TPA62 LUGUANG | Alldatasheet

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V I I PP I H I RM I BO V RM V BR V BO I R T amb =50 1.7 W s s 100 A tp=20m s 30 A tp=20m s 9 A s V RM 5K V / s -55to+150 150 230 Symbol Value Unlt R th (j-l) 60 R th (j-a) 100 I H C min. note2 max. note3 mA P F 2 62 1.0 800 150 150 2 68 1.0 800 150 150 2 100 1.0 800 150 100 2 120 1.0 800 150 100 2 130 1.0 800 150 100 2 180 1.0 800 150 100 2 200 1.0 800 150 100 2 220 1.0 800 150 100 2 240 1.0 800 150 100 2 270 1.0 800 150 100 Symbol V RM I RM V R V BR V BO I H I BO I PP C N ote : M easure d at 5 z cyc l e S ee test c i rcu i t N ote2: S ee test c i rcu i t N ote3: V R F 1MH R e f er to fi f or C versus V R Breakover voltage Holding current Breakov er current Peak pulse current Continuous reverse voltage Breakdown voltage Capacitance Parameter Stand-off voltage 133 ELECTRICAL CHARACTERISTICS (T A =25 Leakage current at stand-off voltage 243 160 173 240 267 293 320 360TPA270 108 117 162 180 198 216 TPA180 TPA200 TPA220 TPA240 TPA68 TPA100 TPA120 TPA130 TPA62 Type I RM @ V RM max. A V V BO @ I BO max. note1 V mA Parameter Junction to leads (L lead =10mm) Junction to ambient on printed circuit (L lead =10mm) V BR @ I R min. V mA Storage temperature range Maximum junction temperature Maximum leadtemperature for soldering during 10sat 5mmform case Power dissipation on infinite heatsink Peak pulse current Non repetitive surge peak on-state current I t vallue for fusing Critical rate of rise of off-state voltage I FSM I t dV/dt T stg T j THERMAL RESISTANCES Symbol UnitValue ABSOLUTE MAXIMUM RATINGS (T A =25 P Ipp Parameter T L TPA Series Telecommunication Protection http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1

relay. Transformer 220V/800V k I BO measure 220V 140 240 D.U.T V BO measure tp=20ms Vp D.U.T. R Surge generator V BAT =-48V This is a GO-NOGOTest w hich allow s to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T w ith a surge current : Ipp = 10A , 10/1000 ms. 3) The D.U.T w ill come back off-state w ithin 50ms max. TEST CIRCUIT 1 FOR IBO AND VBO PARAMETERS: TEST CIRCUIT 2 FOR IH PARAMETER: TEST PROCEDURE : Pulse Test duration (tp = 20m s): - For Bidirectional devices = Sw itchK is closed - For Unidirectional devices = Sw itch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO

200 Volt

  • VOUT = 480 VRMS, R2 = 240Ω. Ratings AND Charactieristic Curves TPA Series Telecommunication Protection http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1

FIG.2 -- RElATIVE VARIATION OF GOlDING DDDD D CURRENT VERSUS JUNCTION SSSS C TEMPERATURE. FFFFFIG.3 -- RElATIVE VARIATION OF JUNCTION VVVVVVVV CAPACITANCE VERSUS REVERSE BBBBBBBB APPLIED VOlTAGE FIG.4 -- ON-STATE CURRENT VERSUS ON-STATE YY YYY VOlTAGE FIG.5 -- TRANSIENT THERMAl IMPEDANCE JUNCTION TO AMBIENT VERSUS PUlSE DURATION FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE VVVVVV CURRENT VERSUS OVERlOAD DURATION VV (TJ INItIAl=25°C). 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 F=50H Z t(s) I TSM(A) 0.8 0.6 0.2 0.4 0.0-40 -20 2006 040 80 100 1.0 1.2 1.4 2.0 1.6 1.8 T J (°C) IH[T J ]/IH[T J =25 1.0 0.5 0.1 1 10010 V R (V) 0.2 300 F=1MH Z C[V R ]/C[V R =1V] 01 32 84 5 6 7 T J =25 C 9 1 0 V T (V) IT(A) 1E+1 1E-1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+0 1E+2 tp(s) 5E+2 ZTH(J-a)( Ratings AND Charactieristic Curves TPA Series Telecommunication Protection http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1 PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG DO-15 3000/AMMO 30000 42X28X31 12.00 10.00