TPA2011D1 TI | Alldatasheet
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TP A2011D1TP A2011D1TP A2011D1TP A2011D1 EN IN+ GND VO- B1 B2 PVDD PGNDVDD IN- EN VO+ TPA2011D1 9-BALL 0.4mm□PITCH WAFER□CHIP SCALE□PACKAGE (YFF) (TOP VIEW□OF□PCB) 1.214 mm 1.160 mm TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009 3.2WMonoFilter-FreeClass-DAudioPowerAmplifier WithAuto-RecoveringShort-CircuitProtection Check forSamples: TPA2011D1 1FEATURES DESCRIPTION• PowerfulMono Class-DAmplifier – 3.24W (4Ω,5 V,10% THDN) The TPA2011D1 isa 3.2-W highefficiencyfilter-free class-Daudio power amplifier(class-Damp) in a– 2.57W (4Ω,5 V,1% THDN) 1,21mm × 1,16mm wafer chip scale package– 1.80W (8Ω,5 V,10% THDN) (WCSP) that requires only three external – 1.46W (8Ω,5 V,1% THDN) components.
- IntegratedFeedback Resistorof300 kΩ Featureslike95% efficiency,86-dB PSRR, 1.5 mA
- IntegratedImage RejectFilterforDAC Noise quiescentcurrentand improved RF immunitymake the TPA2011D1 class-D amp ideal for cellularReduction handsets.A faststart-uptimeof4 ms withno audible• Low Output Noise of20 μV turn-onpop makes the TPA2011D1 idealforPDA• Low QuiescentCurrentof1.5mA and smart-phone applications.The TPA2011D1
- Auto Recovering Short-CircuitProtection allowsindependentgainwhilesumming signalsfrom separatesources,and has a low20 μV noisefloor.• Thermal Overload Protection
- 9-Ball,1,21mm x 1,16mm 0,4mm PitchWCSP
APPLICATIONS
- Wirelessor CellularHandsets and PDAs
- PortableNavigationDevices
- GeneralPortableAudio Devices APPLICATION CIRCUIT Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsofTexas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2009,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SLOS626 –DECEMBER 2009 www.ti.com This integratedcircuitcan be damaged by ESD. Texas Instrumentsrecommends thatallintegratedcircuitsbe handled with appropriateprecautions.Failuretoobserveproperhandlingand installationprocedurescan cause damage. ESD damage can rangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmay be more susceptibletodamage because verysmallparametricchanges couldcause thedevicenottomeet itspublishedspecifications.
ORDERING INFORMATION
TA PACKAGED DEVICES (1) PART NUMBER (2) SYMBOL TPA2011D1YFFR OEW — 40°C to85°C 9-ballWSCP TPA2011D1YFFT OEW (1) Forthemost currentpackage and orderinginformation,see thePackage OptionAddendum attheend ofthisdocument,orsee theTI Web siteatwww.ti.com (2) The YFF package isonlyavailabletapedand reeled.The suffix"R "indicatesa reelof3000,thesuffix"T"indicatesa reelof250. ABSOLUTE MAXIMUM RATINGS overoperatingfree-airtemperaturerange,TA = 25°C (unlessotherwisenoted)(1) VALUE UNIT Inactivemode –0.3to6.0 V VDD ,PV DD Supplyvoltage Inshutdownmode –0.3to6.0 V VI Inputvoltage EN, IN+,IN– –0.3toVDD + 0.3 V R L Minimum loadresistance 3.2 Ω Outputcontinuoustotalpower dissipation See DissipationRatingTable TA Operatingfree-airtemperaturerange –40 to85 °C TJ Operatingjunctiontemperaturerange –40 to150 °C Tstg Storagetemperaturerange –65 to85 °C Lead temperature1,6mm (1/16inch)fromcase for10 seconds 260 °C (1) Stressesbeyond thoselistedunderabsolutemaximum ratingsmay cause permanentdamage tothedevice.These arestressratings only,and functionaloperationofthedeviceattheseorany otherconditionsbeyond thoseindicatedunderrecommended operating conditionsisnotimplied.Exposuretoabsolute–maximum –ratedconditionsforextendedperiodsmay affectdevicereliability. DISSIPATION RATINGS PACKAGE DERATING FACTOR (1) TA < 25°C TA = 70°C TA = 85°C YFF (WCSP) 4.2mW/ °C 525 mW 336 mW 273 mW (1) Deratingfactormeasure withhighK board. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT VDD Class-Dsupplyvoltage 2.5 5.5 V VIH High-levelinputvoltage EN 1.3 V VIL Low-levelinputvoltage EN 0.35 V R I Inputresistor Gain ≤ 20 V/V (26dB) 15 kΩ VIC Common mode inputvoltagerange VDD = 2.5V,5.5V,CMRR ≥ 49 dB 0.75 VDD -1.1 V TA Operatingfree-airtemperature –40 85 °C
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www.ti.com SLOS626 –DECEMBER 2009
ELECTRICAL CHARACTERISTICS
TA = 25°C (unlessotherwisenoted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Outputoffsetvoltage(measured|VOS | VI= 0 V,AV = 2 V/V,VDD = 2.5V to5.5V 1 5 mVdifferentially) |IIH| High-levelinputcurrent VDD = 5.5V,VEN = 5.5V 50 μA |IIL| Low-levelinputcurrent VDD = 5.5V,VEN = 0 V 1 μA VDD = 5.5V,no load 1.8 2.5 I(Q) Quiescentcurrent VDD = 3.6V,no load 1.5 2.3 mA VDD = 2.5V,no load 1.3 2.1 I(SD) Shutdown current VEN = 0.35V,VDD = 2.5V to5.5V 0.1 2 μA R O, SD Outputimpedance inshutdownmode VEN = 0.35V 2 kΩ f(SW) Switchingfrequency VDD = 2.5V to5.5V 250 300 350 kHz AV Gain VDD = 2.5V to5.5V,R IinkΩ 285/RI 300/RI 315/RI V/V R EN ResistancefromEN toGND 300 kΩ OPERATING CHARACTERISTICS VDD = 3.6V,TA = 25°C, AV = 2 V/V,R L = 8 Ω (unlessotherwisenoted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDD = 5 V 3.24 THD + N = 10%, f= 1 kHz,R L = 4 Ω VDD = 3.6V 1.62 W VDD = 2.5V 0.70 VDD = 5 V 2.57 THD + N = 1%, f= 1 kHz,R L = 4 Ω VDD = 3.6V 1.32 W VDD = 2.5V 0.57 PO Outputpower VDD = 5 V 1.80 THD + N = 10%, f= 1 kHz,R L = 8 Ω VDD = 3.6V 0.91 W VDD = 2.5V 0.42 VDD = 5 V 1.46 THD + N = 1%, f= 1 kHz,R L = 8 Ω VDD = 3.6V 0.74 W VDD = 2.5V 0.33 VDD = 3.6V,InputsAC grounded A-weighting 20 Vn Noiseoutputvoltage μVRMSwithC I= 2μF,f= 20 Hz to20 kHz No weighting 25 VDD = 5.0V,PO = 1.0W, f= 1 kHz,R L = 8 Ω 0.11% VDD = 3.6V,PO = 0.5W, f= 1 kHz,R L = 8 Ω 0.05% VDD = 3.6V,PO = 1.0W, f= 1 kHz,R L = 4 Ω 0.07% VDD = 2.5V,PO = 0.4W, f= 1 kHz,R L = 4 Ω 0.06% VDD = 3.6V,InputsAC groundedwithC I= 2 μF,PSRR AC power supplyrejectionratio 86 dB200 mV pp ripple,f= 217 Hz CMRR Common mode rejectionratio VDD = 3.6V,VIC = 1 VPP ,f= 217 Hz 79 dB TSU Startuptimefromshutdown VDD = 3.6V 4 ms VDD = 3.6V,VO+ shortedtoVDD 2 VDD = 3.6V,VO – shortedtoVDD 2 OvercurrentprotectionIOC VDD = 3.6V,VO+ shortedtoGND 2 Athreshold VDD = 3.6V,VO – shortedtoGND 2 VDD = 3.6V,VO+ shortedtoVO – 2 Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLink(s):TPA2011D1
300□KΩ EN TPA2011D1 SLOS626 –DECEMBER 2009 www.ti.com OPERATING CHARACTERISTICS (continued) VDD = 3.6V,TA = 25°C, AV = 2 V/V,R L = 8 Ω (unlessotherwisenoted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Time forwhichoutputis disabledaftera short-circuit TSD event,afterwhich VDD = 2.5V to5.5V 100 ms auto-recoverytrialsare continuouslymade TerminalFunctions TERMINAL I/O DESCRIPTION NAME WCSP BALL IN– C1 I Negativedifferentialaudioinput IN+ A1 I Positivedifferentialaudioinput VO- A3 O NegativeBTL audiooutput VO+ C3 O PositiveBTL audiooutput Analoggroundterminal.Must be connectedtosame potentialas PGND usinga directconnectionGND A2 I toa singlepointground. High-currentAnaloggroundterminal.Must be connectedtosame potentialas GND usinga directPGND B3 I connectiontoa singlepointground. Power supplyterminal.Must be connectedtosame power supplyas PV DD usinga directVDD B1 I connection.Voltagemust be withinvalueslistedinRecommended OperatingConditionstable. High-currentPower supplyterminal.Must be connectedtosame power supplyas VDD usinga PV DD B2 I directconnection.Voltagemust be withinvalueslistedinRecommended OperatingConditions table. EN C2 I Shutdown terminal.When terminalislowthedeviceisputintoShutdown mode. FUNCTIONAL BLOCK DIAGRAM
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Low□Pass Filter Load Measurement Input OUT+ OUT- VDD GND VDD CS1 CS2 CI RI RI PO − Output Power − W η − Efficiency − % 100 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V R L = 8 Ω + 33 µH Gain = 6 dB PO − Output Power − W η − Efficiency − % 100 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V R L = 4 Ω + 33 µH Gain = 6 dB PO − Output Power − W PD − Power Dissipation − W 0.0 0.1 0.2 0.3 0.4 R L = 8 Ω + 33 µH R L = 4 Ω + 33 µH VDD = 3.6 V Gain = 6 dB PO − Output Power − W PD − Power Dissipation − W 0.0 0.1 0.2 0.3 0.4 0.5 0.6 R L = 8 Ω + 33 µH R L = 4 Ω + 33 µH VDD = 5.0 V Gain = 6 dB TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009 TEST SETUP FOR GRAPHS 1. InputresistorR I = 150kΩ givesa gainof6 dB whichisused forallthegraphs 2. C I was shortedforany common-mode inputvoltagemeasurement.Allothermeasurements were takenwithC I = 0.1-μF (unlessotherwisenoted). 3. C S1 = 0.1μF isplacedveryclosetothedevice.The optionalC S2 = 10μF isused fordatasheetgraphs. 4. The 30-kHz low-passfilterisrequiredeven iftheanalyzerhas an internallow-passfilter.An RC low-passfilter(1kΩ, 4700pF)isused on each outputforthedatasheetgraphs. TYPICAL CHARACTERISTICS VDD = 3.6V,C I = 0.1μF,C S1 = 0.1μF,C S2 = 10 μF,TA = 25°C, R L = 8 Ω (unlessotherwisenoted) EFFICIENCY vs EFFICIENCY vs OUTPUT POWER OUTPUT POWER Figure1. Figure2. POWER DISSIPATION vs POWER DISSIPATION vs OUTPUT POWER OUTPUT POWER Figure3. Figure4. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLink(s):TPA2011D1
PO − Output Power − W IDD − Supply Current − A 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V R L = 4 Ω + 33 µH Gain = 6 dB PO − Output Power − W IDD − Supply Current − A 0.0 0.1 0.2 0.3 0.4 0.5 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V R L = 8 Ω + 33 µH Gain = 6 dB VDD − Supply Voltage − V IDD − Supply Current − mA 1.00 1.25 1.50 1.75 2.00 R L = No Load R L = 8 Ω + 33 µH R L = 4 Ω + 33 µH Gain = 6 dB VEN − EN Voltage − V IDD − Supply Current − nA 100 150 200 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V Gain = 6 dB R L − Load Resistance − Ω PO − Output Power − W 4 8 12 16 20 24 28 32 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V THD+N = 10 % Frequency = 1 kHz Gain = 6 dB R L − Load Resistance − Ω PO − Output Power − W 4 8 12 16 20 24 28 32 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V THD+N = 1 % Frequency = 1 kHz Gain = 6 dB TPA2011D1 SLOS626 –DECEMBER 2009 www.ti.com TYPICAL CHARACTERISTICS (continued) VDD = 3.6V,C I = 0.1μF,C S1 = 0.1μF,C S2 = 10 μF,TA = 25°C, R L = 8 Ω (unlessotherwisenoted) SUPPLY CURRENT vs SUPPLY CURRENT vs OUTPUT POWER OUTPUT POWER Figure5. Figure6. SUPPLY CURRENT vs SUPPLY CURRENT vs SUPPLY VOLTAGE EN VOLTAGE Figure7. Figure8. OUTPUT POWER vs OUTPUT POWER vs LOAD RESISTANCE LOAD RESISTANCE Figure9. Figure10.
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VDD − Supply Voltage − V PO − Output Power − W R L = 4 Ω , THD+N = 1 % R L = 4 Ω , THD+N = 10 % R L = 8 Ω , THD+N = 1 % R L = 8 Ω , THD+N = 10 % Frequency = 1 kHz Gain = 6 dB f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 20 100 1k 10k 20k 0.001 0.01 0.1 PO = 50 mW PO = 250 mW PO = 1 W VDD = 5.0 V R L = 8 Ω + 33 µH Gain = 6 dB f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 20 100 1k 10k 20k 0.001 0.01 0.1 PO = 25 mW PO = 125 mW PO = 500 mW VDD = 3.6 V R L = 8 Ω + 33 µH Gain = 6 dB f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 20 100 1k 10k 20k 0.001 0.01 0.1 PO = 15 mW PO = 75 mW PO = 200 mW VDD = 2.5 V R L = 8 Ω + 33 µH Gain = 6 dB TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009 TYPICAL CHARACTERISTICS (continued) VDD = 3.6V,C I = 0.1μF,C S1 = 0.1μF,C S2 = 10 μF,TA = 25°C, R L = 8 Ω (unlessotherwisenoted) OUTPUT POWER vs THD + NOISE vs SUPPLY VOLTAGE OUTPUT POWER Figure11. Figure12. THD + NOISE vs THD + NOISE vs OUTPUT POWER FREQUENCY Figure13. Figure14. THD + NOISE vs THD + NOISE vs FREQUENCY FREQUENCY Figure15. Figure16. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLink(s):TPA2011D1
f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 20 100 1k 10k 20k 0.001 0.01 0.1 PO = 100 mW PO = 500 mW PO = 2 W VDD = 5.0 V R L = 4 Ω + 33 µH Gain = 6 dB f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 20 100 1k 10k 20k 0.001 0.01 0.1 PO = 50 mW PO = 250 mW PO = 1 W VDD = 3.6 V R L = 4 Ω + 33 µH Gain = 6 dB f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % 20 100 1k 10k 20k 0.001 0.01 0.1 PO = 30 mW PO = 150 mW PO = 400 mW VDD = 2.5 V R L = 4 Ω + 33 µH Gain = 6 dB VIC − Common Mode Input Voltage − V THD+N − Total Harmonic Distortion + Noise − % 0.01 0.1 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V R L = 8 Ω + 33 µH Frequency = 1 kHz PO = 200 mW Gain = 6 dB f − Frequency − Hz PSRR − Power Supply Rejection Ratio − dB 20 100 1k 10k 20k −120 −110 −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V Inputs AC−Grounded C I = 2 µF R L = 8 Ω + 33 µH Gain = 6 dB f − Frequency − Hz PSRR − Power Supply Rejection Ratio − dB 20 100 1k 10k 20k −120 −110 −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V Inputs AC−Grounded C I = 2 µF R L = 4 Ω + 33 µH Gain = 6 dB TPA2011D1 SLOS626 –DECEMBER 2009 www.ti.com TYPICAL CHARACTERISTICS (continued) VDD = 3.6V,C I = 0.1μF,C S1 = 0.1μF,C S2 = 10 μF,TA = 25°C, R L = 8 Ω (unlessotherwisenoted) THD + NOISE vs THD + NOISE vs FREQUENCY FREQUENCY Figure17. Figure18. THD + NOISE vs THD + NOISE vs FREQUENCY COMMON MODE INPUT VOLTAGE Figure19. Figure20. POWER SUPPLY REJECTION RATIO POWER SUPPLY REJECTION RATIO vs FREQUENCY vs FREQUENCY Figure21. Figure22.
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VIC − Common Mode Input Voltage − V PSRR − Power Supply Rejection Ratio − dB −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V R L = 8 Ω + 33 µH Frequency = 217 Hz Gain = 6 dB f − Frequency − Hz CMRR − Common Mode Rejection Ratio − dB 20 100 1k 10k 20k −100 −90 −80 −70 −60 −50 −40 −30 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V VIC = 1 VPP R L = 8 Ω + 33 µH Gain = 6 dB VIC − Common Mode Input Voltage − V CMRR − Common Mode Rejection Ratio − dB −80 −70 −60 −50 −40 −30 −20 −10 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V R L = 8 Ω + 33 µH Frequency = 217 Hz Gain = 6 dB TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009 TYPICAL CHARACTERISTICS (continued) VDD = 3.6V,C I = 0.1μF,C S1 = 0.1μF,C S2 = 10 μF,TA = 25°C, R L = 8 Ω (unlessotherwisenoted) POWER SUPPLY REJECTION RATIO vs COMMON MODE REJECTION RATIO COMMON MODE INPUT VOLTAGE vs FREQUENCY Figure23. Figure24. COMMON MODE REJECTION RATIO vs COMMON MODE INPUT VOLTAGE Figure25. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLink(s):TPA2011D1
SLOS626 –DECEMBER 2009 www.ti.com TYPICAL CHARACTERISTICS (continued) VDD = 3.6V,C I = 0.1μF,C S1 = 0.1μF,C S2 = 10 μF,TA = 25°C, R L = 8 Ω (unlessotherwisenoted) GSM POWER SUPPLY REJECTION vs TIME Figure26. GSM POWER SUPPLY REJECTION vs FREQUENCY Figure27.
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Gain /C00432 x 150 k/C0087 R I /C0466V V /C0467 TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009
APPLICATION INFORMATION
SHORT CIRCUIT AUTO-RECOVERY When a short-circuitevent occurs,the TPA2011D1 goes to shutdown mode and activatesthe integrated auto-recoveryprocesswhose aim istoreturnthedevicetonormaloperationonce theshort-circuitisremoved. Thisprocessrepeatedlyexamines (onceevery100ms) whethertheshort-circuitconditionpersists,and returns thedevicetonormaloperationimmediatelyaftertheshort-circuitconditionisremoved.Thisfeaturehelpsprotect thedevicefromlargecurrentsand maintaina good long-termreliability. INTEGRATED IMAGE REJECT FILTER FOR DAC NOISE REJECTION In applicationswhich use a DAC to driveClass-Damplifiers,out-of-bandnoiseenergy presentat the DAC's image frequenciesfoldback intotheaudio-bandattheoutputoftheClass-Damplifier.An externallow-passfilter isoftenplacedbetween theDAC and theClass-Damplifierinordertoattenuatethisnoise. The TPA2011D1 has an integratedImage RejectFilterwitha low-passcutofffrequencyof 130 kHz, which significantlyattenuatesthisnoise.Depending on the system noisespecification,the integratedImage Reject Filtermay helpeliminateexternalfiltering,therebysavingboardspace and component cost. COMPONENT SELECTION Figure28 shows theTPA2011D1 typicalschematicwithdifferentialinputsand Figure29 shows theTPA2011D1 withdifferentialinputsand inputcapacitors,and Figure30 shows the TPA2011D1 withsingle-endedinputs. Differentialinputsshould be used whenever possiblebecause the single-endedinputsare much more susceptibletonoise. Table1.TypicalComponent Values REF DES VALUE EIA SIZE MANUFACTURER PART NUMBER R I 150 kΩ (±0.5%) 0402 Panasonic ERJ2RHD154V C S 1 μF (+22%, –80%) 0402 Murata GRP155F50J105Z C I (1) 3.3nF (±10%) 0201 Murata GRP033B10J332K (1) C Iisonlyneeded forsingle-endedinputorifVICM isnotbetween 0.5V and VDD – 0.8V.C I= 3.3nF (withR I= 150 kΩ)givesa high-passcornerfrequencyof321 Hz. InputResistors(RI) The inputresistors(RI)setthegainoftheamplifieraccordingtoEquation1. (1) Resistormatchingisveryimportantinfullydifferentialamplifiers.The balanceof the outputon the reference voltagedepends on matched ratiosof the resistors.CMRR, PSRR, and cancellationof the second harmonic distortiondiminishifresistormismatch occurs.Therefore,itisrecommended to use 1% toleranceresistorsor bettertokeep theperformanceoptimized.Matchingismore importantthanoveralltolerance.Resistorarrayswith 1% matchingcan be used witha tolerancegreaterthan1%. PlacetheinputresistorsveryclosetotheTPA2011D1 tolimitnoiseinjectionon thehigh-impedancenodes. For optimalperformancethegainshouldbe setto2 V/V orlower.Lower gainallowstheTPA2011D1 tooperate atitsbest,and keeps a highvoltageattheinputmaking theinputslesssusceptibletonoise. Decoupling Capacitors(CS1,C S2) The TPA2011D1 isa high-performanceclass-Daudioamplifierthatrequiresadequatepower supplydecoupling to ensure the efficiencyishigh and totalharmonic distortion(THD) islow.For higherfrequencytransients, spikes,ordigitalhash on theline,a good lowequivalent-series-resistance(ESR) ceramiccapacitorC S1 = 0.1μF , placedas closeas possibletothedeviceVDD leadworks best.PlacingC S1 closetotheTPA2011D1 isimportant fortheefficiencyoftheclass-Damplifier,because any resistanceorinductanceinthetracebetween thedevice Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLink(s):TPA2011D1
/C04662/C0112R IC I/C0467 C I/C0043 1 /C04662/C0112R Ifc/C0467 IN− IN+ PWM H− Bridge VO+ VO− Internal Oscillator CS To□Battery VDD GNDBias Circuitry Differential Input TPA2011D1 Filter-Free□Class□D EN RI RI− TPA2011D1 SLOS626 –DECEMBER 2009 www.ti.com and thecapacitorcan cause a lossinefficiency.For filteringlower-frequencynoisesignals,a 10 μF or greater capacitor(CS2)placedneartheaudiopower amplifierwould alsohelp,butitisnotrequiredinmost applications because of the high PSRR of thisdevice.Typically,the smallerthe capacitor'scase size,the lower the inductanceand the closeritcan be placed to the TPA2011D1. X5R and X7R dielectriccapacitorsare recommended forbothC S1 and C S2. InputCapacitors(CI) The TPA2011D1 does notrequireinputcouplingcapacitorsifthedesignuses a differentialsourcethatisbiased from 0.5 V to VDD –0.8 V (shown in Figure28).Ifthe inputsignalisnot biasedwithinthe recommended common-mode inputrange,ifneedingtouse theinputas a highpass filter(shown inFigure29),or ifusinga single-endedsource(shown inFigure30),inputcouplingcapacitorsarerequired. The inputcapacitorsand inputresistorsform a high-passfilterwiththe cornerfrequency,fc, determinedin Equation2. (2) The value of the inputcapacitoris importantto consideras itdirectlyaffectsthe bass (low frequency) performanceofthecircuit.Speakers inwirelessphones cannotusuallyrespondwelltolow frequencies,so the cornerfrequencycan be settoblocklowfrequenciesinthisapplication. Equation3 isreconfiguredtosolvefortheinputcouplingcapacitance. (3) Ifthe cornerfrequencyiswithinthe audio band, the capacitorsshouldhave a toleranceof ±10% or better, because any mismatchincapacitancecausesan impedance mismatchatthecornerfrequencyand below. For a flatlow-frequencyresponse,use largeinputcouplingcapacitors(1 μF).However, ina GSM phone the groundsignalisfluctuatingat217 Hz, butthesignalfromthecodec does nothave thesame 217 Hz fluctuation. The differencebetween thetwo signalsisamplified,senttothespeaker,and heardas a 217 Hz hum. Figure28. TypicalTPA2011D1 ApplicationSchematic With DifferentialInputfora WirelessPhone
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IN− IN+ PWM H− Bridge VO −VO Internal Oscillator CS To□Battery VDD GND Bias Circuitry Differential Input TPA2011D1 Filter-Free□Class□D EN CI CI RICI RI IN− IN+ PWM H− Bridge VO+ VO− Internal Oscillator CS To□Battery VDD GND Bias Circuitry Single-ended Input TPA2011D1 Filter-Free□Class□D EN CI CI RI RI Gain 1/C0043 V O V I1 /C00432 x 150 k/C0087 R I1 /C0466V V /C0467 Gain 2/C0043 V O V I2 /C00432 x 150 k/C0087 R I2 /C0466V V /C0467 TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009 Figure29. TPA2011D1 ApplicationSchematic With DifferentialInputand InputCapacitors Figure30. TPA2011D1 ApplicationSchematic With Single-EndedInput SUMMING INPUT SIGNALS WITH THE TPA2011D1 Most wirelessphones orPDAs need tosum signalsattheaudiopower amplifierorjusthave two signalsources thatneed separategain.The TPA2011D1 makes iteasy to sum signalsor use separatesignalsourceswith differentgains.Many phones now use thesame speakerfortheearpieceand ringer,where thewirelessphone would requirea much lowergainforthephone earpiecethanfortheringer.PDAs and phones thathave stereo headphones requiresumming oftherightand leftchannelstooutputthestereosignaltothemono speaker. Summing Two DifferentialInputSignals Two extraresistorsareneeded forsumming differentialsignals(atotalof5 components).The gainforeach input sourcecan be setindependently(seeEquation4 and Equation5,and Figure31). (4) (5) Ifsumming leftand rightinputswitha gainof1 V/V,use R I1= R I2= 300 kΩ. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLink(s):TPA2011D1
/C00432 x 150 k/C0087 R I1 /C0466V V /C0467 Gain 2/C0043 V O V I2 /C00432 x 150 k/C0087 R I2 /C0466V V /C0467 C I2/C0043 1 /C04662/C0112R I2fc2/C0467 TPA2011D1 SLOS626 –DECEMBER 2009 www.ti.com Ifsumming a ringtoneand a phone signal,setthering-tonegaintoGain 2 = 2 V/V,and thephone gaintogain1 R I1 = 3 M Ω,and = R I2 = 150 kΩ. Figure31. ApplicationSchematic With TPA2011D1 Summing Two DifferentialInputs Summing a DifferentialInputSignaland a Single-EndedInputSignal Figure32 shows how tosum a differentialinputsignaland a single-endedinputsignal.Ground noisecan couple inthroughIN+ withthismethod.Itisbettertouse differentialinputs.The cornerfrequencyofthesingle-ended inputissetby C I2,shown inEquation8.To assurethateach inputisbalanced,thesingle-endedinputmust be drivenby a low-impedancesourceeven iftheinputisnotinuse (6) (7) (8) Ifsumming a ringtoneand a phone signal,thephone signalshoulduse a differentialinputsignalwhilethering tonemightbe limitedtoa single-endedsignal.Phone gainissetatgain1 = 0.1V/V,and thering-tonegainisset togain2 = 2 V/V,theresistorvalueswouldbe… R I1 = 3 M Ω,and = R I2 = 150 kΩ. The highpass cornerfrequencyofthesingle-endedinputissetby C I2.Ifthedesiredcornerfrequencyisless than20 Hz...
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/C04662/C0112150k/C008720Hz /C0467 C I2/C011753 nF IN- IN+ PWM H- Bridge VO+ VO- Internal Oscillator C S To Battery VDD GNDBias Circuitry R I2 R I2 Differential Input 1 Filter-Free Class D SHUTDOWN R I1 R I1 Single-Ended Input 2 C I2 C I2 Gain 1/C0043 V O V I1 /C00432 x 150 k/C0087 R I1 /C0466V V /C0467 Gain 2/C0043 V O V I2 /C00432 x 150 k/C0087 R I2 /C0466V V /C0467 C I1/C0043 1 /C04662/C0112R I1fc1/C0467 C I2/C0043 1 /C04662/C0112R I2fc2/C0467 C P /C0043C I1 /C0041C I2 R P /C0043 R I1 /C0032R I2 /C0466R I1 /C0041R I2/C0467 TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009 (9) (10) Figure32. ApplicationSchematic With TPA2011D1 Summing DifferentialInputand Single-EndedInput Signals Summing Two Single-EndedInputSignals Four resistorsand threecapacitorsare needed forsumming single-endedinputsignals.The gainand corner frequencies(fc1 and fc2) foreach inputsourcecan be setindependently(seeEquation11 throughEquation14, and Figure33).Resistor,R P,and capacitor,C P,areneeded on theIN+ terminaltomatch theimpedance on the IN– terminal.The single-endedinputsmust be drivenby low impedance sourceseven ifone oftheinputsisnot outputtingan ac signal. (11) (12) (13) (14) (15) (16) Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLink(s):TPA2011D1
VO− VO + Ferrite Chip Bead 1 nF TPA2011D1 SLOS626 –DECEMBER 2009 www.ti.com Figure33. ApplicationSchematic With TPA2011D1 Summing Two Single-EndedInputs WHEN TO USE AN OUTPUT FILTER Design theTPA2011D1 withoutan Inductor/Capacitor(LC)outputfilterifthetracesfrom theamplifiertothe speaker are short.Wirelesshandsetsand PDAs are greatapplicationsforthisclass-Damplifierto be used withoutan outputfilter. The TPA2011D1 does notrequirean LC outputfilterforshortspeakerconnections(approximately100 mm long or less).A ferritebead can oftenbe used inthedesigniffailingradiatedemissionstestingwithoutan LC filter; and, the frequency-sensitivecircuitisgreaterthan 1 MHz. Ifchoosinga ferritebead, choose one withhigh impedance athighfrequencies,butverylow impedance atlow frequencies.The selectionmust alsotakeinto accountthe currentsflowingthroughthe ferritebead. Ferritescan beginto looseeffectivenessat much lower thanratedcurrentvalues.See theTPA2011D1 EVM User'sGuide forcomponents used successfullyby TI. Figure34 shows a typicalferrite-beadoutputfilter. Figure34. TypicalFerriteChip Bead Filter EFFICIENCY AND THERMAL INFORMATION The maximum ambientoperatingtemperatureoftheTPA2011D1 depends on theloadresistance,power supply voltageand heat-sinkingabilityof the PCB system.The deratingfactorforthe YFF package isshown inthe dissipationratingtable.ConvertingthistoθJA:
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/C0113JA /C00431 Derating Factor TAMax /C0043TJMax /C0042/C0113JAP Dmax TPA2011D1 www.ti.com SLOS626 –DECEMBER 2009 (17) Given θJA (fromthePackage Dissipationratingstable),themaximum allowablejunctiontemperature(fromthe AbsoluteMaximum ratingstable),and the maximum internaldissipation(fromPower Dissipationvs Output Power figures)themaximum ambienttemperaturecan be calculatedwiththefollowingequation.Note thatthe unitson thesefiguresare Watts RMS. Because ofcrestfactor(ratioofpeak power toRMS power)from 9–15 dB,thermallimitationsarenotusuallyencountered. (18) The TPA2011D1 isdesignedwiththermalprotectionthatturnsthe deviceoffwhen the junctiontemperature surpasses150°C topreventdamage totheIC.Note thattheuse ofspeakerslessresistivethan4-Ω (typ)isnot advisable.Below 4-Ω (typ)the thermalperformanceof the devicedramaticallyreducesbecause of increased outputcurrentand reducedamplifierefficiency.The AbsoluteMaximum ratingof3.2-Ω coversthemanufacturing toleranceofa 4-Ω speakerand speakerimpedance decreasedue tofrequency.θJA isa grossapproximationof thecomplex thermaltransfermechanisms between thedeviceand itsambientenvironment.IftheθJA calculation revealsa potentialproblem,a more accurateestimateshouldbe made. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLink(s):TPA2011D1
SLOS626 –DECEMBER 2009 www.ti.com PRINTED CIRCUIT BOARD LAYOUT In making the pad sizeforthe WCSP balls,itisrecommended thatthe layoutuse nonsoldermask defined (NSMD) land.With thismethod, the soldermask openingismade largerthan the desiredlandarea,and the openingsizeisdefinedby thecopperpad width.Figure35 shows theappropriatediametersfora WCSP layout. Figure35. Land PatternImage and Dimensions SOLDER PAD SOLDER MASK COPPER STENCILCOPPER PAD STENCIL OPENING (6)(7) DEFINITIONS OPENING (5) THICKNESS THICKNESS 1. Circuittracesfrom NSMD definedPWB landsshouldbe 75 μm to100 μm wide intheexposed area inside thesoldermask opening.Widertracewidthsreducedevicestandoffand impactreliability. 2. Best reliabilityresultsare achievedwhen the PWB laminateglasstransitiontemperatureis above the operatingtherangeoftheintendedapplication. 3. Recommend solderpasteisType 3 orType 4. 4. For a PWB usinga Ni/Ausurfacefinish,thegoldthicknessshouldbe less0.5mm toavoida reductionin thermalfatigueperformance. 5. Soldermask thicknessshouldbe lessthan20 μm on topofthecoppercircuitpattern 6. Bestsolderstencilperformanceisachievedusinglasercutstencilswithelectropolishing.Use ofchemically etchedstencilsgiveinferiorsolderpastevolume control. 7. Trace routingaway from WCSP deviceshouldbe balancedin X and Y directionsto avoidunintentional component movement due tosolderwettingforces. Figure36. Layout Snapshot An on-padviaisnotrequiredtoroutethemiddleballB2 (PVDD )oftheTPA2011D1. JustshortballB2 (PVDD )to ballB1 (VDD ) and connectboth to the supplytraceas shown inFigure36. Thissimplifiesboard routingand savesmanufacturingcost.
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www.ti.com SLOS626 –DECEMBER 2009 Package Dimensions D E Max = 1244µm Max = 1190µm Min = 1184µm Min = 1130µm Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLink(s):TPA2011D1
Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) TPA2011D1YFFR ACTIVE DSBGA YFF 9 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM TPA2011D1YFFT ACTIVE DSBGA YFF 9 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 21-Dec-2009 Addendum-Page 1
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