150 100 350 PD – Power Dissipation – mW 200 250 300 200 VDD = 3.3 V BTL R L = 32 Ω R L = 8 Ω Figure 45 PD – Output Power – W POWER DISSIPATION vs OUTPUT POWER 1500 PD – Power Dissipation – mW 100 50 100 VDD = 3.3 V SE R L = 32 Ω R L = 8 Ω

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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APPLICATION INFORMATION

bridged-tied load versus single-ended mode Figure 48 shows a linear audio power amplifier (APA) in a BTL configuration. The TPA711 BTL amplifier consists of two linear amplifiers driving both ends of the load. There are several potential benefits to this differential drive configuration but initially consider power to the load. The differential drive to the speaker means that as one side is slewing up, the other side is slewing down, and vice versa. This, in effect, doubles the voltage swing on the load as compared to a ground referenced load. Plugging 2 × V O(PP) into the power equation, where voltage is squared, yields 4× the output power from the same supply rail and load impedance (see equation 1). Power /C0043 V (rms) R L (1) V (rms)/C0043 V O(PP) 22/C0504 R L 2x VO(PP) VO(PP) –VO(PP) VDD VDD Figure 48. Bridge-Tied Load Configuration

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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BTL amplifier efficiency (continued) Although the voltages and currents for SE and BTL are sinusoidal in the load, currents from the supply are very different between SE and BTL configurations. In an SE application the current waveform is a half-wave rectified shape, whereas in BTL it is a full-wave rectified waveform. This means RMS conversion factors are different. Keep in mind that for most of the waveform, both the push and pull transistors are not on at the same time, which supports the fact that each amplifier in the BTL device only draws current from the supply for half the waveform. The following equations are the basis for calculating amplifier efficiency. IDD rms /C0043 2V P /C0112R L P SUP /C0043V DD IDD rms /C0043 V DD 2V P /C0112R L Efficiency/C0043 P L P SUP Efficiency of a BTL configuration/C0043 /C0112V P 4V DD /C0043 /C0112/C04662P LR L /C0467 1/C03242 4V DD (3) where (4) P L /C0043 V Lrms2 R L /C0043 V p 2R L V Lrms /C0043 V P 2/C0504 Table 1 employs equation 4 to calculate efficiencies for three different output power levels. The efficiency of the amplifier is quite low for lower power levels and rises sharply as power to the load is increased, resulting in a nearly flat internal power dissipation over the normal operating range. The internal dissipation at full output power is less than in the half power range. Calculating the efficiency for a specific system is the key to proper power supply design. Table 1. Efficiency Vs Output Power in 3.3-V 8-Ω BTL Systems † High-peak voltage values cause the THD to increase. that as VDD goes down, efficiency goes up.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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component selection (continued) As an example consider an input resistance of 10 kΩ and a feedback resistor of 50 kΩ . The BTL gain of the amplifier would be –10 V/V and the effective impedance at the inverting terminal would be 8.3 kΩ , which is well within the recommended range. For high performance applications, metal film resistors are recommended because they tend to have lower noise levels than carbon resistors. For values of RF above 50 kΩ , the amplifier tends to become unstable due to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small compensation capacitor of approximately 5 pF should be placed in parallel with RF when RF is greater than 50 kΩ . This, in effect, creates a low pass filter network with the cutoff frequency defined in equation 7. (7) –3 dB fc fc(lowpass)/C00431 2/C0112R F C F For example, if RF is 100 kΩ and CF is 5 pF, then fc is 318 kHz, which is well outside of the audio range. input capacitor, CI In the typical application an input capacitor, CI, is required to allow the amplifier to bias the input signal to the proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency determined in equation 8. (8)fc(highpass)/C00431 2/C0112R IC I –3 dB fc The value of CI is important to consider as it directly affects the bass (low frequency) performance of the circuit. Consider the example where RI is 10 kΩ and the specification calls for a flat bass response down to 40 Hz. Equation 8 is reconfigured as equation 9. (9)C I /C00431 2/C0112R Ifc

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002 25POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 component selection (continued) In this example, CI is 0.40 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and the feedback resistor (RF) to the load. This leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at V DD /2, which is likely higher than the source dc level. It is important to confirm the capacitor polarity in the application. power supply decoupling, CS The TPA711 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 µF placed as close as possible to the device V DD lead, works best. For filtering lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near the audio power amplifier is recommended. midrail bypass capacitor, CB The midrail bypass capacitor, CB, is the most critical capacitor and serves several important functions. During start-up or recovery from shutdown mode, CB determines the rate at which the amplifier starts up. The second function is to reduce noise produced by the power supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit internal to the amplifier, which appears as degraded PSRR THD + N. The capacitor is fed from a 250-kΩ source inside the amplifier. To keep the start-up pop as low as possible, the relationship shown in equation 10 should be maintained. This insures the input capacitor is fully charged before the bypass capacitor is fully charged and the amplifier starts up. (10) /C0466C B /C0032250 kΩ /C0467 /C01181 /C0466R F /C0041R I/C0467C I As an example, consider a circuit where CB is 2.2 µF, CI is 0.47 µF, RF is 50 kΩ , and RI is 10 kΩ . Inserting these values into the equation 10 we get: 18.2/C011835.5 which satisfies the rule. Bypass capacitor, CB, values of 0.1 µF to 2.2 µF ceramic or tantalum low-ESR capacitors are recommended for the best THD and noise performance. single-ended operation In SE mode (see Figure 51), the load is driven from the primary amplifier output (VO +, terminal 5). In SE mode the gain is set by the RF and RI resistors and is shown in equation 11. Since the inverting amplifier is not used to mirror the voltage swing on the load, the factor of 2, from equation 5, is not included. (11)SE Gain /C0043/C0042/C0466 R F R I /C0467

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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component selection (continued) The output coupling capacitor required in single-supply SE mode also places additional constraints on the selection of other components in the amplifier circuit. The rules described earlier still hold with the addition of the following relationship: (12) /C0466C B /C0032250 kΩ /C0467 /C01181 /C0466R F /C0041R I/C0467C I /C04161 R LC C output coupling capacitor, CC In the typical single-supply SE configuration, an output coupling capacitor (CC ) is required to block the dc bias at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling capacitor, the output coupling capacitor and impedance of the load form a high-pass filter governed by equation 13. (13)fc(high)/C00431 2/C0112R LC C –3 dB fc The main disadvantage, from a performance standpoint, is the load impedances are typically small, which drives the low-frequency corner higher, degrading the bass response. Large values of CC are required to pass low frequencies into the load. Consider the example where a CC of 330 µF is chosen and loads vary from 4 Ω , 8 Ω , 32 Ω, and 47 kΩ . Table 2 summarizes the frequency response characteristics of each configuration. Table 2. Common Load Impedances Vs Low Frequency Output Characteristics in SE Mode home stereo for example) is exceptional.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002 27POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 The ability of the TPA711 to easily switch between BTL and SE modes is one of its most important cost-saving features. This feature eliminates the requirement for an additional earphone amplifier in applications where internal speakers are driven in BTL mode but external earphone or speaker must be accommodated. Internal to the TPA711, two separate amplifiers drive V O + and VO –. The SE/BTL input (terminal 3) controls the operation of the follower amplifier that drives VO – (terminal 8). When SE/BTL is held low, the amplifier is on and the TPA711 is in the BTL mode. When SE/BTL is held high, the VO – amplifier is in a high output impedance state, which configures the TPA711 as an SE driver from VO + (terminal 5). IDD is reduced by approximately one-half in SE mode. Control of the SE/BTL input can be from a logic-level TTL source or, more typically, from a resistor divider network as shown in Figure 52. Bias Control VO + BYPASS IN SE/BTL SHUTDOWN VO – 8 GND C C 1 kΩ 100 kΩ VDD 100 kΩ 0.1 µF Figure 52. TPA711 Resistor Divider Network Circuit through the output capacitor (CC ) into the earphone jack. resistance the more the real capacitor behaves like an ideal capacitor.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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5-V versus 3.3-V operation The TPA711 operates over a supply range of 2.5 V to 5.5 V. This data sheet provides full specifications for 5-V and 3.3-V operation, as these are considered to be the two most common standard voltages. There are no special considerations for 3.3-V versus 5-V operation with respect to supply bypassing, gain setting, or stability. The most important consideration is that of output power. Each amplifier in TPA711 can produce a maximum voltage swing of V DD – 1 V. This means, for 3.3-V operation, clipping starts to occur when VO(PP) = 2.3 V as opposed to VO(PP) = 4 V at 5 V. The reduced voltage swing subsequently reduces maximum output power into an 8-Ω load before distortion becomes significant. Operation from 3.3-V supplies, as can be shown from the efficiency formula in equation 4, consumes approximately two-thirds the supply power of operation from 5-V supplies for a given output-power level. headroom and thermal considerations Linear power amplifiers dissipate a significant amount of heat in the package under normal operating conditions. A typical music CD requires 12 dB to 15 dB of dynamic headroom to pass the loudest portions without distortion as compared with the average power output. From the TPA711 data sheet, one can see that when the TPA711 is operating from a 5-V supply into a 8-Ω speaker that 700 mW peaks are available. Converting watts to dB: P dB /C004310Log /C0466 P W P ref /C0467/C004310Log /C0466700 mW 1W /C0467/C0043–1.5 dB Subtracting the headroom restriction to obtain the average listening level without distortion yields: –1.5 dB – 15 dB = –16.5 (15 dB headroom) –1.5 dB – 12 dB = –13.5 (12 dB headroom) –1.5 dB – 9 dB = –10.5 (9 dB headroom) –1.5 dB – 6 dB = –7.5 (6 dB headroom) –1.5 dB – 3 dB = –4.5 (3 dB headroom) Converting dB back into watts: P W /C004310PdB /C032410 /C0032P ref /C004322 mW (15 dB headroom) /C004344 mW (12 dB headroom) /C004388 mW (9 dB headroom) /C0043175 mW (6 dB headroom) /C0043350 mW (3 dB headroom)

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002 29POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 headroom and thermal considerations (continued) This is valuable information to consider when attempting to estimate the heat dissipation requirements for the amplifier system. Comparing the absolute worst case, which is 700 mW of continuous power output with 0 dB of headroom, against 12 dB and 15 dB applications drastically affects maximum ambient temperature ratings for the system. Using the power dissipation curves for a 5-V, 8-Ω system, the internal dissipation in the TPA711 and maximum ambient temperatures is shown in Table 3. Table 3. TPA711 Power Rating, 5-V, 8-Ω , BTL 110°C and 34°C for the DGN package (MSOP) and D package (SOIC) respectively.

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002

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D (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE

14 PINS SHOWN

0.228 (5,80) 0.244 (6,20) 0.069 (1,75) MAX 0.010 (0,25) 0.004 (0,10) 0.014 (0,35) 0.020 (0,51) A 0.157 (4,00) 0.150 (3,81) 0.044 (1,12) 0.016 (0,40) Seating Plane 0.010 (0,25) PINS ** 0.008 (0,20) NOM A MIN A MAX DIM Gage Plane 0.189 (4,80) (5,00) 0.197 (8,55) (8,75) 0.337 0.344 (9,80) 0.394 (10,00) 0.386 0.004 (0,10) M0.010 (0,25) 0.050 (1,27) 0°–/C02578° NOTES: A. All linear dimensions are in inches (millimeters). B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15). D. Falls within JEDEC MS-012

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS230D – NOVEMBER 1998 – REVISED OCTOBER 2002 31POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA DGN (S-PDSO-G8) PowerPAD  PLASTIC SMALL-OUTLINE PACKAGE 0,69 0,41 0,25 Thermal Pad (See Note D) 0,15 NOM Gage Plane 4073271/A 04/98 4,98 0,25 3,05 4,782,95 3,05 2,95 0,38 0,15 0,051,07 MAX Seating Plane 0,10 0,65 M0,25 0°–/C02576° NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. Body dimensions include mold flash or protrusions. D. The package thermal performance may be enhanced by attaching an external heat sink to the thermal pad. This pad is electrically and thermally connected to the backside of the die and possibly selected leads. E. Falls within JEDEC MO-187 PowerPAD is a trademark of Texas Instruments.

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) TPA711D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711DGN ACTIVE MSOP- Power PAD DGN 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711DGNG4 ACTIVE MSOP- Power PAD DGN 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711DGNR ACTIVE MSOP- Power PAD DGN 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711DGNRG4 ACTIVE MSOP- Power PAD DGN 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA711EVM OBSOLETE TBD Call TI Call TI (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 18-Jul-2006 Addendum-Page 1

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