TPA4411M

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www.ti.com 80-mW DIRECTPATH STEREO HEADPHONE DRIVER Space Saving Packages 20-Pin, mm mm Thin QFN TPA4411 Thermally Optimized PowerPAD Package TPA4411M Thermally Enhanced PowerPAD Package 16-Ball, 2.18 mm 2.18 mm WCSP Ground-Referenced Outputs Eliminate DC-Bias Voltages on Headphone Ground Pin No Output DC-Blocking Capacitors Reduced Board Area Reduced Component Cost Improved THD+N Performance No Degradation of Low-Frequency Response Due to Output Capacitors Wide Power Supply Range: 1.8 V to 4.5 V 80-mW/Ch Output Power into 16- Ω at 4.5 V Independent Right and Left Channel Shutdown Control Short-Circuit and Thermal Protection The TPA4411 and TPA4411M are stereo headphone Pop Reduction Circuitry drivers designed to allow the removal of the output DC-blocking capacitors for reduced component count and cost. The TPA4411 and TPA4411M are ideal for small portable electronics where size and cost are Notebook Computers critical design parameters. CD MP3 Players The TPA4411 and TPA4411M are capable of driving Smart Phones mW into a 16- Ω load at 4.5 Both TPA4411 and Cellular Phones TPA4411M have a fixed gain of 1.5 V/V and PDAs headphone outputs that have 8-kV IEC ESD protection. The TPA4411 and TPA4411M have independent shutdown control for the right and left audio channels. The TPA4411 is available in a 2.18 mm 2.18 mm WCSP and mm mm Thin QFN packages. The TPA4411M is available in a mm mm Thin QFN package. The TPA4411RTJ package is a thermally optimized PowerPAD package allowing the maximum amount of thermal dissipation and the TPA4411MRTJ is a thermally enhanced PowerPAD package designed to match competitive package footprints. Please be aware that an important notice concerning availability, standard warranty, and use in critical sheet. PowerPAD, DirectPath are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright 2004 2008, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

www.ti.com NC PVDD SDL SGND NC C1P PGND C1N NC PVSS INR SDR INL NC OUTR NC SVSS NC OUTL SVDD NC − No internal connection NC PVDD SDL SGND NC C1P PGND C1N NC PVSS INR SDR INL NC OUTR NC SVSS NC OUTL SVDD NC − No internal connection TPA4411MRTJTPA4411RTJ INR INL PGND OUTL PVSSSVSS C1N PVDDSGNDA1 A2 A3 A4 SDL SVDD C1P SDR NC□-□No□internal□connection NC NC OUTR TPA4411YZH TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. RTJ (QFN) PACKAGE (TOP VIEW) YZH (WCSP) PACKAGE (TOP VIEW) Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com ABSOLUTE MAXIMUM RATINGS (1) TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 TERMINAL FUNCTIONS TERMINAL I/O I Power ground, connect to ground. C1N I/O Charge pump flying capacitor negative terminal NC 12, 16, B3, No connection PVSS O Output from charge pump. SVSS I Amplifier negative supply, connect to PVSS via star connection. OUTL O Left audio channel output signal SVDD I Amplifier positive supply, connect to PVDD via star connection. OUTR O Right audio channel output signal INL I Left audio channel input signal SDR I Right channel shutdown, active low logic. INR I Right audio channel input signal SGND I Signal ground, connect to ground. SDL I Left channel shutdown, active low logic. PVDD I Supply voltage, connect to positive supply. Exposed Pad Exposed pad must be soldered to a floating plane. Do NOT connect to power or ground. over operating free-air temperature range, T A C (unless otherwise noted) VALUE UNIT Supply voltage, AVDD, PVDD 0.3 V to 5.5 V V I Input voltage 0.3 V to V DD 0.3 V Output Continuous total power dissipation See Dissipation Rating Table T A Operating free-air temperature range C to C T J Operating junction temperature range C to 150 C T stg Storage temperature range C to 150 C Lead temperature 1,6 mm (1/16 inch) from case for seconds 260 C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com DISSIPATION RATINGS TABLE RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 T A C T A C T A C PACKAGE DERATING FACTOR (1) POWER RATING POWER RATING POWER RATING RTJ 5200 mW 41.6 mW/ C 3120 mW 2700 mW (TPA4411) RTJ 3450 mW 34.5 mW/ C 1898 mW 1380 mW (TPA4411M) YZH 1200 mW 9.21 mW/ C 690 mW 600 mW (1) Derating factor measured with High K board. AVAILABLE OPTIONS T A PACKAGED DEVICES (1) PART NUMBER SYMBOL 20-pin, mm mm QFN TPA4411RTJ (2) AKQ C to C 20-pin, mm mm QFN TPA4411MRTJ (2) BPB 16-ball, 2.18 mm 2.18 mm WSCP TPA4411YZH AKT (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com (2) The RTJ package is only available taped and reeled. To order, add the suffix R to the end of the part number for a reel of 3000, or add the suffix T to the end of the part number for a reel of 250 (e.g., TPA4411RTJR). MIN MAX UNIT Supply voltage, AVDD, PVDD 1.8 4.5 (1) V V IH High-level input voltage SDL SDR 1.5 V V IL Low-level input voltage SDL SDR 0.5 V T A Operating free-air temperature C (1) Device can shut down for VDD 4.5 V to prevent damage to the device. T A C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT |VOS| Output offset voltage V DD 1.8 V to 4.5 Inputs grounded mV PSRR Power Supply Rejection Ratio V DD 1.8 V to 4.5 V dB V OH High-level output voltage V DD R L Ω 2.2 V V OL Low-level output voltage V DD R L Ω 1.1 V IH High-level input current SDL SDR V DD 4.5 V I V DD µ A IL Low-level input current SDL SDR V DD 4.5 V I V µ A V DD 1.8 No load, SDL SDR V DD 5.3 6.5 V DD No load, SDL SDR V DD 6.5 8.0 mA I DD Supply Current V DD 4.5 No load, SDL SDR V DD 8.0 10.0 Shutdown mode, V DD 1.8 V to 4.5 V µ A Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com OPERATING CHARACTERISTICS TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 V DD V T A R L Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT THD 1%, V DD f kHz THD 1%, V DD 4.5 f kHz 100 P O Output power (Outputs In Phase) mW THD 1%, V DD f kHz, R L Ω P O mW, f kHz 0.054% THD+N Total harmonic distortion plus noise P O mW, f kHz 0.010% Crosstallk P O mW, f kHz dB 200-mV pp ripple, f 217 Hz 82.5 k SVR Supply ripple rejection ratio 200-mV pp ripple, f kHz 70.4 dB 200-mV pp ripple, f kHz 45.1 A v Closed-loop voltage gain 1.45 1.5 1.55 V/V Δ A v Gain matching Slew rate 2.2 µ s Maximum capacitive load 400 pF V n Noise output voltage µ V RMS Electrostatic discharge, IEC OUTR, OUTL kV f osc Charge pump switching frequency 280 320 420 kHz Start-up time from shutdown 450 µ s Input impedance k Ω SNR Signal-to-noise ratio P o mW (THD+N 0.1%) dB Threshold 150 170 C Thermal shutdown Hysteresis C Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com SVDD SVSS SVDD SVSS Charge PumpBias Circuitry TPA4411 SGND Av = −1.5 V/V Audio Out − R Audio Out − L C1P C1N PVSS Audio In − R Audio In − L SDx Short Circuit Protection APPLICATION CIRCUIT Shutdown Control SV DD PV DD C1P C1N SV SS PV SS OUTR OUTL SDR INL INR SDL 1.8 − 4.5 V TPA4411 TPA2012D2TLV320AIC26 or TLV320AIC28 HPL or SPK1 HPR or SPK2 PGND SGND TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 Functional Block Diagram Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com TYPICAL CHARACTERISTICS Table of Graphs 0.001 0.01 0.1 100 1 10 PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % In Phase 180° Out of Phase VDD = 1.8 V, R L = 16 W, fIN = 20 Hz Single Channel 0.01 0.1 100 1 10 30 In Phase Single Channel 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 1.8 V, R L = 16 W , fIN = 10 kHz 0.01 0.1 100 1 10 30 In Phase Single Channel 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 1.8 V, R L = 16 W , fIN = 1 kHz 0.01 0.1 100 1 10 30 In Phase Single Channel 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 1.8 V, R L = 32 W , fIN = 1 kHz 0.01 0.1 100 1 10 30 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 1.8 V, R L = 32 W , fIN = 10 kHz 0.001 0.01 0.1 100 1 10 30 In Phase Single Channel 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 1.8 V, R L = 32 W , fIN = 20 Hz TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 C (PUMP) C (PVSS) 2.2 µ F C IN µ F (unless otherwise noted) FIGURE Total harmonic distortion noise vs Output power Total harmonic distortion noise vs Frequency Supply voltage rejection ratio vs Frequency 33, Power dissipation vs Output power Crosstalk vs Frequency Output power vs Supply voltage Quiescent supply current vs Supply voltage Output power vs Load resistance Output spectrum Gain and phase vs Frequency 62, TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure Figure Figure TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure Figure Figure Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com 0.01 0.1 100 1 10 100 300 In Phase Single Channel 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3 V, R L = 16 W , fIN = 10 kHz 0.001 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3 V, R L = 16 W , fIN = 20 Hz 0.01 0.1 100 1 10 100 300 In Phase Single Channel 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3 V, R L = 16 W , fIN = 1 kHz 0.001 0.01 0.1 100 1 10 100 300 PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % In Phase Single Channel 180° Out of Phase VDD = 3 V, R L = 32 W , fIN = 20 Hz 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3 V, R L = 32 W , fIN = 1 kHz 0.001 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3 V, R L = 32 W , fIN = 10 kHz 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W , fIN = 1 kHz 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W , fIN = 10 kHz 0.001 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W , fIN = 20 Hz TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure Figure Figure TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure 10. Figure 11. Figure 12. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure 13. Figure 14. Figure 15. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com 0.001 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 32 W , fIN = 20 Hz 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 32 W , fIN = 1 kHz 0.001 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % Single Channel VDD = 3.6 V, R L = 32 W , fIN = 10 kHz 0.001 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % Single Channel VDD = 4.5 V, R L = 16 W , fIN = 20 Hz 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % Single Channel VDD = 4.5 V, R L = 16 W , fIN = 1 k Hz 0.01 0.1 100 1 100 300 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 4.5 V, R L = 16 W , fIN = 10 k Hz 0.001 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % Single Channel VDD = 4.5 V, R L = 32 W , fIN = 20 Hz 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % Single Channel VDD = 4.5 V, R L = 32 W , fIN = 1 kHz 0.01 0.1 100 1 10 100 300 In Phase 180° Out of Phase PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % Single Channel VDD = 4.5 V, R L = 32 W , fIN = 10 kHz TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure 16. Figure 17. Figure 18. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure 19. Figure 20. Figure 21. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure 22. Figure 23. Figure 24. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 2 mW PO = 5 mW PO = 6 mW VDD = 1.8 V R L = 32 Ω f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 5 mW PO = 25 mW VDD = 3 V R L = 16 Ω PO = 40 mW f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 1 mW PO = 2 mW PO = 3 mW VDD = 1.8 V R L = 16 Ω f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 5 mW VDD = 3 V R L = 32 Ω PO = 25 mW PO = 45 mW f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 5 mW PO = 20 mW VDD = 3.6 V R L = 16 Ω PO = 40 mW f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 5 mW VDD = 3.6 V R L = 32 Ω PO = 70 mW PO = 35 mW −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 10 100 1 k 10 k 100 k kSVR − Supply Voltage Rejection Ratio − V1.8 V 3 V 3.6 V 4.5 V R L = 16 Ω f − Frequency − Hz f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 5 mW PO = 50 mW PO = 35 mW PO = 25 mW VDD = 4.5 V R L = 16 Ω f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 0.001 0.01 0.1 10 100 1 k 10 k 100 k PO = 5 mW PO = 80 mW PO = 25 mW PO = 50 mW VDD = 4.5 V R L = 32 Ω TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs FREQUENCY FREQUENCY FREQUENCY Figure 25. Figure 26. Figure 27. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE NOISE vs vs vs FREQUENCY FREQUENCY FREQUENCY Figure 28. Figure 29. Figure 30. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION SUPPLY VOLTAGE NOISE NOISE REJECTION RATIO vs vs vs FREQUENCY FREQUENCY FREQUENCY Figure 31. Figure 32. Figure 33. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com 0 5 10 15 20 25 30 35 40 PO − Output Power − mW − Power Dissipation − mWP D In Phase 180° Out of Phase VDD = 1.8 V, R L = 32 W −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 10 100 1 k 10 k 100 k kSVR − Supply Voltage Rejection Ratio − V 1.8 V 3 V 4.5 V R L = 32 Ω f − Frequency − Hz 3.6 V 0 5 10 15 20 25 30 PO − Output Power − mW − Power Dissipation − mWP D In Phase 180° Out of Phase VDD = 1.8 V, R L = 16 W 100 150 200 250 300 0 50 100 150 200 PO − Output Power − mW − Power Dissipation − mWP D In Phase 180° Out of Phase VDD = 3 V, R L = 16 W PO − Output Power − mW − Power Dissipation − mWP D 100 150 200 250 300 350 400 0 50 100 150 200 250 300 In Phase 180° Out of Phase VDD = 3.6 V, R L = 16 W 100 120 140 160 0 50 100 150 200 PO − Output Power − mW − Power Dissipation − mWP D In Phase VDD = 3 V, R L = 32 W 180° Out of Phase PO − Output Power − mW − Power Dissipation − mWP D 100 150 200 250 300 350 0 50 100 150 200 250 300 In Phase 180° Out of Phase VDD = 4.5 V, R L = 32 W 100 150 200 250 0 50 100 150 200 250 300 350 PO − Output Power − mW − Power Dissipation − mWPD In Phase 180° Out of Phase VDD = 3.6 V, R L = 32 W 100 200 300 400 500 600 0 50 100 150 200 250 PO − Output Power − mW − Power Dissipation − mWPD In Phase 180° Out of Phase VDD = 4.5 V, R L = 16 W TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 SUPPLY VOLTAGE REJECTION RATIO POWER DISSIPATION POWER DISSIPATION vs vs vs FREQUENCY OUTPUT POWER OUTPUT POWER Figure 34. Figure 35. Figure 36. POWER DISSIPATION POWER DISSIPATION POWER DISSIPATION vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure 37. Figure 38. Figure 39. POWER DISSIPATION POWER DISSIPATION POWER DISSIPATION vs vs vs OUTPUT POWER OUTPUT POWER OUTPUT POWER Figure 40. Figure 41. Figure 42. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com −120 −100 −80 −60 −40 −20 10 100 1 k 10 k 100 k Left to Right Right to Left f − Frequency − Hz Crosstalk − dB VDD = 3 V, PO = 20 mW R L = 16 Ω −120 −100 −80 −60 −40 −20 10 100 1 k 10 k 100 k Left to Right Right to Left f − Frequency − Hz Crosstalk − dB VDD = 3.6 V, PO = 1.6 mW R L = 16 Ω −120 −100 −80 −60 −40 −20 10 100 1 k 10 k 100 k Left to Right Right to Left VDD = 3 V, PO = 1.6 mW R L = 16 Ω f − Frequency − Hz Crosstalk − dB −120 −100 −80 −60 −40 −20 10 100 1 k 10 k 100 k Left to Right Right to Left f − Frequency − Hz Crosstalk − dB VDD = 3.6 V, PO = 20 mW R L = 16 Ω 100 120 180° Out of Phase In Phase PO − Output Power − mW VDD − Supply Voltage − V THD = 1 % R L = 16 W 100 150 200 250 180° Out of Phase In Phase PO − Output Power − mW VDD − Supply Voltage − V THD = 10 % R L = 16 W 100 120 140 160 180° Out of Phase In Phase PO − Output Power − mW VDD − Supply Voltage − V THD = 1 % R L = 32 W 100 150 200 250 180° Out of Phase In Phase PO − Output Power − mW VDD − Supply Voltage − V THD = 10 % R L = 32 W IDD − Quiescent Supply Current − mA VDD − Supply Voltage − V 0 1 1.5 2 2.5 3 3.5 4 4.5 5 TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 CROSSTALK CROSSTALK CROSSTALK vs vs vs FREQUENCY FREQUENCY FREQUENCY Figure 43. Figure 44. Figure 45. CROSSTALK OUTPUT POWER OUTPUT POWER vs vs vs FREQUENCY SUPPLY VOLTAGE SUPPLY VOLTAGE Figure 46. Figure 47. Figure 48. OUTPUT POWER OUTPUT POWER QUIESCENT SUPPLY CURRENT vs vs vs SUPPLY VOLTAGE SUPPLY VOLTAGE SUPPLY VOLTAGE Figure 49. Figure 50. Figure 51. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com 100 110 120 0 10 20 30 40 50 2.2 µF1 µF 0.68 µF 0.47 µF PO − Output Power − mW R L − Load Resistance − Ω In Phase, V DD = 3 V, THD = 1%, Vary C (PUMP) 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 1.8 V, THD = 10%, f IN = 1 kHz, PO = POUTL + POUTR 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 1.8 V, THD = 1%, f IN = 1 kHz, PO = POUTL + POUTR 100 120 140 160 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 3 V, THD = 1%, f IN = 1 kHz, PO = POUTL + POUTR 100 150 200 250 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 3 V, THD = 10%, f IN = 1 kHz, PO = POUTL + POUTR 100 150 200 250 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 3.6 V, THD = 1%, f IN = 1 kHz, PO = POUTL + POUTR 100 150 200 250 300 350 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 3.6 V, THD = 10%, f IN = 1 kHz, PO = POUTL + POUTR 100 150 200 250 300 350 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 4.5 V, THD = 10%, f IN = 1 kHz, PO = POUTL + POUTR 100 150 200 250 300 350 400 450 500 10 100 1000 10000 Out of Phase In Phase PO − Output Power − mW R L − Load Resistance − Ω VDD = 4.5 V, THD = 10%, f IN = 1 kHz, PO = POUTL + POUTR TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 OUTPUT POWER OUTPUT POWER OUTPUT POWER vs vs vs LOAD RESISTANCE LOAD RESISTANCE LOAD RESISTANCE Figure 52. Figure 53. Figure 54. OUTPUT POWER OUTPUT POWER OUTPUT POWER vs vs vs LOAD RESISTANCE LOAD RESISTANCE LOAD RESISTANCE Figure 55. Figure 56. Figure 57. OUTPUT POWER OUTPUT POWER OUTPUT POWER vs vs vs LOAD RESISTANCE LOAD RESISTANCE LOAD RESISTANCE Figure 58. Figure 59. Figure 60. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com -40 -20 100 0.5 1.5 2.5 3.5 Gain − dB 10 100 1□k 10□k 100□k 1□G f − Frequency − Hz Phase − Degrees VCC =□3.6□V, RL =□16 Ω Phase Gain -40 -20 100 Phase − Degrees f − Frequency − Hz 10 100 1□k 10□k 100□k 1□G VCC =□3□V, RL =□16 Ω Phase Gain Gain − dB 0.5 1.5 2.5 3.5 −160 −140 −120 −100 −80 −60 −40 −20 10 100 1 k 10 k 100 k Output Spectrum − dBv f − Frequency − Hz VO = 1 VRMS VDD = 3 V fIN = 1 kHz R L = 32 Ω TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 GAIN AND PHASE GAIN AND PHASE vs vs OUTPUT SPECTRUM FREQUENCY FREQUENCY Figure 61. Figure 62. Figure 63. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com APPLICATION INFORMATION Headphone Amplifiers f =c

2 R C/c112L O

(1) C =O

2 R f/c112L c

(2) TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 Single-supply headphone amplifiers typically require dc-blocking capacitors. The capacitors are required because most headphone amplifiers have a dc bias on the outputs pin. If the dc bias is not removed, the output signal is severely clipped, and large amounts of dc current rush through the headphones, potentially damaging them. The top drawing in Figure illustrates the conventional headphone amplifier connection to the headphone jack and output signal. DC blocking capacitors are often large in value. The headphone speakers (typical resistive values of Ω or Ω combine with the dc blocking capacitors to form a high-pass filter. Equation shows the relationship between the load impedance L the capacitor O and the cutoff frequency C C O can be determined using Equation where the load impedance and the cutoff frequency are known. If f C is low, the capacitor must then have a large value because the load resistance is small. Large capacitance values require large package sizes. Large package sizes consume PCB area, stand high above the PCB, increase cost of assembly, and can reduce the fidelity of the audio output signal. Two different headphone amplifier capacitors. The Capless amplifier architecture is implemented in the same manner as the conventional amplifier with the exception of the headphone jack shield pin. This amplifier provides a reference voltage, which is connected to the headphone jack shield pin. This is the voltage on which the audio output signals are centered. This voltage reference is half of the amplifier power supply to allow symmetrical swing of the output voltages. Do not connect the shield to any GND reference or large currents will result. The scenario can happen if, for example, an accessory other than a floating GND headphone is plugged into the headphone connector. See the second block diagram and waveform in Figure Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com CO CO VOUT VOUT GND GND VDD VDD V /2DD VBIAS Conventional Capless GND VDD VSS VBIAS DirectPath TM Input-Blocking Capacitors fcIN /C00431 2/C0112R IN C IN C IN /C00431 2/C0112fcIN R IN or (3) TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 Figure 64. Amplifier a single supply but makes use of an internal charge pump to provide a negative voltage rail. Combining the user provided positive rail and the negative rail generated by the IC, the device operates in what is effectively a split supply mode. The output voltages are now centered at zero volts with the capability to swing to the positive rail or negative rail. The DirectPath amplifier requires no output dc blocking capacitors, and does not place any voltage on the sleeve. The bottom block diagram and waveform of Figure illustrate the ground-referenced headphone architecture. This is the architecture of the TPA4411. DC input-blocking capacitors are required to be added in series with the audio signal into the input pins of the TPA4411 and TPA4411M. These capacitors block the DC portion of the audio source and allow the TPA4411 and TPA4411M inputs to be properly biased to provide maximum performance. These capacitors form a high-pass filter with the input impedance of the TPA4411 and TPA4411M. The cutoff frequency is calculated using Equation For this calculation, the capacitance used is the input-blocking capacitor and the resistance is the input impedance of the TPA4411 or TPA4411M. Because the gains of both the TPA4411 and TPA4411M are fixed, the input impedance remains a constant value. Using the input impedance value from the operating characteristics table, the frequency and/or capacitance can be determined when one of the two values are given. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com Charge Pump Flying Capacitor and PVSS Capacitor 0.001 0.01 0.1 10 100 1 k 10 k 100 k f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 32 Ω, PO = 35 mW, C = 1 µF C = 2.2 µF 0.1 100 0.0001 0.001 0.01 0.1 1 THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W, fIN = 20 HZ C = 1 mF PO − Output Power − mW In Phase 180° Out of Phase Single Channel 0.001 0.01 0.1 100 0.001 0.01 0.1 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W , fIN = 20 Hz C = 2.2 mF TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 The charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage. The PVSS capacitor must be at least equal to the charge pump capacitor in order to allow maximum charge transfer. Low ESR capacitors are an ideal selection, and a value of 2.2 µ F is typical. Capacitor values that are smaller than 2.2 µ F can be used, but the maximum output power is reduced and the device may not operate to specifications. Figure through Figure compare the performance of the TPA4411 and TPA4411M with the recommended 2.2- µ F capacitors and µ F capacitors. TOTAL HARMONIC DISTORTION NOISE vs FREQUENCY Figure 65. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE vs vs OUTPUT POWER OUTPUT POWER Figure 66. Figure 67. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com 0.01 0.1 100 0.001 0.01 0.1 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W , fIN = 1 kHz C = 2.2 mF 0.01 0.1 100 0.0001 0.001 0.01 0.1 1 THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W, fIN = 1 kHZ C = 1 mF PO − Output Power − mW In Phase 180° Out of Phase Single Channel 0.01 0.1 100 0.001 0.01 0.1 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W , fIN = 10 kHz C = 2.2 mF 0.001 0.01 0.1 100 0.0001 0.001 0.01 0.1 1 THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 16 W, fIN = 10 kHZ C = 1 mF PO − Output Power − mW In Phase 180° Out of Phase Single Channel 0.1 100 0.0001 0.001 0.01 0.1 1 THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 32 W, fIN = 20 HZ C = 1 mF PO − Output Power − mW 180° Out of Phase Single Channel In Phase 0.001 0.01 0.1 100 0.001 0.01 0.1 In Phase 180° Out of Phase Single Channel PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, R L = 32 W , fIN = 20 Hz C = 2.2 mF TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE vs vs OUTPUT POWER OUTPUT POWER Figure 68. Figure 69. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE vs vs OUTPUT POWER OUTPUT POWER Figure 70. Figure 71. TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION NOISE NOISE vs vs OUTPUT POWER OUTPUT POWER Figure 72. Figure 73. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 10 100 1 k 10 k 100 k kSVR − Supply Voltage Rejection Ratio − V f − Frequency − Hz VDD = 3.6 V, R L = 32 Ω, C = 1 µF −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 10 100 1 k 10 k 100 k kSVR − Supply Voltage Rejection Ratio − V 1.8 V 3 V 4.5 V R L = 32 Ω C = 2.2 µF f − Frequency − Hz 3.6 V Decoupling Capacitors Supply Voltage Limiting At 4.5 V Layout Recommendations Exposed Pad On TPA4411RTJ and TPA4411MRTJ Package Option TPA4411RTJ and TPA441MRTJ PowerPAD Sizes SGND and PGND Connections TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 SUPPLY VOLTAGE SUPPLY VOLTAGE REJECTION RATIO REJECTION RATIO vs vs FREQUENCY FREQUENCY Figure 74. Figure 75. The TPA4411 and TPA4411M are DirectPath headphone amplifiers that require adequate power supply decoupling to ensure that the noise and total harmonic distortion (THD) are low. A good low equivalent-series-resistance (ESR) ceramic capacitor, typically 2.2 µ placed as close as possible to the device V DD lead works best. Placing this decoupling capacitor close to the TPA4411 or TPA4411M is important for the performance of the amplifier. For filtering lower frequency noise signals, a 10- µ F or greater capacitor placed near the audio power amplifier would also help, but it is not required in most device. The TPA4411 and TPA4411M have a built-in charge pump which serves to generate a negative rail for the headphone amplifier. Because the headphone amplifier operates from a positive voltage and negative voltage supply, circuitry has been implemented to protect the devices in the amplifier from an overvoltage condition. Once the supply is above 4.5 the TPA4411 and TPA4411M can shut down in an overvoltage protection mode to prevent damage to the device. The TPA4411 and TPA4411M resume normal operation once the supply is reduced to 4.5 V or lower. The exposed metal pad on the TPA4411RTJ and TPA4411MRTJ packages must be soldered down to a pad on the PCB in order to maintain reliability. The pad on the PCB should be allowed to float and not be connected to ground or power Connecting this pad to power or ground prevents the device from working properly because it is connected internally to PVSS. Both the TPA4411 and TPA4411M are available in a mm 4mm QFN. The exposed pad on the bottom of the package is sized differently between the two devices. The TPA4411RTJ PowerPAD is larger than the TPA4411MRTJ PowerPAD. Please see the layout and mechanical drawings at the end of the datasheet for proper sizing. The SGND and PGND pins of the TPA4411 and TPA4411M must be routed separately back to the decoupling capacitor in order to provide proper device operation. If the SGND and PGND pins are connected directly to each other, the part functions without risk of failure, but the noise and THD performance do not meet the specifications. Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

www.ti.com PGND Control SV DD PV DD C1P C1N 2.2 /C0109F SV SS PV SS 2.2 /C0109F OUTR OUTL1 /C0109F 1 /C0109F SDR INL INR SDL 2.2 /C0109F VCC TPA4411 SDR SDL Gain0 Gain1 PV DD AV DD TPA2012D2 TLV320AIC26 or TLV320AIC28 CODEC INL+ INL− INR+ INR− HPL or SPK1 HPR or SPK2 AGND PGND SGND 2.2 /C0109F 2.2 /C0109F 2.2 /C0109F 1.8 − 4.5 V Shutdown Control Right Audio Input Shutdown Control Left Audio Input +− + − 1 /C0109F 1 /C0109F Note: PowerPAD must be soldered down and plane must be floating. No Output DC-Blocking Capacitors TPA4411 TPA4411M SLOS430E AUGUST 2004 REVISED MARCH 2008 Figure 76. Application Circuit Figure 77. Typical Circuit Copyright 2004 2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) TPA4411MRTJR ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411MRTJRG4 ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411MRTJT ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411MRTJTG4 ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJR ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJRG4 ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJT ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJTG4 ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411YZHR ACTIVE DSBGA YZH 16 3000 Green (RoHS & no Sb/Br) Call TI Level-1-260C-UNLIM TPA4411YZHT ACTIVE DSBGA YZH 16 250 Green (RoHS & no Sb/Br) Call TI Level-1-260C-UNLIM (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 16-Apr-2009 Addendum-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 16-Mar-2009 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPA4411MRTJR QFN RTJ 20 3000 346.0 346.0 29.0 TPA4411MRTJT QFN RTJ 20 250 190.5 212.7 31.8 TPA4411RTJR QFN RTJ 20 3000 346.0 346.0 29.0 TPA4411RTJT QFN RTJ 20 250 190.5 212.7 31.8 TPA4411YZHR DSBGA YZH 16 3000 190.5 212.7 31.8 TPA4411YZHR DSBGA YZH 16 3000 220.0 220.0 34.0 TPA4411YZHT DSBGA YZH 16 250 220.0 220.0 34.0 TPA4411YZHT DSBGA YZH 16 250 190.5 212.7 31.8 PACKAGE MATERIALS INFORMATION www.ti.com 16-Mar-2009 Pack Materials-Page 2

D: Max = E: Max = 2196 µm, Min = 2196 µm, Min = 2136 µm 2136 µm

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